Leakage current analysis of La0.67Sr0.33MnO3/Nb:SrTiO3 p–n junctions

Pan, Ruikun; Xia, Zhengcai; He, Yunbin; Li, M. K.; Li, P.; Liu, P. K.

doi:10.1007/s00339-014-8348-9

Cited by 3 publications

(1 citation statement)

References 28 publications

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“…[ 1,2 ] In recent years, perovskite oxide heterostructures have attracted a lot of attention due to its potential applications compared with traditional p–n junctions. [ 3–6 ] As perovskite oxides have exotic electronic states, [ 7–9 ] the heterostructures which is composed of perovskite oxides, show plenty of interesting physical properties, such as rectifying characteristics, [ 10,11 ] photovoltaic effect, [ 12–14 ] positive colossal magnetoresistance, [ 15,16 ] resistive switching effect, [ 17 ] and so on. Numerous perovskite oxide heterostructures were developed for compound functional application, such as all‐oxide diode, memristor, solar cell, photodetector, and so on.…”

Section: Figurementioning

confidence: 99%

Rectifying Characteristics of the Perovskite Oxide La_1−xSr_xMnO₃/Nb‐0.7 wt%‐Doped SrTiO₃ Heterojunction

Zhang

Liu

Wang

et al. 2020

Physica Rapid Research Ltrs

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The influence of Sr‐doping on the rectifying characteristics of the perovskite oxide La1−xSrxMnO3/Nb‐0.7 wt%‐doped SrTiO3(LSMO/NSTO) heterojunction is studied systematically. Clear rectification characteristics are observed in the Au/LSMO/NSTO heterojunction with Sr‐doping rate of 0.1–0.6 at 300 K. The threshold voltage and Schottky barrier height increase linearly with the increase in Sr‐doping. Combined with first‐principles calculations, it is found that the variation of Sr‐doping concentration directly leads to a change in the LSMO work function, then a change in barrier height, and finally a change in the threshold voltage and rectification characteristics. Ultimately, it is proved that the rectification characteristics of the perovskite metal oxide heterostructure are consistent with the potential barrier mechanism of semiconductors. The rectifying characteristics of the perovskite oxide p–n junction can be well modulated by the change in energy band structure caused by Sr‐doping. These results lay a foundation for further understanding of the rectification characteristics of the perovskite oxide heterostructure and improving its application value.

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Section: Figurementioning

confidence: 99%

Rectifying Characteristics of the Perovskite Oxide La_1−xSr_xMnO₃/Nb‐0.7 wt%‐Doped SrTiO₃ Heterojunction

Zhang

Liu

Wang

et al. 2020

Physica Rapid Research Ltrs

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Understanding and modulation of resistive switching behaviors in PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3/Nb:SrTiO3 multilayer junctions

Zheng

Bai

Shao

et al. 2022

Applied Surface Science

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Effect of La0.67Sr0.33 MnO₃ Insertion Layer on the Ferroelectric and Resistive Switching Behaviors of PbZr0.52Ti0.48O₃/Nb:SrTiO₃ Heterostructures

Dong

Bai

Zheng

et al. 2020

NANO

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Recently, ferroelectric resistive switching (RS) effect in the ferroelectric/semiconductor heterostructures has been widely studied and the RS performance has been greatly improved. However, the relationships between ferroelectric and RS behaviors as well as interface structure of ferroelectric/semiconductor heterostructures need to be further studied. Herein, a La[Formula: see text]Sr[Formula: see text]MnO3 (LSMO) layer with the thickness of 7 nm is inserted into PbZr[Formula: see text]Ti[Formula: see text]O3/Nb:SrTiO3 (PZT/NSTO) heterostructures, and its effects on the ferroelectric and RS behaviors are investigated. The PZT/NSTO heterostructures show significantly asymmetric ferroelectric loops, and the RS ratio in which can reach to three orders of magnitude. However, by inserting the LSMO layer, the ferroelectric loops became relatively symmetric, but the RS effect almost disappeared. It can be considered that the LSMO layer affects the interfacial energy band structure of the PZT/NSTO heterostructures, which makes ferroelectric polarization lose its effect on the modulation of the depletion layer width. Therefore, the existence of the adjustable depletion layer is very important for the RS effect of ferroelectric/semiconductor heterostructures.

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Leakage current analysis of La0.67Sr0.33MnO3/Nb:SrTiO3 p–n junctions

Cited by 3 publications

References 28 publications

Rectifying Characteristics of the Perovskite Oxide La_1−xSr_xMnO₃/Nb‐0.7 wt%‐Doped SrTiO₃ Heterojunction

Rectifying Characteristics of the Perovskite Oxide La_1−xSr_xMnO₃/Nb‐0.7 wt%‐Doped SrTiO₃ Heterojunction

Understanding and modulation of resistive switching behaviors in PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3/Nb:SrTiO3 multilayer junctions

Effect of La0.67Sr0.33 MnO₃ Insertion Layer on the Ferroelectric and Resistive Switching Behaviors of PbZr0.52Ti0.48O₃/Nb:SrTiO₃ Heterostructures

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Leakage current analysis of La0.67Sr0.33MnO3/Nb:SrTiO3 p–n junctions

Cited by 3 publications

References 28 publications

Rectifying Characteristics of the Perovskite Oxide La1−xSrxMnO3/Nb‐0.7 wt%‐Doped SrTiO3 Heterojunction

Rectifying Characteristics of the Perovskite Oxide La1−xSrxMnO3/Nb‐0.7 wt%‐Doped SrTiO3 Heterojunction

Understanding and modulation of resistive switching behaviors in PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3/Nb:SrTiO3 multilayer junctions

Effect of La0.67Sr0.33 MnO3 Insertion Layer on the Ferroelectric and Resistive Switching Behaviors of PbZr0.52Ti0.48O3/Nb:SrTiO3 Heterostructures

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Rectifying Characteristics of the Perovskite Oxide La_1−xSr_xMnO₃/Nb‐0.7 wt%‐Doped SrTiO₃ Heterojunction

Rectifying Characteristics of the Perovskite Oxide La_1−xSr_xMnO₃/Nb‐0.7 wt%‐Doped SrTiO₃ Heterojunction

Effect of La0.67Sr0.33 MnO₃ Insertion Layer on the Ferroelectric and Resistive Switching Behaviors of PbZr0.52Ti0.48O₃/Nb:SrTiO₃ Heterostructures