Leakage Power Reduction in CMOS Logic Circuits Using Stack ONOFIC Technique

Kumar, Chanchal; Mishra, Avinash; Sharma, Vibha

doi:10.1109/iccons.2018.8662955

Cited by 15 publications

(13 citation statements)

References 11 publications

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“…In this method, leakage-controlled transistor PM0S and NM0S transistors are inserted between logic cells, as shown in Fig. 2.1, with each transistor's gate terminal coupled to the source of another transistor [3]. Low power consumption is the result of the efficient stacking of transistors between the supply voltage ( and GND (ground) [7].…”

Section: B Lectormentioning

confidence: 99%

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Leakage Power Reduction in CMOS Logic Circuit Using Various Techniques

Priyanka¹,

V²

2022

Int J Res Rev

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Low power nowadays High-power consumption has turned into a crucial design criterion for VLSI an emerging field. When it comes to energy efficiency, high power dissipation is not thought to be beneficial to battery life in the case of battery-powered applications. It reduces the efficiency, dependability, and cooling expenses of battery life. The high-frequency dynamic variation of inputs is heavily influenced by switching and short-circuit leakage power. There are several common methods for reducing the power consumption of circuits. The average power consumption consists of static and dynamic power consumption. The power consumption comparison of LECT0R, LCNT, Stack 0N0FIC, and SAP0N of various low-power techniques. These circuits are simulated in the cadence tool. Keywords: LECT0R, LCNT, Stack 0N0FIC, and SAP0N Techniques, cadence tool (90nm).

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Section: B Lectormentioning

confidence: 99%

“…4.1. The block that was put into the logic is known as the Stack 0N0FIC block [3]. This block presents the lowest ON state hindrance and the highest OFF state hindrance.…”

Section: Stack Onoficmentioning

confidence: 99%

Leakage Power Reduction in CMOS Logic Circuit Using Various Techniques

Priyanka¹,

V²

2022

Int J Res Rev

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“…This leads to complex magnetic phases and is discussed in detail in the thesis of Mc-Nulty [47]. The leading contribution to the total moment coming from the orbital angular momentum rather than the spin in the light rare-earths is central to the results presented in this thesis, particularly in Chapter 6, where it is a central part of the interpretation 8 .…”

Section: The Magnetism Of the Rnmentioning

confidence: 90%

“…Here, C is the coverage of an element (atoms per unit area in a sample), I is the integrated intensity of a peak in the fluorescence spectrum, and anything with the subscript 'std ' is the same for the calibration standard (in our case this might be samples of GdN or SmN). The variables XC, DE, and LTF represent the x-ray crosssection of the relevant peak, the detector efficiency, and the live time fraction of the machine respectively 8 .…”

Section: Determining Compositionmentioning

confidence: 99%

“…A B S T RA C T Improvements to computing efficiency are required to offset the energy costs of increasing demand on cloud computing data centres (the cost of which is currently borne by fossil fuel energy production, and thus, the environment) [4]. The 20thcentury technologies that currently support our heavy use of computers are unable to keep providing efficiency improvements due to the fundamental limits associated with the physics that they rely on to operate, meaning that new physical mechanisms are required [5][6][7][8]. Improvements to computing efficiency are offered by superconducting computing, but the implementation of this technology requires cryogenically-viable memory, which is not currently available [9,10].…”

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Rare-earth nitride solid solutions

Miller¹

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Improvements to computing efficiency are required to offset the energy costs of increasing demand on cloud computing data centres (the cost of which is currently borne by fossil fuel energy production, and thus, the environment) [4]. The 20th-century technologies that currently support our heavy use of computers are unable to keep providing efficiency improvements due to the fundamental limits associated with the physics that they rely on to operate, meaning that new physical mechanisms are required [5–8]. Improvements to computing efficiency are offered by superconducting computing, but the implementation of this technology requires cryogenically-viable memory, which is not currently available [9, 10]. The research field of spintronics promises devices with plausible improvements over current memory technologies, but these devices require materials in which complex properties can be controlled [11, 12]. The rare-earth nitrides are a series of intrinsic ferromagnetic semiconductors, that have been included in device architectures with some success [13–15]. Their combination in a solid solution offers control over the magnetic and electrical properties of a homogenous single-layer thin film, allowing the fine-tuning of the properties to meet the requirements of application. Understanding the material properties of rare-earth nitride solid solutions is the central topic of this thesis. This thesis documents research into the properties of Gdx Sm1−x N, a solid solution of the rare-earth nitrides GdN and SmN. We present magnetometry, x-ray magnetic circular dichroism (XMCD), and Hall effect measurements on a series of GdxSm1−xN films. Magnetometry results show a linear dependence of the saturation magnetisation on the Gd fraction of the films, x, over much of the range 0 ≤ x ≤ 1. Further results show that GdxSm1−xN films with a low Gd fraction (x ≤ 0.3) exhibit perpendicular magnetic anisotropy. Films for which x ≤ 0.2 show a deviation from the linear dependence of the saturation magnetisation on x, and extremely low magnetic moments. This low moment results, in part, from the opposition of the net moment of the Gd3+ and Sm3+ ions. The opposition of the net moment comes from the orbital-dominant magnetism of the Sm3+ ion and the alignment of the Gd3+ and Sm3+ spins by the exchange interaction (which is confirmed by XMCD). This combination of the orbital-dominant magnetism of the Sm3+ ion and the alignment of the Gd3+ and Sm3+ spins by the exchange interaction also causes there to be compositions of GdxSm1−xN for which the net magnetic moment or the net angular momentum of the solution is zero. These “compensation points” are familiar from other classes of material generally held to be promising for similar applications [16, 17]. Measurements of XMCD show an increasing spin polarisation of Sm3+ as a function of x, changing where one expects to find the angular momentum compensation point xa. The value of xa is estimated with reference to the XMCD measurements to be xa = 0.245. Furthermore, measurements of the anomalous Hall effect are used to locate the compensation point of the net magnetic moment, xc , which is found to be xc = 0.05.

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