Leakage current by Frenkel–Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures

Arslan, Engin; Bütün, Serkan; Özbay, Ekmel

doi:10.1063/1.3115805

Cited by 137 publications

(85 citation statements)

References 16 publications

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“…The performance and reliability of these devices are especially dependent on the formation barrier height at the M/S interface, R s of devices, doping concentration, and N ss [6][7][8][9][10][11][12][13][14][15][16]. In addition, the change in temperature has very important effects on the determination of such devices' parameters [16][17][18][19][20]. The existence of an interfacial insulator layer at the M/S interface and R s of a device significantly alters the device's C-V and G/…”

Section: Introductionmentioning

confidence: 99%

Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures

Arslan

Şafak

Altındal

et al. 2010

Journal of Non-Crystalline Solids

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a b s t r a c tThe temperature dependent capacitance-voltage (C-V) and conductance-voltage (G/x-V) characteristics of (Ni/Au)/Al 0.22 Ga 0.78 N/AlN/GaN heterostructures were investigated by considering the series resistance (R s ) effect in the temperature range of 80-390 K. The experimental results show that the values of C and G/x are strongly functioning of temperature and bias voltage. The values of C cross at a certain forward bias voltage point ($2.8 V) and then change to negative values for each temperature, which is known as negative capacitance (NC) behavior. In order to explain the NC behavior, we drawn the C vs I and G/x vs I plots for various temperatures at the same bias voltage. The negativity of the C decreases with increasing temperature at the forward bias voltage, and this decrement in the NC corresponds to the increment of the conductance. When the temperature was increased, the value of C decreased and the intersection point shifted towards the zero bias direction. This behavior of the C and G/x values can be attributed to an increase in the polarization and the introduction of more carriers in the structure. R s values increase with increasing temperature. Such temperature dependence is in obvious disagreement with the negative temperature coefficient of R or G reported in the literature. The intersection behavior of C-V curves and the increase in R s with temperature can be explained by the lack of free charge carriers, especially at low temperatures.

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Section: Introductionmentioning

confidence: 99%

Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures

Arslan

Şafak

Altındal

et al. 2010

Journal of Non-Crystalline Solids

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“…A number of metals have been investigated for AlGaN/GaN and InAlN/GaN HEMT structures, such as Ni, platinum (Pt), molybdenum (Mo), Cu, and iridium (Ir) [28]- [31] with Ni being the most commonly used contact metal. Usually, Au is used as a conductive overlay.…”

Section: Schottky Contactsmentioning

confidence: 99%

Testing the Temperature Limits of GaN-Based HEMT Devices

Maier

Alomari

Grandjean

et al. 2010

IEEE Trans. Device Mater. Relib.

131

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“…In general, for Schottky diode fabrication, the semiconductor surface is inevitably covered with a native thin insulating interfacial oxide layer if the semiconductor surface is prepared by the usual polishing and chemical etching process, in which the evaporation of metal is carried out in a conventional vacuum system. [19][20][21][22] The interfacial oxide layer is only a few monolayers thick. If this layer's thickness is smaller than 30 Å , most of the states are in equilibrium with the metal.…”

Section: Resultsmentioning

confidence: 99%

Investigation of Trap States in AlInN/AlN/GaN Heterostructures by Frequency-Dependent Admittance Analysis

Arslan

Bütün

Şafak

et al. 2010

Journal of Elec Materi

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We present a systematic study on the admittance characterization of surface trap states in unpassivated and SiN x -passivated Al 0.83 In 0.17 N/AlN/GaN heterostructures. C-V and G/x-V measurements were carried out in the frequency range of 1 kHz to 1 MHz, and an equivalent circuit model was used to analyze the experimental data. A detailed analysis of the frequency-dependent capacitance and conductance data was performed, assuming models in which traps are located at the metal-AlInN surface. The density (D t ) and time constant (s t ) of the surface trap states have been determined as a function of energy separation from the conduction-band edge (E c À E t ). The D st and s st values of the surface trap states for the unpassivated samples were found to be D st ffi ð4 À 13Þ Â 10 12 eV À1 cm À2 and s st % 3 ls to 7 ls, respectively. For the passivated sample, D st decreased to 1:5 Â 10 12 eV À1 cm À2 and s st to 1.8 ls to 2 ls. The density of surface trap states in Al 0.83 In 0.17 N/AlN/GaN heterostructures decreased by approximately one order of magnitude with SiN x passivation, indicating that the SiN x insulator layer between the metal contact and the surface of the Al 0.83 In 0.17 N layer can passivate surface states.

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Leakage current by Frenkel–Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures

Cited by 137 publications

References 16 publications

Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures

Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures

Testing the Temperature Limits of GaN-Based HEMT Devices

Investigation of Trap States in AlInN/AlN/GaN Heterostructures by Frequency-Dependent Admittance Analysis

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