Layered materials with 2D connectivity for thermoelectric energy conversion

Samanta, Manisha; Ghosh, Tanmoy; Chandra, Sushmita; Biswas, Kanishka

doi:10.1039/d0ta00240b

Cited by 91 publications

(85 citation statements)

References 243 publications

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“…have been shown to be very effective in lattice thermal conductivity reduction. [11][12][13][14][15] Nevertheless, the role of carrier mobility in independently enhancing the PF (improving electrical conductivity without sacrificing the Seebeck coefficient [16,17] ) is often overlooked due to the difficulties in engineering the carrier scattering mechanisms, despite it is non-trivial. [16] Until recent years, related works on enhancing mobility by manipulating scattering mechanism in thermoelectrics has gradually emerged and mainly focused on bulk materials.…”

Section: Doi: 101002/adma202004786mentioning

confidence: 99%

Gate‐Tunable Polar Optical Phonon to Piezoelectric Scattering in Few‐Layer Bi₂O₂Se for High‐Performance Thermoelectrics

Yang

Suwardi

et al. 2020

Advanced Materials

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Section: Doi: 101002/adma202004786mentioning

confidence: 99%

Gate‐Tunable Polar Optical Phonon to Piezoelectric Scattering in Few‐Layer Bi₂O₂Se for High‐Performance Thermoelectrics

Yang

Suwardi

et al. 2020

Advanced Materials

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“…The excellent thermoelectric properties of SnSe promote the development of thermoelectric properties of group IV–VI chalcogenides at middle temperature. As a homologous compound of SnSe, GeSe has attracted much attention [ 9 – 18 ]. Hao et al .…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric performances for both p- and n-type GeSe

et al. 2021

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In this paper, the thermoelectric properties of p-type and n-type GeSe are studied systematically by using first principles and Boltzmann transport theory. The calculation includes electronic structure, electron relaxation time, lattice thermal conductivity and thermoelectric transport properties. The results show that GeSe is an indirect band gap semiconductor with band gap 1.34 eV. Though p-type GeSe has a high density of states near Fermi level, the electronic conductivity is relative low because there is no carrier transport pathway along the a -axis direction. For n-type GeSe, a charge density channel is formed near conduction band minimum, which improves the electrical conductivity of n-type GeSe along the a -axis direction. At 700 K, the optimal ZT value reaches 2.5 at 4 × 10 19 cm −3 for n-type GeSe, while that is 0.6 at 1 × 10 20 cm −3 for p-type GeSe. The results show n-type GeSe has better thermoelectric properties than p-type GeSe, indicating that n-type GeSe is a promising thermoelectric material in middle temperature.

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“…Layered materials exhibit intriguing electronic and phonon transports,which have recently been employed to achieve low thermal conductivity and high thermoelectric performance. [3] Theprime example is the achievement of ultra-high zT in orthorhombic layered SnSe due to significant lattice anharmonicity. [4] Consequently,GeSe has received significant attention because of its structural similarity with SnSe.GeSe exhibits layered orthorhombic structure (space group: Pnma) like SnSe at ambient conditions.…”

Section: Introductionmentioning

confidence: 99%

Metavalent Bonding in GeSe Leads to High Thermoelectric Performance

et al. 2021

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Orthorhombic GeSe is ap romising thermoelectric material. However,l arge band gap and strong covalent bonding result in al ow thermoelectric figure of merit, zT % 0.2. Here,w ed emonstrate am aximum zT % 1.35 at 627 K in p-type polycrystalline rhombohedral (GeSe) 0.9 (AgBiTe 2 ) 0.1 , which is the highest value reported among GeSe based materials.T he rhombohedral phase is stable in ambient conditions for x = 0.8-0.29 in (GeSe) 1Àx (AgBiTe 2 ) x .T he structural transformation accompanies change from covalent bonding in orthorhombic GeSe to metavalent bonding in rhombohedral (GeSe) 1Àx (AgBiTe 2 ) x .(GeSe) 0.9 (AgBiTe 2 ) 0.1 has closely lying primary and secondary valence bands (within 0.25-0.30 eV), which results in high power factor 12.8 mWcm À1 K À2 at 627 K. It also exhibits intrinsically low lattice thermal conductivity (0.38 Wm À1 K À1 at 578 K). Theoretical phonon dispersion calculations reveal vicinity of aferroelectric instability,with large anomalous Born effective charges and high optical dielectric constant, which, in concurrence with high effective coordination number,l ow band gap and moderate electrical conductivity,corroborate metavalent bonding in (GeSe) 0.9 (AgBiTe 2 ) 0.1 .W econfirmed the presence of low energy phonon modes and local ferroelectric domains using heat capacity measurement (3-30 K) and switching spectroscopyinpiezoresponse force microscopy, respectively.

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Layered materials with 2D connectivity for thermoelectric energy conversion

Abstract: The present review provides an in-depth insight into the structure–property relationship focusing on the electronic and phonon transport properties of various 2D layered state-of-the-art thermoelectric materials.

Cited by 91 publications

References 243 publications

Gate‐Tunable Polar Optical Phonon to Piezoelectric Scattering in Few‐Layer Bi₂O₂Se for High‐Performance Thermoelectrics

Gate‐Tunable Polar Optical Phonon to Piezoelectric Scattering in Few‐Layer Bi₂O₂Se for High‐Performance Thermoelectrics

Thermoelectric performances for both p- and n-type GeSe

Metavalent Bonding in GeSe Leads to High Thermoelectric Performance

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Layered materials with 2D connectivity for thermoelectric energy conversion

Abstract: The present review provides an in-depth insight into the structure–property relationship focusing on the electronic and phonon transport properties of various 2D layered state-of-the-art thermoelectric materials.

Cited by 91 publications

References 243 publications

Gate‐Tunable Polar Optical Phonon to Piezoelectric Scattering in Few‐Layer Bi2O2Se for High‐Performance Thermoelectrics

Gate‐Tunable Polar Optical Phonon to Piezoelectric Scattering in Few‐Layer Bi2O2Se for High‐Performance Thermoelectrics

Thermoelectric performances for both p- and n-type GeSe

Metavalent Bonding in GeSe Leads to High Thermoelectric Performance

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Product

Resources

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Gate‐Tunable Polar Optical Phonon to Piezoelectric Scattering in Few‐Layer Bi₂O₂Se for High‐Performance Thermoelectrics

Gate‐Tunable Polar Optical Phonon to Piezoelectric Scattering in Few‐Layer Bi₂O₂Se for High‐Performance Thermoelectrics