Li2CO3-doped ZnO films prepared by RF magnetron sputtering technique for acoustic device application

Water, Willem van de; Chu, Sheng−Yuan; Juang, Yung Der; Wu, Shih Jeh

doi:10.1016/s0167-577x(02)00913-8

Cited by 65 publications

(21 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Doped ZnO films are generally deposited by pulsed laser deposition (PLD) [44][45][46][47][48], magnetron co-sputtering [49][50][51][52][53][54][55], including direct current (DC) reactive and radio-frequency (RF), molecular beam epitaxy (MBE) [56][57][58][59][60], chemical vapor deposition [61,62] and sol-gel methods [63][64][65][66][67]. It is known that piezoelectricity is related to the crystallographic quality of ZnO films and high c-axis orientation can lead to good piezoelectricity of ZnO films [68][69][70][71][72].…”

Section: Film Growth Of Tm-doped Znomentioning

confidence: 99%

Giant piezoresponse and promising application of environmental friendly small-ion-doped ZnO

Pan

Luo

Yang

et al. 2011

Sci. China Technol. Sci.

View full text Add to dashboard Cite

In recent years, with the growing concerns on environmental protection and human health, new materials, such as lead-free piezoelectric materials, have received increasing attention. So far, three types of lead-free piezoelectric systems have been widely researched, i.e., perovskites, bismuth layer-structured ferroelectrics, and tungsten-bronze type ferroelectrics. This article presents a new type of environmental friendly piezoelectric material with simple structure, the transition-metal(TM)-doped ZnO. Through substituting Zn 2+ site with small size ion, we obtained a series of TM-doped ZnO with giant piezoresponse, such as Zn 0.975 V 0.025 O of 170 pC/N, Zn 0.94 Cr 0.06 O of 120 pC/N, Zn 0.913 Mn 0.087 O of 86 pC/N and Zn 0.988 Fe 0.012 O of 127 pC/N. The tremendous piezoresponses are ascribed to the introduction of switchable spontaneous polarization and high permittivity in TM-doped ZnO.The microscopic origin of giant piezoresponse is also discussed. Substitution of TM ion with small ionic size for Zn 2+ results in the easier rotation of noncollinear TM-O1 bonds along the c axis under the applied field, which produces large piezoelectric displacement and corresponding piezoresponse enhancement. Furthermore, it proposes a general rule to guide the design of new wurtzite semiconductors with enhanced piezoresponses. That is, TM-dopant with ionic size smaller than Zn 2+ substitutes for Zn 2+ site will increase the piezoresponse of ZnO significantly. Finally, we discuss the improved performances of some TM-doped ZnO based piezoelectric devices.

show abstract

Section: Film Growth Of Tm-doped Znomentioning

confidence: 99%

Giant piezoresponse and promising application of environmental friendly small-ion-doped ZnO

Pan

Luo

Yang

et al. 2011

Sci. China Technol. Sci.

View full text Add to dashboard Cite

show abstract

“…In addition, ZnO is one of the II-VI compound semiconductors and is composed of hexagonal wurtzite crystal structure. As a matter of fact, ZnO has a variety of potential applications such as gas sensors [1], surface acoustic devices [2], transparent electrodes [3], and solar cells [4]. Various deposition techniques like sputtering [5], pulsed laser deposition (PLD) [6], chemical vapor deposition (CVD) [7], molecular beam epitaxy (MBE) [8], hydrothermal reaction [9], and sol-gel [10] have been widely employed in the deposition of ZnO thin films.…”

Section: Introductionmentioning

confidence: 99%

Growth and Characterization of Indium-Doped Zinc Oxide Thin Films Prepared by Sol-Gel Method

et al. 2012

View full text Add to dashboard Cite

Indium-doped ZnO thin films were deposited by sol-gel spin-coating method with various In content. The effects of In content on the structural and optical properties of the indium-doped ZnO thin films were investigated by scanning electron microscopy, X-ray diffraction, and UV-visible spectroscopy. The particle-like surface morphology and the crystallinity of the indium-doped ZnO thin films were affected by change in the In content, especially at the In content of 3 at.%. The values of direct band gap were decreased with increase in the In content. The width of localized states in the optical band gap of the indium-doped ZnO thin films were changed with In content and the Urbach energy (E U ) was changed inversely with optical band gap of the indium-doped ZnO thin films.

show abstract

“…As a matter of fact, simultaneous occurrence of both high optical transmittance in the visible range, and low resistivity make ZnO an important material in the manufacture of heat mirrors used in gas stoves, conducting coatings in aircrafts glasses to avoid surface icing, and thin film electrodes in amorphous silicon solar cells. ZnO is a member of the hexagonal wurtzite class; it is a semiconducting, piezoelectric and optical waveguide material and has a variety of potential applications such as sensors [1], surface acoustic devices [2], transparent electrodes [3], and solar cells [4,5]. Some of these applications are based on the simultaneous occurrence of low resistivity and high transmittance in the visible spectrum, when ZnO is manufactured in the form of thin solid films.…”

Section: Introductionmentioning

confidence: 99%

Effect of thickness on structural, optical and electrical properties of nanostructured ZnO thin films by spray pyrolysis

Rao

Kumar

2009

Applied Surface Science

211

View full text Add to dashboard Cite

Li2CO3-doped ZnO films prepared by RF magnetron sputtering technique for acoustic device application

Cited by 65 publications

References 21 publications

Giant piezoresponse and promising application of environmental friendly small-ion-doped ZnO

Giant piezoresponse and promising application of environmental friendly small-ion-doped ZnO

Growth and Characterization of Indium-Doped Zinc Oxide Thin Films Prepared by Sol-Gel Method

Effect of thickness on structural, optical and electrical properties of nanostructured ZnO thin films by spray pyrolysis

Contact Info

Product

Resources

About