Li-ion dual modulation in all-inorganic ZrLiO/InLiO aqueous solution-processed thin-film transistor for optoelectronic artificial synapse

Abstract

Implementation of brain-like neuromorphic computing systems with artificial synapses may broaden its advantages in the application field by providing devices with the characteristics of the optoelectronic response. However, all-inorganic optoelectronic synaptic devices based on solution-processed still remain largely unexplored. Therefore, ZrLiO/InLiO thin-film transistors (TFTs) based on Li-ion doping strategy are fabricated by a facile, carbon-free, and environmentally friendly aqueous solution route in this work. Li-ion is expected to play a dual modulation role in synaptic TFTs by promoting the formation of electric-double-layers and increasing the number of oxygen vacancies that can be excited by optical signals. The ZrLiO/InLiO TFT shows excellent multi-functional synaptic characteristics such as excitatory and inhibitory postsynaptic currents, paired-pulse facilitation, the transition from short-term memory to long-term memory. The optoelectronic device is sensitive to the optical signal and exhibits brain-like learning and memory abilities after repeated presynaptic stimulation. Besides, the classic biological Pavlov's dog experiments are successfully demonstrated to verify the associative learning ability of the artificial synapse. This result may provide a feasible and effective strategy for future optoelectronic neuromorphic computing devices.

Realization of Enhanced Long‐Term Visual Memory for Indium–Gallium–Zinc Oxide‐Based Optical Synaptic Transistor

“…[ 14–17 ] Therefore, in order to improve the visual information processing efficiency, optical synapses are also developed where it has both the synaptic functions and the photo‐sensing abilities. [ 18–33 ]…”

“…Different types of devices, such as memristors, field‐effect transistors, and phase change memories, have been studied for the application of artificial synapses. [ 16,18,19,24–41,44 ] Additionally, numerous materials including but not limited to low‐dimensional materials, perovskites, oxide semiconductors, and organic materials have been applied to artificial synapses. [ 16,18,19,24–32,41–44 ] Among these, oxide semiconductor thin‐film transistors show promising properties for optical synapses.…”

“…However, due to the lack of clear criteria between the LTM and the STM of synapses, the difference between them is difficult to discern as the difference between them is minimal due to linear increase in the current. [ 18,19,24,27–32 ]…”

“…[14][15][16][17] Therefore, in order to improve the visual information processing efficiency, optical synapses are also developed where it has both the synaptic functions and the photo-sensing abilities. [18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33] Different types of devices, such as memristors, field-effect transistors, and phase change memories, have been studied for the application of artificial synapses. [16,18,19,[24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41]44] Additionally, numerous materials including but not limited to low-dimensional materials, perovskites, oxide semiconductors, and organic materials have been applied to artificial synapses.…”

“…[18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33] Different types of devices, such as memristors, field-effect transistors, and phase change memories, have been studied for the application of artificial synapses. [16,18,19,[24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41]44] Additionally, numerous materials including but not limited to low-dimensional materials, perovskites, oxide semiconductors, and organic materials have been applied to artificial synapses. [16,18,19,[24][25][26][27][28][29][30][31]…”