Lead-free monocrystalline perovskite resistive switching device for temporal information processing

Mao, Jing‐Yu; Zheng, Zhi; Xiong, Ziyu; Huang, Pu; Ding, Guanglong; Wang, Ruopeng; Wang, Zhan‐Peng; Yang, Jiaqin; Zhou, Ye; Zhai, Tianyou; Han, Su‐Ting

doi:10.1016/j.nanoen.2020.104616

Cited by 120 publications

(109 citation statements)

References 91 publications

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“…[ 262–264 ] Moreover, various other novel types of halide perovskites and/or related device architectures have been recently reported with enhanced memory performance. [ 265–268 ] In this section, we will review up‐to‐date hybrid perovskite‐based RRAM devices with different dimensionality and composition. We will also discuss some opportunities and challenges lying ahead in this field.…”

Section: Rs Memories Based On Halide Perovskitesmentioning

confidence: 99%

Halide Perovskites: A New Era of Solution‐Processed Electronics

et al. 2021

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Organic–inorganic mixed halide perovskites have emerged as an excellent class of materials with a unique combination of optoelectronic properties, suitable for a plethora of applications ranging from solar cells to light‐emitting diodes and photoelectrochemical devices. Recent works have showcased hybrid perovskites for electronic applications through improvements in materials design, processing, and device stability. Herein, a comprehensive up‐to‐date review is presented on hybrid perovskite electronics with a focus on transistors and memories. These applications are supported by the fundamental material properties of hybrid perovskite semiconductors such as tunable bandgap, ambipolar charge transport, reasonable mobility, defect characteristics, and solution processability, which are highlighted first. Then, recent progresses on perovskite‐based transistors are reviewed, covering aspects of fabrication process, patterning techniques, contact engineering, 2D versus 3D material selection, and device performance. Furthermore, applications of perovskites in nonvolatile memories and artificial synaptic devices are presented. The ambient instability of hybrid perovskites and the strategies to tackle this bottleneck are also discussed. Finally, an outlook and opportunities to develop perovskite‐based electronics as a competitive and feasible technology are highlighted.

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Section: Rs Memories Based On Halide Perovskitesmentioning

confidence: 99%

Halide Perovskites: A New Era of Solution‐Processed Electronics

et al. 2021

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“…can be roughly grouped into oxides (such as SiO 2 , [17,21] HfO 2 , [18,23] TiO 2 , [19] ZnO, [20] CuO, [14] CoO, [22] ZrO 2 , [24] NbO x , [25] and VO 2 [26] ), 2D materials (e.g., h-BN, [13] WSe 2 , [16] MoS 2 , [27] and MoS 2 / graphene [35] ), perovskites (e.g., Cs 3 Sb 2 Br 9 [32] and MAPbI 3 [33] ), chalcogenides (such as AsTeSi, [29] GeTe, [30] and GeTe 8 [28] ), and others (e.g., PEDOT:PSS, [34] ferritin [31] ).…”

Section: Methodsmentioning

confidence: 99%

“…So far, large amounts of materials have been reported as electrodes for volatile memristors. We grouped the common electrode materials into four categories based on composition of electrodes, including pure metal electrodes such as Au, [32] Ag, [16] Cu, [21] Pt, [18] W, [34] and Ti; [20] nitride-based electrodes such as TiN; [23,30] conductive oxide-based electrodes such as ITO; [22,33] and semiconductor electrodes such as Si [25] and so on.…”

Section: Methodsmentioning

confidence: 99%

“…A lead-free monocrystalline perovskite (Cs 3 Sb 2 Br 9 ) volatile memristor was proposed by Mao et al An extremely low electrical field of 2.2 Â 10 5 V m À1 was needed for TS behavior of the device with two inert Au electrodes in this work. [32] The low electric field Reproduced with permission. [15] Copyright 2014, Wiley-VCH.…”

Section: Ionic Effectsmentioning

confidence: 99%

“…Mao et al reported a monocrystalline lead-free Cs 3 Sb 2 Br 9 perovskite (CSB) nanoflake-based lateral-structured memristor (Au/CSB/Au). [32] With different channel length, the CSB device would show TS (long channel) and bipolar resistance switching (short channel). Figure 10c shows the probability of TS and bipolar switching at different channel length.…”

Section: Volatile Memristor As Artificial Synapsementioning

confidence: 99%

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Recent Advances of Volatile Memristors: Devices, Mechanisms, and Applications

Wang

Yang

Mao

et al. 2020

Advanced Intelligent Systems

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153

113

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Due to the rapid development of artificial intelligence (AI) and internet of things (IoTs), neuromorphic computing and hardware security are becoming more and more important. The volatile memristors, which feature spontaneous decay of device conductance, own the distinct combination of high similarity to the biological neurons and synapses and unique physical mechanisms. They are excellent candidates for mimicking the synaptic functions and ideal randomness source of the entropy for hardware‐based security. Herein, the recent advances of volatile memristors in devices, mechanisms, and application aspects are summarized. First, a brief introduction is presented to describe the switching type, materials, and temporal response of volatile memristors. Second, the volatile switching mechanisms are discussed and grouped into ion effects, thermal effects, and electrical effects. Third, attention is focused on the applications of volatile memristors for access devices, neuromorphic computing (artificial neurons and synapses), and hardware security (true random number generators and physical unclonable functions). Finally, major challenges and future outlook of volatile memristors for neuromorphic computing and hardware security are discussed.

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Novel Electronic Devices Based on Perovskite Materials

Mao

Han

2022

Perovskite Materials and Devices

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Lead-free monocrystalline perovskite resistive switching device for temporal information processing

Cited by 120 publications

References 91 publications

Halide Perovskites: A New Era of Solution‐Processed Electronics

Halide Perovskites: A New Era of Solution‐Processed Electronics

Recent Advances of Volatile Memristors: Devices, Mechanisms, and Applications

Novel Electronic Devices Based on Perovskite Materials

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