Layered and homogeneous films of aluminum and aluminum/silicon with titanium and tungsten for multilevel interconnects

Gardner, Donald S.; Michalka, Timothy; Saraswat, Krishna C.; Barbee, Troy W.; McVittie, J.P.; Meindl, J.D.

doi:10.1109/t-ed.1985.21927

Cited by 55 publications

(8 citation statements)

References 16 publications

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“…During subsequent heat treatment (475°C, 0.4 h), the Al layer "extracts" silicon and boron from the single-crystal substrate through pores in the Al 3 Ti layer, favoring the growth of (111)-oriented grains. This is supported to some extent by the results reported by Gordner et al [24], who studied the Al-Ti-Si phase diagram and showed that the solid solubility of silicon in Al 3 Ti is higher than that in pure aluminum.…”

Section: Resultssupporting

confidence: 74%

Recrystallization Behavior of Aluminum Layers in Al/Ti/Si and Al/Ti/SiOx/Si Structures

Snitovsky

2005

Inorg Mater

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Section: Resultssupporting

confidence: 74%

Recrystallization Behavior of Aluminum Layers in Al/Ti/Si and Al/Ti/SiOx/Si Structures

Snitovsky

2005

Inorg Mater

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“…There was no evidence of any strain-temperature hysteresis for all of the a-SiN H thin films examined, which indicates that low-temperature annealing does not cause any noticeable microstructural variations in the a-SiN H films. This behavior is unlike that of some metallic alloys, which exhibit yield-induced hysteresis [23], [24]. X-ray photoelectron spectroscopy (XPS) of the film surface indicates the presence of an oxynitride interface layer [25].…”

Section: A Physical Propertiesmentioning

confidence: 94%

Evaluation of plasma deposited silicon nitride thin films for microsystems technology

Soh

Musca

Savvides

et al. 2005

J. Microelectromech. Syst.

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Plasma deposited silicon nitride thin films were deposited at temperatures between 150 C and 300 C. Diagnostic microstructures were fabricated from the thin films using bulk micromachining, and the strain was calculated from optical measurement of postbuckling deflection. The results indicate that the residual strain of the thin films is dominated by film-substrate thermal mismatch, with the coefficient of thermal expansion monotonically increasing with decreasing deposition temperature. Metal-insulator-metal devices of variable area were also fabricated to measure the dielectric constant, which was shown to be independent of deposition temperature. The importance of these results to microsystems technology (MST) was briefly discussed.[1441]Index Terms-Amorphous materials, dielectric films, electric field measurement, microelectromechanical devices, micromachining, plasma chemical vapor deposition (CVD), silicon compounds, strain measurement, thin films.

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“…That is why, for a very large chip with extremely small geometries, the delay time associated with interconnections becomes an appreciable part of the total delay time and in certain cases dominates the chip performance [13]. Consequently, increased attention is focused on either modelling [14] or towards the technological advance [15] of the interconnections.…”

Section: Introductionmentioning

confidence: 99%

Global Delay Time for General Distributed Networks With Applications to Timing Analysis of Digital Mos Integrated Circuits

Marinov

Neittaanmäki

1989

COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering

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If you would like to write for this, or any other Emerald publication, then please use our Emerald for Authors service information about how to choose which publication to write for and submission guidelines are available for all. Please visit www.emeraldinsight.com/authors for more information. About Emerald www.emeraldinsight.comEmerald is a global publisher linking research and practice to the benefit of society. The company manages a portfolio of more than 290 journals and over 2,350 books and book series volumes, as well as providing an extensive range of online products and additional customer resources and services.Emerald is both COUNTER 4 and TRANSFER compliant. The organization is a partner of the Committee on Publication Ethics (COPE) and also works with Portico and the LOCKSS initiative for digital archive preservation.ABSTRACT: We consider here a general nerwork composed by n-distributed parameters lines (with telegraph-equations models) and m-capacitors, all connected by a resistive multiport. An asymptotic stability property drives us to define and evaluate a global parameter ("λ-delay time") which describes the speed of signals propagation through the network. Because of its simplicity of calculation and its tightness, the given upper bound of the λ-delay time is useful in timing analysis of MOS integrated chips.

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Layered and homogeneous films of aluminum and aluminum/silicon with titanium and tungsten for multilevel interconnects

Cited by 55 publications

References 16 publications

Recrystallization Behavior of Aluminum Layers in Al/Ti/Si and Al/Ti/SiOx/Si Structures

Recrystallization Behavior of Aluminum Layers in Al/Ti/Si and Al/Ti/SiOx/Si Structures

Evaluation of plasma deposited silicon nitride thin films for microsystems technology

Global Delay Time for General Distributed Networks With Applications to Timing Analysis of Digital Mos Integrated Circuits

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