Testing the Temperature Limits of GaN-Based HEMT Devices

Maier, David; Alomari, M.; Grandjean, N.; Carlin, J.-F.; diForte-Poisson, M.-A.; Dua, C.; Chuvilin, Andrey; Tománek, David; Gaquière, Christophe; Kaiser, Ute; Delage, S.; Kohn, E.

doi:10.1109/tdmr.2010.2072507

Cited by 131 publications

(53 citation statements)

References 46 publications

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“…17,18 Because of the ability of GaN material to withstand high temperatures, extensive reliability studies are present in literature for high temperature applications. 19 With the extensive applications of power devices at very low temperature, 20,21 such as deep space exploration et al, it is of great important also to investigate low temperature reliability behavior of GaN based HEMT. 22,23 The higher carrier mobility, the higher transconductance and the lower junction leakage have been found in power devices with lowering temperature.…”

Section: Introductionmentioning

confidence: 99%

Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature

Iervolino

2017

AIP Advances

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Degradation on DC characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) after applying pulsed gate stress at cryogenic temperatures is presented in this paper. The nitrogen vacancy near to the AlGaN/GaN interface leads to threshold voltage of stress-free sample shifting positively at low temperature. The anomalous behavior of threshold voltage variation (decrease first and then increase) under gate stressing as compared to stress-free sample is observed when lowing temperature. This can be correlated with the pre-existing electron traps in SiNX layer or at SiNX/AlGaN interface which can be de-activated and the captured electrons inject back to channel with lowering temperature, which counterbalances the influence of nitrogen vacancy on threshold voltage shift.

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Section: Introductionmentioning

confidence: 99%

Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature

Iervolino

2017

AIP Advances

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“…8. Figure 8 indicates that measured S11 and S22 are smaller than -8.5 dB and S21 is larger than 10 dB at the frequency between 8 From these results, although there still remains about 10% efficiency improvement for achieving high efficiency SSPA, it is confirmed that using GaN on SiC HEMT is feasible for small size and high efficiency high power amplifier.…”

Section: High Power Amplifiermentioning

confidence: 68%

“…In addition, GaN is considered having strong space-tolerant characteristics, such as the operability under high temperature or radiation condition [7][8][9] . Figure 1 indicates block diagram of an X-band GaN SSPA system.…”

Section: Gan Sspamentioning

confidence: 99%

Experimental Evaluation of an X-band GaN High Efficiency Onboard SSPA for Deep Space Missions

Kobayashi

Tomiki

Narita

et al. 2014

AEROSPACE TECHNOLOGY JAPAN

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This research proposes an X-band high efficiency onboard SSPA (solid-state power amplifier) for deep space missions by focusing on GaN (gallium nitride) HEMT (high electron mobility transistor) whose remarkable material properties, such as high thermal conductivity, wide band gap, and high breakdown voltage, are suitable for high power and high efficiency applications. Developing a high efficiency onboard SSPA is one of the great issues when we consider some missions toward Mars, Jupiter, and much farther planets because of the requirements of both ultra-long distance communication and low power consumption. As a first step toward developing a SSPA for deep space, a breadboard model is fabricated based on preliminary design. It consists of a buffer amplifier, a driver amplifier unit, a high power amplifier unit, an automatic level control unit, a variable attenuator, DC/DC convertors, and an over current protection unit. Here, GaN HEMT is used in both driver amplifier and high power amplifier units. RF (radio frequency) characteristics of these amplifier units are evaluated in experiments. The driver amplifier unit achieves output power of 31.5 dBm with power gain of 33.5 dB and less than -26 dBc of IM3 (third order intermodulation distortion) at P1dB (1dB compression point) at 8.425 GHz. Moreover, the maximum efficiency is up to 35.2%. On the other hand, the high power amplifier unit achieves 42.3 dBm of output power with 46.1% of PAE (power added efficiency) at P3dB (3dB compression point) at 8.40 GHz. In addition, the integrated GaN SSPA bread board model achieves the maximum output power of 41.9 dBm and the maximum total efficiency of 31.0% at 8.40 GHz. At least more than 5% total efficiency improvement can be seen compared to the previous onboard SSPAs. Moreover, space applicability of GaAs (gallium arsenide) MMIC (monolithic microwave integrated circuit), GaN HEMT and DC/DC convertor that are expected to be used in the SSPA are confirmed in total ionizing dose test.

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“…Previous publications have shown the use of Gd 2 O 3 grown by electron-beam heating [6] or molecular beam epitaxy (MBE) [7] on GaN or AlGaN/GaN structures. Thermal stability of GaN based HEMTs has been studied [8,9], but very little work has been devoted to the study of Gd 2 O 3 -AlGaN/GaN MOS-HEMTs.…”

Section: Introductionmentioning

confidence: 99%

Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd<inf>2</inf>O<inf>3</inf> as gate dielectric

Gao

Romero

Pampillón

et al. 2015

2015 10th Spanish Conference on Electron Devices (CDE)

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Abstract-Thermal stability of AlGaN/GaN MOS-HEMTs and -diodes using Gd 2 O 3 are investigated by means of different thermal cycles and storage tests up to 500ºC for one week. IV DC and pulsed characteristics of the devices before and after the processes are evaluated and compared with conventional HEMTs. Results show that the devices with Gd 2 O 3 dielectric layer have lower leakage current and a more stable behavior during thermal treatment processes compared with conventional devices. In fact, an excellent on/off ratio of about 10 8 and a stable V t is observed after storage at high temperature. The beneficial effects of Gd 2 O 3 on trapping effects of MOSHEMTs are also discussed.

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Testing the Temperature Limits of GaN-Based HEMT Devices

Cited by 131 publications

References 46 publications

Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature

Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature

Experimental Evaluation of an X-band GaN High Efficiency Onboard SSPA for Deep Space Missions

Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd<inf>2</inf>O<inf>3</inf> as gate dielectric

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