2021
DOI: 10.1039/d1ra06764h
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Layered Si–Ti oxide thin films with tailored electrical and optical properties by catalytic tandem MLD-ALD

Abstract: Layer-by-layer deposition of Si–Ti layered oxide thin films are obtained using catalytic tandem M/ALD methodology. The films exhibit optical (RI) and electrical conductivities by selecting the MLD to ALD proportion in the super cycle.

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Cited by 1 publication
(5 citation statements)
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“…Si2p gave two peaks at 102.0 and 102.6 eV associated with Si –O–Ti and Si –O–Si, respectively (Figure e) . This is in agreement with the Si–O–Si and Si–O–Ti interfacial bonds in the M/ALD layer growth mechanism previously reported by us …”
Section: Resultsmentioning
confidence: 99%
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“…Si2p gave two peaks at 102.0 and 102.6 eV associated with Si –O–Ti and Si –O–Si, respectively (Figure e) . This is in agreement with the Si–O–Si and Si–O–Ti interfacial bonds in the M/ALD layer growth mechanism previously reported by us …”
Section: Resultsmentioning
confidence: 99%
“…30 This is in agreement with the Si−O−Si and Si−O−Ti interfacial bonds in the M/ALD layer growth mechanism previously reported by us. 7 Ti2p XPS spectra (Figure 7d) showed two peaks at 458.3 and 458.7 eV, corresponding to the two species, Ti−O−Ti and Ti−O−Si, respectively. 31 O1s spectra reveal the formation of Ti−O−Ti, Ti−O−Si, and Si−O−Si species, with binding energies of 530.5, 531.3, and 532.3 eV, respectively (Figure 7c).…”
Section: Eds Elemental Mappingmentioning
confidence: 99%
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