Layer-by-layer disentanglement of Bloch states

Lee, Woojoo; Fernandez-Mulligan, Sebastian; Tan, Hengxin; Yan, C. T.; Guan, Yingdong; Lee, Seng Huat; Mei, Ruobing; Liu, Chao-Xing; Yan, Binghai; Mao, Zhiqiang; Yang, Shuolong

doi:10.1038/s41567-023-02008-4

Cited by 9 publications

(3 citation statements)

References 40 publications

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“…Interestingly, the presence of the sharp TSSs in the 6 eV data indicates at least a partial wave function relocation of the TSS from the top QL to the second QL. This microscopic understanding is consistent with a time-resolved ARPES study on MnBi 4 Te 7 which unveiled a partial TSS wave function relocation due to the presence of surface defects, but the effect is more drastic in the present case as a result of the heavy chemical processing. Moreover, we expect the TSS from the bottom QL to also undergo wave function relocation into the QL above it.…”

supporting

confidence: 89%

Preservation of Topological Surface States in Millimeter-Scale Transferred Membranes

Ip,

Gao,

Nguyen

et al. 2024

Nano Lett.

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Ultrathin topological insulator membranes are building blocks of exotic quantum matter. However, traditional epitaxy of these materials does not facilitate stacking in arbitrary orders, while mechanical exfoliation from bulk crystals is also challenging due to the nonnegligible interlayer coupling therein. Here we liberate millimeter-scale films of the topological insulator Bi 2 Se 3 , grown by molecular beam epitaxy, down to 3 quintuple layers. We characterize the preservation of the topological surface states and quantum well states in transferred Bi 2 Se 3 films using angle-resolved photoemission spectroscopy. Leveraging the photon-energy-dependent surface sensitivity, the photoemission spectra taken with 6 and 21.2 eV photons reveal a transfer-induced migration of the topological surface states from the top to the inner layers. By establishing clear electronic structures of the transferred films and unveiling the wave function relocation of the topological surface states, our work lays the physics foundation crucial for the future fabrication of artificially stacked topological materials with single-layer precision.

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supporting

confidence: 89%

Preservation of Topological Surface States in Millimeter-Scale Transferred Membranes

Ip,

Gao,

Nguyen

et al. 2024

Nano Lett.

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“…Furthermore, the burgeoning field of van der Waals (vdW) integrated heterostructures has garnered significant attention, finding diverse applications in emerging fields such as optoelectronics, [25] nanoelectronics, [26] and quantum information. [27] Notably, researchers have recently uncovered highly anisotropic vdW thermal conductors within these heterostructures. [28] These compelling advancements have heightened our interest, prompting an exploration of the intriguing question of whether weak van der Waals forces themselves can instigate resonance and, consequently, serve as a novel avenue for modulating phonon transport in previously uncharted ways.…”

Section: Introductionmentioning

confidence: 99%

Phonon resonance modulation in weak van der Waals heterostructures: Controlling thermal transport in graphene–silicon nanoparticle systems

Li 李,

Liu 刘,

Hu 胡

2024

Chinese Phys. B

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The drive for efficient thermal management has intensified with the miniaturization of electronic devices. This study explores the modulation of phonon transport within graphene by introducing silicon nanoparticles influenced by van der Waals forces. Our approach involves the application of non-equilibrium molecular dynamics to assess thermal conductivity while varying the interaction strength, leading to a noteworthy reduction in thermal conductivity. Furthermore, we observe a distinct attenuation in length-dependent behavior within the graphene-nanoparticles system. Our exploration combines wave packet simulations with phonon transmission calculations, aligning with a comprehensive analysis of the phonon transport regime to unveil the underlying physical mechanisms at play. Lastly, we conduct transient molecular dynamics simulations to investigate interfacial thermal conductance between the nanoparticles and the graphene, revealing an enhanced TBC. This research not only contributes to our understanding of phonon transport but also opens a new degree of freedom for utilizing van der Waals nanoparticle-induced resonance, offering promising avenues for the modulation of thermal properties in advanced materials and enhancing their performance in various technological applications.

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“…The layer-locked Berry curvature endows the surface electrons in the AI with a topological nontrivial degree of freedom. Hopefully, one can construct devices using such a layer degree of freedom [ 34 , 35 ], and the encoded information can be easily read out through layer-resolved transport measurements [ 33 , 36 ]. However, current experimental and theoretical advances are unable to utilize topologically protected excitations to manipulate the layer degree of freedom in AFM \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{upgreek} \usepackage{mathrsfs} \setlength{\oddsidemargin}{-69pt} \begin{document} $\rm {MnBi_2Te_4}$\end{document} dissipationlessly [ 33 , 36–39 ].…”

Section: Introductionmentioning

confidence: 99%

Dissipationless layertronics in axion insulator MnBi2Te4

Li,

Gong,

Cheng

et al. 2023

National Science Review

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Surface electrons in axion insulators are endowed with a topological layer degree of freedom followed by exotic transport phenomena, e.g., the layer Hall effect [Gao et al., Nature 595, 521 (2021)]. Here, we propose that such a layer degree of freedom can be manipulated in a dissipationless way based on the antiferromagnetic MnBi2Te4 with tailored domain structure. This makes MnBi2Te4 a versatile platform to exploit the “layertronics” to encode, process, and store information. Importantly, the layer filter, layer valve, and layer reverser devices can be achieved using the layer-locked chiral domain wall modes. The dissipationless nature of the domain wall modes makes the performance of the layertronic-devices superior to those in spintronics and valleytronics. Specifically, the layer reverser, a layer version of Datta-Das transistor, also fills up the blank in designing the valley reverser in valleytronics. Our work sheds light on constructing new generation electronic devices with high performance and low energy consumption in the framework of layertronics.

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Layer-by-layer disentanglement of Bloch states

Cited by 9 publications

References 40 publications

Preservation of Topological Surface States in Millimeter-Scale Transferred Membranes

Preservation of Topological Surface States in Millimeter-Scale Transferred Membranes

Phonon resonance modulation in weak van der Waals heterostructures: Controlling thermal transport in graphene–silicon nanoparticle systems

Dissipationless layertronics in axion insulator MnBi2Te4

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