Leakage and field emission in side-gate graphene field effect transistors

Bartolomeo, Antonio Di; Giubileo, Filippo; Iemmo, Laura; Romeo, Francesco; Russo, Saverio; Unal, Selim; Passacantando, M.; Grossi, V.; Cucolo, A. M.

doi:10.1063/1.4958618

Cited by 90 publications

(60 citation statements)

References 46 publications

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“…Such high value is in agreement with other reports on similar devices [41]. The 11 noise equivalent power (NEP), which represents the minimum detectable optical power, defined as the rms optical power required to produce a signal-to-noise ratio of 1 in a 1 Hz bandwidth, is less than 0.1 Wcm −2 . Since the signal increases linearly with the area, while the noise varies as the square root of the area of the photodiode [38], the detectivity…”

Section: Resultssupporting

confidence: 92%

Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect

et al. 2017

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We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricated by transfer of commercial graphene on low-doped n-type Si substrate, achieves a photoresponse as high as 3 AW −1 and a normalized detectivity higher than 3.5 × 10 12 cmHz 1/2 W −1 in the visible range. The device exhibits a photocurrent exceeding the forward current, because photo-generated minority carriers, accumulated at Si/SiO2 interface of the Gr/SiO2/Si capacitor, diffuse to the Gr/Si junction. We show that the same mechanism, when due to thermally generated carriers, although usually neglected or disregarded, causes the increased leakage often measured in Gr/Si heterojunctions. At room temperature, we measure a zero-bias Schottky barrier height of 0.52 eV, as well as an effectiveRichardson constant A**=4 × 10 −5 Acm −2 K −2 and an ideality factor n ≈ 3.6, explained by a thin (< 1nm) oxide layer at the Gr/Si interface.2

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Section: Resultssupporting

confidence: 92%

Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect

et al. 2017

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“…It has been observed that a PMMA film, or even only residues of it, cause p-type doping of graphene and other 2D channels due to the presence of oxygen. The p-type conduction is either explained considering the charge transfer to oxygen which, acting as electron capture center, suppresses the free electron density, or ascribed to the pinning of the Fermi level close to the maximum of the valence band, which favors the hole conduction [27,[37][38][39]. Here, we report a similar effect for WSe FETs.…”

Section: Resultssupporting

confidence: 56%

Environmental Effects on the Electrical Characteristics of Back-Gated WSe<sub>2</sub> Field Effect Transistors

Urban¹,

Martucciello²,

Peters³

et al. 2018

Preprint

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We study the effect of polymer coating, pressure, temperature and light on the electrical characteristics of monolayer WSe2 back-gated transistors with quasi-ohmic Ni/Au contacts. We prove that the removal of a layer of poly(methyl methacrylate) or a decrease of the pressure change the device conductivity from p to n-type. We demonstrate a gate-tunable Schottky barrier at the contacts and measure a barrier height of ~70 meV in flat-band condition. We report and discuss a temperature-driven change in the mobility and the subthreshold slope which we use to estimate the trap density at the WSe2/SiO2 interface. We study the spectral photoresponse of the device, that can be used as a photodetector with a responsivity of ~0.5 AW-1 at 700 nm wavelength and 0.37 mW/cm2 optical power.

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“…[], have been reported and GNR MOSFETs capable of modulating the drain current over several orders of magnitude by varying the gate voltage have been demonstrated . Moreover, well‐behaving GNR side‐gate transistors and GNR TTJ (three terminal junction) devices showing voltage rectification have been reported.…”

Section: Introductionmentioning

confidence: 99%

Graphene Nanoribbons for Electronic Devices

et al. 2017

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Graphene nanoribbons show unique properties and have attracted a lot of attention in the recent past. Intensive theoretical and experimental studies on such nanostructures at both the fundamental and application-oriented levels have been performed. The present paper discusses the suitability of graphene nanoribbons devices for nanoelectronics and focuses on three specific device types -graphene nanoribbon MOSFETs, side-gate transistors, and three terminal junctions. It is shown that, on the one hand, experimental devices of each type of the three nanoribbon-based structures have been reported, that promising performance of these devices has been demonstrated and/or predicted, and that in part they possess functionalities not attainable with conventional semiconductor devices. On the other hand, it is emphasized that -in spite of the remarkable progress achieved during the past 10 yearsgraphene nanoribbon devices still face a lot of problems and that their prospects for future applications remain unclear.

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Leakage and field emission in side-gate graphene field effect transistors

Cited by 90 publications

References 46 publications

Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect

Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect

Environmental Effects on the Electrical Characteristics of Back-Gated WSe<sub>2</sub> Field Effect Transistors

Graphene Nanoribbons for Electronic Devices

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