2017
DOI: 10.1016/j.optmat.2016.09.018
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LGT (La 3 Ga 5.5 Ta 0.5 O 14 ) langatate bulk crystal grown from the melt by Czochralski technique and characterization

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Cited by 14 publications
(12 citation statements)
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“…The used crystal block is synthesized using the Czochralski method 18 and comes from Cristal Innov. The LGT resonators were achieved in Y-1° cut, thus, the turnover temperature is adjusted around 80°C.…”
Section: Motional Parametersmentioning
confidence: 99%
“…The used crystal block is synthesized using the Czochralski method 18 and comes from Cristal Innov. The LGT resonators were achieved in Y-1° cut, thus, the turnover temperature is adjusted around 80°C.…”
Section: Motional Parametersmentioning
confidence: 99%
“…An engine with a combustion pressure sensor can reduce NOx emissions by approximately 30%, and the emission of CO 2 , which is a cause of global warming, by about 10% [2]. La 3 Ga 5 SiO 14 (langasite) family single crystals are attractive piezoelectric materials for use in combustion pressure sensors because they show no phase transitions up to their melting temperature and can be easily grown to large sizes using the Czochralski (Cz) technique [3][4][5][6][7][8][9]. GaPO 4 crystals [10] and rare-earth (Re) calcium oxoborate ReCa 4 O(BO 3 ) 3 crystals [11] have also been reported to be promising candidates because the former has a high phase transition temperature of 930 • C and the latter maintains the piezoelectric property to its melting temperature of approximately 1600 • C. However, bulk growth of GaPO 4 crystals is very difficult [12], while ReCa 4 O(BO 3 ) 3 crystals have very low crystal symmetries (monoclinic m), and then show pyroelectricity [13].…”
Section: Introductionmentioning
confidence: 99%
“…It has been realized that one of the popular and well‐known growth methods from melt, the Czochralski pulling technique, is a right alternative to solution growth methods to grow defect free bulk single crystals of BNA. [ 16–23 ] Czochralski pulling technique from the melt is reliable and extensively used to obtain bulk single crystals of inorganic and organic materials for the electronic and optical applications. [ 17–21,23 ] Moreover, its significant features such as fast growth rate, unconstrained growth with container free atmosphere, necking process to avoid any defect formation, enabling to see growth stages at all circumstances, providing temperature stability of ±10.33emC to grow bulk size single crystals, can enable us to get perfect single crystals.…”
Section: Introductionmentioning
confidence: 99%