LC-VCO in the 3.3- to 4-GHz Band Implemented in 32-nm Low-Power CMOS Technology

Ponton, D.; Knoblinger, G.; Roithmeier, A.; Cernoia, F.; Tiebout, M.; Fulde, M.; Palestri, Pierpaolo

doi:10.1109/tcsii.2011.2160033

Cited by 11 publications

(8 citation statements)

References 17 publications

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“…Low-power fully-integrated VCOs are also reported in [3], [4], but these works are narrow-band design Manuscript not suitable for multiband operation. On the other hand, several techniques have been demonstrated for the implementation of fully-integrated wideband VCOs with tuning range higher than 50% and excellent phase noise performance [5]- [19]. However, the reported power consumptions are not compatible with the requirements dictated by the ultra low-power low-data rate sub-GHz applications.…”

Section: Introductionmentioning

confidence: 99%

A 1-mW 1.13–1.9 GHz CMOS LC VCO Using Shunt-Connected Switched-Coupled Inductors

Italia¹,

Ippolito

Palmisano

2012

IEEE Trans. Circuits Syst. I

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A low-power wideband LC VCO has been designed and implemented in a 90-nm CMOS technology. Wide tuning range, low phase noise and low power consumption are achieved thanks to the adopted LC tank, which makes use of shunt-connected switched-coupled inductors and a proper arrangement of varactors. The shunt-connected switched-coupled inductors provide coarse tuning and phase noise optimization without using amplitude calibration loop or trimming of the bias current. The proposed varactors configuration employs accumulation mode thin and thick MOS devices, which has been differently biased to obtain tuning range maximization along with minimization of the amplitude-to-phase noise conversion. The LC-tank topology and inductor layout have been properly designed to attain a die area comparable to a single-inductor VCO, taking advantage of the inductors mutual coupling. The VCO exhibits a phase noise at 1-MHz offset frequency lower than over the entire tuning range and achieves at 1.2 GHz. It provides a tuning range of 51% from 1.13 GHz to 1.9 GHz with a tuning voltage ranging from 0 to 1.2 V. Despite a very low current consumption, which is 0.88 mA from a 1.2-V supply, the proposed VCO has the outstanding PFTN figure-of-merit of 10. The VCO core die area is 0.5 .Index Terms-CMOS voltage controlled oscillators, low-power circuits, phase noise, switched inductors, tuning range, wireless sensor networks.

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Section: Introductionmentioning

confidence: 99%

A 1-mW 1.13–1.9 GHz CMOS LC VCO Using Shunt-Connected Switched-Coupled Inductors

Italia¹,

Ippolito

Palmisano

2012

IEEE Trans. Circuits Syst. I

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“…The implicit assumption that the divider is not adding significant noise has been verified explicitly for VCO1 that has been measured also without the divider. Figure 8 reports the measured current consumption for all the implemented VCOs versus coarse tuning binary word (V tune = 0.6 V), which is comparable to conventional VCOs [3]. Figure 6 shows the measured fine tuning curves (top) and the K VCO (bottom) as a function of V tune for VCO1 and VCO4, that is, same width of the switch (4 mm) but different target frequency bands.…”

Section: Measurement Resultsmentioning

confidence: 84%

“…For an n-band system, the use of multiple voltage-controlled-oscillators (VCO) to generate the carrier signal requires n times the area of a single VCO implementation, while only one oscillator is active at any time. Capacitively tuned LC-VCOs provide large tuning ranges [3] but, to reduce the power consumption, large inductances are needed [4]. Thanks to its superior phase noise performance, the LC-VCO topology is usually preferred to the ring-oscillator one [2].…”

Section: Introductionmentioning

confidence: 99%

“…Thanks to its superior phase noise performance, the LC-VCO topology is usually preferred to the ring-oscillator one [2]. Capacitively tuned LC-VCOs provide large tuning ranges [3] but, to reduce the power consumption, large inductances are needed [4]. When the target frequency increases, the value of the capacitance and, in turn, the tuning range are thus reduced.…”

Section: Introductionmentioning

confidence: 99%

“…Figure 1 shows the schematic of the differential LC-VCO implemented in a 65 nm CMOS technology [20]. The topology is similar to the one in [3], apart from the removal of the tail coils and from the adoption of a switched coil. The CMOS active bridge, featuring both N-channel MOSFET (NMOS M n ) and P-channel MOSFET (PMOS M p ) cross-coupled pairs, exploits the current-reuse principle [4], enabling to reduce (theoretically halve) the current consumption for a given negative resistance, as in the switched coil VCO presented in [12].…”

Section: Introductionmentioning

confidence: 99%

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Design and implementation of switched coil LC‐VCOs in the GHz range using the self‐inductance technique

Cernoia

Ponton

Palestri

et al. 2013

Circuit Theory & Apps

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This paper presents the design and implementation of dual-band LC-VCOs in the GHz-range featuring a switched coil LC-tank. The proposed design exploits the self-inductance technique. The design of the coil starts from simple considerations and back-of-the-envelope calculations, then electromagnetic simulations are used to optimize the coil layout. The sizing of the switch and its impact on the VCO performance are addressed as well. The VCOs have been implemented in 65 nm CMOS technology. Good correlation between simulated and measured tuning range and phase noise is obtained for all designs, thus confirming the validity and robustness of the design methodology and coil models

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