Li‐doped p‐type ZnS grown by molecular beam epitaxy

Ichino, Kunio; Matsuki, Yukako; Lee, S. T.; Nishikawa, Takashi; Kitagawa, Masahiko; Kobayashi, Hiroshi

doi:10.1002/pssc.200304125

Cited by 4 publications

(4 citation statements)

References 14 publications

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“…Therefore, it is worthwhile achieving p-type control in ZnS as both basic and applied research for optoelectronic devices operating in the visible to UV spectral range. So far, there have been several reports on p-type conduction in ZnS [2][3][4][5], including our results on ZnS:Li [6]; however, the properties and/or reproducibility have not met requirements for practical use. Although p-type ZnSe:N can be grown by molecular beam epitaxy (MBE) using an N 2 plasma source [7], there have been few reports on the application of this technique to ZnS.…”

Section: Introductioncontrasting

confidence: 53%

ZnS:N and ZnS:N,Ag grown by molecular beam epitaxy

Ichino

Kotani

Tanaka

et al. 2010

Phys. Status Solidi (c)

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The N-doping conditions have been investigated in the growth of ZnS:N by molecular beam epitaxy using RF plasma of N 2 gas. As a result, high growth temperatures are found to be suitable for the effective incorporation and the activation of N acceptors. The capacitance versus voltage data of the ZnS:N layers grown at around 350• C exhibit p-type behavior, while the undoped layers show an n-type characteristic due to residual donors. ZnS:N,Ag epitaxial layers were also grown to investigate the effect of Ag-co-doping. It is shown that the ptype behavior of the N-doped layers is enhanced by the Ag-co-doping. This suggests the formation of Ag-related complex centers compensating residual donors.

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Section: Introductioncontrasting

confidence: 53%

ZnS:N and ZnS:N,Ag grown by molecular beam epitaxy

Ichino

Kotani

Tanaka

et al. 2010

Phys. Status Solidi (c)

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“…A modification of the N-acceptor levels has been achieved by employing a codoping technique [3,4]. On the other hand, Li atoms were reported to act as shallow acceptors in ZnSe, ZnS and ZnO [5][6][7]. Despite shallow Li-acceptor levels, the hole-density of these compounds was fairly low.…”

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confidence: 97%

“…2 Experimental Acetate dihydrate was preheated at 100 °C for 30 min for the removal of crystal water, and subsequently was heated at 160 °C to sublime a volatile zinc complex, Zn 4 O(CH 3 COO) 6 . ZnO films were grown on sapphire substrates heated at 450 °C in an O 2 partial pressure of 2 Torr.…”

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confidence: 99%

Shallow Li‐acceptor levels in ZnO films codoped with Li and F atoms

Kobayashi

Tomita

Maeda

et al. 2008

Phys. Status Solidi (c)

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Li,F‐codoped ZnO films have been prepared by simultaneous evaporation of LiF at 780 °C during the ZnO growth. The codoped ZnO film has the resistivity of 79 Ωcm and the electron density of 6.8 ×1016 cm–3. Photoluminescence spectra of the codoped ZnO film in the range of 14 to 120 K show new emissions at 3.3136 and 3.3270 eV, besides bound excitonic emissions. The emission at 3.3136 eV disappears at a temperature higher than 40 K, and is assigned to donor‐acceptor pair emission. The emission at 3.3270 eV is ascribed to free‐electron to acceptor transition. The Li‐acceptor levels are estimated to be 0.11 eV from free‐electron to acceptor transition. As excitation intensity increases, the photon energy of the donor‐acceptor pair emission remains unchanged. These results lead to the interpretation that Li and F atoms are located at nearest neighbour sites in the ZnO lattice and that the presence of Li‐F complexes suppresses the formation of interstitial Li. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…1) It has also been studied as a wideband-gap semiconductor (E g ¼ 3:73 eV at RT) for application to UV/visible optical devices, where the difficulty in achieving p-type conduction has been a major obstacle. So far, there have been several reports on p-type conduction in ZnS; [2][3][4][5][6] however, pn-junction light-emitting devices using these p-type layers have never been reported. The ZnS-based light-emitting devices reported to date are likely to be based on a metal-insulator-semiconductor (MIS) or ''MS'' junction.…”

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confidence: 99%

ZnS-Based ZnSTe:N/n-ZnS Light-Emitting Diodes

Ichino¹,

Kojima²,

Obata³

et al. 2013

Appl. Phys. Express

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ZnS1-xTex:N/n-ZnS diodes have been fabricated in an attempt to convert ZnS into p-type by Te incorporation and the resulting upward shift of the valence band maximum. The diodes exhibit clear rectification in the current–voltage characteristic and a peak of the electron-beam-induced current at the ZnS1-xTex:N/n-ZnS interface. Furthermore, a ZnS0.85Te0.15:N/n-ZnS diode exhibits blue-green electroluminescence due to self-activated emission in n-ZnS at 290 K under a forward current. These results suggest p-type conduction in ZnS1-xTex:N, and thus the LED operation of a ZnS-based pn-junction.

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Li‐doped p‐type ZnS grown by molecular beam epitaxy

Cited by 4 publications

References 14 publications

ZnS:N and ZnS:N,Ag grown by molecular beam epitaxy

ZnS:N and ZnS:N,Ag grown by molecular beam epitaxy

Shallow Li‐acceptor levels in ZnO films codoped with Li and F atoms

ZnS-Based ZnSTe:N/n-ZnS Light-Emitting Diodes

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