2019
DOI: 10.1080/08940886.2019.1634433
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Lensless EUV Lithography and Imaging

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Cited by 5 publications
(6 citation statements)
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“…To evaluate Zn(MA)(TFA) as a photoresist for EUV lithography, dense L/S patterns on the thin film (22-50 nm) were printed using the EUV-IL tool at the Paul Scherrer Institute. 48 SEM images (Fig. 1c) show that the transfer of L/S patterns needed a notably low dose.…”
Section: Resultsmentioning
confidence: 96%
“…To evaluate Zn(MA)(TFA) as a photoresist for EUV lithography, dense L/S patterns on the thin film (22-50 nm) were printed using the EUV-IL tool at the Paul Scherrer Institute. 48 SEM images (Fig. 1c) show that the transfer of L/S patterns needed a notably low dose.…”
Section: Resultsmentioning
confidence: 96%
“…RESCAN is a lensless microscope dedicated to EUV mask inspection operating at the Swiss Light Source synchrotron. 3 The microscope relies on coherent diffraction imaging (CDI) to reconstruct the complex amplitude of the mask surface.…”
Section: Apparatus Review: Rescan Euv Metrologymentioning
confidence: 99%
“…RESCAN is a lensless microscope dedicated to EUV mask inspection operating at the Swiss Light Source synchrotron. 2 The microscope relies on coherent diffraction imaging (CDI) to reconstruct the complex amplitude of the mask surface.…”
Section: Apparatus and Overall Test Proceduresmentioning
confidence: 99%
“…The complex amplitude of the sample is reconstructed using ptychography 3 , a noise-robust CDI technique that makes it possible to retrieve the phase and the amplitude of the object under investigation. RESCAN can detect amplitude defects as small as 50x50 nm 2 and characterize the phase of buried structures with an uncertainty of 2%. 4 In the current experiment, each of the reconstructed images has a pixel size of 32.5 nm and a spatial resolution of 45 nm.…”
Section: Apparatus and Overall Test Proceduresmentioning
confidence: 99%