2017 IEEE 19th Electronics Packaging Technology Conference (EPTC) 2017
DOI: 10.1109/eptc.2017.8277544
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Leading edge die stacking and wire bonding technologies for advanced 3D memory packages

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Cited by 5 publications
(2 citation statements)
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“…In the case of excessive current density, EM has a particularly serious impact on the reliability of electronic line connections, and is one of the most intractable problems in high-performance microelectronics components [68,69]. Due to the significant increase in power density and the development of ultra-fine pitch circuits for miniaturization, the problem caused by the EM phenomenon has become more prominent, and the main failures of modules are attributed to wear caused by EM at the wire interconnect [70,71]. Chen et al [72] studied the microstructure evolution and electromigration failure mechanism of Ag alloy bond wire, and found that EM-induced failure of AG-4Pd bonding wire occurred in a phased manner.…”
Section: Reliability Of Silver Wire Bondingmentioning
confidence: 99%
“…In the case of excessive current density, EM has a particularly serious impact on the reliability of electronic line connections, and is one of the most intractable problems in high-performance microelectronics components [68,69]. Due to the significant increase in power density and the development of ultra-fine pitch circuits for miniaturization, the problem caused by the EM phenomenon has become more prominent, and the main failures of modules are attributed to wear caused by EM at the wire interconnect [70,71]. Chen et al [72] studied the microstructure evolution and electromigration failure mechanism of Ag alloy bond wire, and found that EM-induced failure of AG-4Pd bonding wire occurred in a phased manner.…”
Section: Reliability Of Silver Wire Bondingmentioning
confidence: 99%
“…In the packaging process of three-dimensional memory chips, DAF (die attach film) is usually used for the die bond [23], with a typical thickness of 5−30 μm [24]. In this section, the influence of DAF thickness and the coefficient of thermal expansion (CTE) on warpage is investigated.…”
Section: Influence Of Die Bond Materials On Warpagementioning
confidence: 99%