Lead-free piezoceramics: Status and perspectives

Rödel, Jürgen; Li, Jing‐Feng

doi:10.1557/mrs.2018.181

Cited by 202 publications

(77 citation statements)

References 93 publications

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“…In 2004, Saito et al demonstrated that alkali niobate (K 0.5 Na 0.5 NbO 3 , KNN)-based ceramics exhibit piezoelectric properties comparable to the market-dominant lead zirconate titanate (PZT) [1]. Since then, considerable effort, fueled by worldwide regulations restricting the use of lead in electronic devices [2], has been devoted to further improve the piezoelectric properties of KNN-based solid solutions, now considered among the most promising lead-free piezoceramics [3].…”

Section: Introductionmentioning

confidence: 99%

Mechanochemically-Assisted Synthesis of Lead-Free Piezoelectric CaZrO3-Modified (K,Na,Li)(Nb,Ta)O3-Solid Solution

et al. 2018

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Lead-free piezoelectric 0.95(Na0.49K0.49Li0.02)(Nb0.8Ta0.2)O3–0.05CaZrO3 with 2 wt % MnO2 addition was prepared using mechanochemically-assisted solid-state synthesis. Upon mechanochemical activation of the mixture of reagents partial amorphization occurs which contributes to a significantly lower temperature of completion of the solid-state reaction, ~600 °C as opposed to ~700 °C for the conventional solid-state synthesis as determined by thermal analysis. The ceramic specimens prepared by the mechanochemically-assisted route exhibit improved compositional homogeneity and slightly enhanced piezoelectric properties, achieved in a considerably shorter processing time compared to the conventional solid-state synthesis route, which was studied as a reference.

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Section: Introductionmentioning

confidence: 99%

Mechanochemically-Assisted Synthesis of Lead-Free Piezoelectric CaZrO3-Modified (K,Na,Li)(Nb,Ta)O3-Solid Solution

et al. 2018

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“…Among these lead‐free piezoelectrics, KNN‐based ceramics have made great progress and achieved significant breakthroughs in the past 20 years, since a high d 33 (≈416 pC N −1 ) in (K,Na,Li)(Nb,Ta,Sb)O 3 ‐textured ceramics was reported by Satio et al. and eventually demonstrated large d 33 and high T C . In the meantime, KNN‐based ceramics have been considered to possess the closest characteristics with respect to PZT .…”

Section: Introductionmentioning

confidence: 99%

Potassium‐Sodium‐Niobate‐Based Thin Films: Lead Free for Micro‐Piezoelectrics

et al. 2019

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Extensive research and great progress of (K,Na)NbO 3 (KNN)-based lead-free piezoelectric films have been driven by the current legislation and the requirement for sustainable development of society and environment in the applications of microelectromechanical systems. A comprehensive discussion of the recent achievement in KNN-based films is presented herein. First, the available synthetic techniques, chemical modification, the ferroelectric and piezoelectric properties of KNN-based films are reviewed, followed by an introduction of the crystal structures and electrical properties of KNN-based epitaxial films in comparison with the bulk ceramics. Finally, the applications of KNN-based films for the sensors, the energy harvesters, and energy storage devices are addressed, and current challenges and prospects for future work are discussed.

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“…(See Table 1 .) In particular, recent legislation, the “Restriction of Hazardous Substances”, strictly limits the use of specific hazardous materials found in electrical and electronic products, which orient the research scope of electronic device and materials toward Pb‐free electronics . Hence, utilizing non‐toxic earth‐abundant substances for high‐performance and low‐power electronics must be a genuine and desirable research path for the sustainable future.…”

Section: Introductionmentioning

confidence: 99%

Low Voltage and Ferroelectric 2D Electron Devices Using Lead‐Free Ba_xSr_1‐xTiO₃ and MoS₂ Channel

Jeong

Jin

Park

et al. 2019

Adv Funct Materials

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Coupling between non‐toxic lead‐free high‐k materials and 2D semiconductors is achieved to develop low voltage field effect transistors (FETs) and ferroelectric non‐volatile memory transistors as well. In fact, low voltage switching ferroelectric memory devices are extremely rare in 2D electronics. Now, both low voltage operation and ferroelectric memory function have been successfully demonstrated in 2D‐like thin MoS2 channel FET with lead‐free high‐k dielectric BaxSr1‐xTiO3 (BST) oxides. When the BST surface is coated with a 5.5‐nm‐ultrathin poly(methyl methacrylate) (PMMA)‐brush for improved roughness, the MoS2 FET with BST (x = 0.5) dielectric results in an extremely low voltage operation at 0.5 V. Moreover, the BST with an increased Ba composition (x = 0.8) induces quite good ferroelectric memory properties despite the existence of the ultrathin PMMA layer, well switching the MoS2 FET channel states in a non‐volatile manner with a ±3 V low voltage pulse. Since the employed high‐k dielectric and ferroelectric oxides are lead‐free in particular, the approaches for applying high‐k BST gate oxide for 2D MoS2 FET are not only novel but also practical towards future low voltage nanoelectronics and green technology.

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Lead-free piezoceramics: Status and perspectives

Abstract: Abstract

Cited by 202 publications

References 93 publications

Mechanochemically-Assisted Synthesis of Lead-Free Piezoelectric CaZrO3-Modified (K,Na,Li)(Nb,Ta)O3-Solid Solution

Mechanochemically-Assisted Synthesis of Lead-Free Piezoelectric CaZrO3-Modified (K,Na,Li)(Nb,Ta)O3-Solid Solution

Potassium‐Sodium‐Niobate‐Based Thin Films: Lead Free for Micro‐Piezoelectrics

Low Voltage and Ferroelectric 2D Electron Devices Using Lead‐Free Ba_xSr_1‐xTiO₃ and MoS₂ Channel

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Lead-free piezoceramics: Status and perspectives

Abstract: Abstract

Cited by 202 publications

References 93 publications

Mechanochemically-Assisted Synthesis of Lead-Free Piezoelectric CaZrO3-Modified (K,Na,Li)(Nb,Ta)O3-Solid Solution

Mechanochemically-Assisted Synthesis of Lead-Free Piezoelectric CaZrO3-Modified (K,Na,Li)(Nb,Ta)O3-Solid Solution

Potassium‐Sodium‐Niobate‐Based Thin Films: Lead Free for Micro‐Piezoelectrics

Low Voltage and Ferroelectric 2D Electron Devices Using Lead‐Free BaxSr1‐xTiO3 and MoS2 Channel

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Low Voltage and Ferroelectric 2D Electron Devices Using Lead‐Free Ba_xSr_1‐xTiO₃ and MoS₂ Channel