2015
DOI: 10.1103/physrevb.91.041407
|View full text |Cite
|
Sign up to set email alerts
|

Layer-dependent electronic structure of an atomically heavy two-dimensional dichalcogenide

Abstract: We report angle-resolved photoemission spectroscopic measurements of the evolution of the thickness-dependent electronic band structure of the heavy-atom two-dimensional layered, dichalcogenide, tungsten-diselenide (WSe 2 ). Our data, taken on mechanically exfoliated WSe 2 singlecrystals, provide direct evidence for shifting of the valence-band maximum from Γ (multilayer WSe 2 ), to K , (single-layer WSe 2 ). Further, our measurements also set a lower bound on the energy of the direct band-gap and provide dire… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

15
88
0
1

Year Published

2015
2015
2024
2024

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 93 publications
(104 citation statements)
references
References 49 publications
(57 reference statements)
15
88
0
1
Order By: Relevance
“…Monolayer (bilayer, bulk) WSe 2 exhibits a band gap of 2.2 (1.8, 1.3) ±0.1 eV as measured by STS [44]. Angle-resolved photoemission spectroscopy indicates the VBM of monolayer (bilayer, bulk) WSe 2 reside 1.8 (1.5, 1.1) eV from the Fermi level [72]. Error in photoemission measurements manifests in both the resolution of the spectrometer and also the method by which the VBM is extracted, typically on the order of ±0.03- 0.04 eV [73].…”
Section: Cr-wse 2 : Substantial Oxidation Of Low-φ Metal and Associatmentioning
confidence: 99%
“…Monolayer (bilayer, bulk) WSe 2 exhibits a band gap of 2.2 (1.8, 1.3) ±0.1 eV as measured by STS [44]. Angle-resolved photoemission spectroscopy indicates the VBM of monolayer (bilayer, bulk) WSe 2 reside 1.8 (1.5, 1.1) eV from the Fermi level [72]. Error in photoemission measurements manifests in both the resolution of the spectrometer and also the method by which the VBM is extracted, typically on the order of ±0.03- 0.04 eV [73].…”
Section: Cr-wse 2 : Substantial Oxidation Of Low-φ Metal and Associatmentioning
confidence: 99%
“…[9,10] In contrast, monolayer MoSe 2 grown epitaxially on bilayer graphene [11] and monolayer MoS 2 on HOPG [12] exhibit the band splitting of ∼180 meV. There is no consensus on whether the energy bands at the K (K') point in bulk WSe 2 are spin-polarized or not [13,14].…”
mentioning
confidence: 99%
“…It is noted that the energy difference of the top of the holelike bands between the and K points is 0.6 eV in monolayer WSe 2 while it is 0.1 0.4 eV in MoS 2 , MoSe 2 , and WS 2 . [9,10] This suggests that the band gap at the K (K') point in monolayer WSe 2 on bilayer graphene has the strongest "direct-gap" nature among known monolayer transitionmetal dichalcogenides. This may be related to the strong spin-orbit interaction in WSe 2 .…”
mentioning
confidence: 99%
See 1 more Smart Citation
“…Furthermore, the unique spin texture of both conduction and valence band makes SL TMDCs well-suited for studying quantum degrees of freedom such as spin or valley pseudospin or their interactions [15][16][17] . In the case of the tungsten dichalcogenides, much stronger spin-orbit coupling is expected than in the case of the Mo-based analogues, and the properties just enumerated should thus be more stable at room temperature [18][19][20] . Naively, a strong spin-orbit splitting of the bands can be expected to result in an increased band curvature near the top of the valence band and hence to a reduced effective mass; and indeed, WS 2 is predicted to be the best material among all of the TMDCs for a transistor channel, due to its low effective hole mass [21][22][23] .…”
Section: Introductionmentioning
confidence: 99%