Lifetime and intensity of photoluminescence after light induced creation of dangling bonds in a-Si:H

Ogihara, C.; Takemura, Hitoshi; Yoshimura, Tetsuzo; Morigaki, Kazuo

doi:10.1016/s0022-3093(01)01027-4

Cited by 10 publications

(3 citation statements)

References 13 publications

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“…Light-induced creation of dangling bonds (immobilized free radicals) has been considered to be the origin of the phenomenon 52,53 . Recently, the creation of high-density dangling bonds after pulsed-laser excitation has been observed in hydrogenated amorphous silicon 54,55 , which could partly explain the FLIGBS. Several models have been proposed to describe the mechanisms involved in the creation of dangling bonds under illumination with energy exceeding the band-gap energy, but this issue is still controversial 51,56 .…”

Section: Discussionmentioning

confidence: 99%

Nonlinear increase, invisibility, and sign inversion of a localized fs-laser-induced refractive index change in crystals and glasses

et al. 2020

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Multiphoton absorption via ultrafast laser focusing is the only technology that allows a three-dimensional structural modification of transparent materials. However, the magnitude of the refractive index change is rather limited, preventing the technology from being a tool of choice for the manufacture of compact photonic integrated circuits. We propose to address this issue by employing a femtosecond-laser-induced electronic band-gap shift (FLIBGS), which has an exponential impact on the refractive index change for propagating wavelengths approaching the material electronic resonance, as predicted by the Kramers-Kronig relations. Supported by theoretical calculations, based on a modified Sellmeier equation, the Tauc law, and waveguide bend loss calculations, we experimentally show that several applications could take advantage of this phenomenon. First, we demonstrate waveguide bends down to a submillimeter radius, which is of great interest for higher-density integration of fs-laser-written quantum and photonic circuits. We also demonstrate that the refractive index contrast can be switched from negative to positive, allowing direct waveguide inscription in crystals. Finally, the effect of the FLIBGS can compensate for the fs-laser-induced negative refractive index change, resulting in a zero refractive index change at specific wavelengths, paving the way for new invisibility applications.

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Section: Discussionmentioning

confidence: 99%

Nonlinear increase, invisibility, and sign inversion of a localized fs-laser-induced refractive index change in crystals and glasses

et al. 2020

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“…The samples used in this study were prepared at the substrate temperature in a range of 180-200°C. The illumination of the sample was done by pulsed light of 2.48 eV from YAG-OPO laser system at 10 K [7]. The intensity of the illuminating light and the illumination time were approximately 0.1 J/cm 2 and 1.0 h, respectively.…”

Section: Methodsmentioning

confidence: 99%

Light-induced effects on low energy photoluminescence in a-Si:H investigated by frequency-resolved spectroscopy

Ogihara

Yoshimura

Fujita³

et al. 2004

Journal of Non-Crystalline Solids

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“…(1), while it creates the radiative defects of considerable density. It has been pointed out that the photo-created DBs do not cause significant decrease of quantum efficiency, since their spatial distribution is inhomogeneous [9,10]. We need to consider such a spatial distribution to explain the results.…”

Section: Discussionmentioning

confidence: 99%

Light-induced creation of defects related to low energy photoluminescence in hydrogenated amorphous silicon

Ogihara¹,

Nomiyama²,

Yamamoto³

et al. 2006

Journal of Non-Crystalline Solids

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Lifetime and intensity of photoluminescence after light induced creation of dangling bonds in a-Si:H

Cited by 10 publications

References 13 publications

Nonlinear increase, invisibility, and sign inversion of a localized fs-laser-induced refractive index change in crystals and glasses

Nonlinear increase, invisibility, and sign inversion of a localized fs-laser-induced refractive index change in crystals and glasses

Light-induced effects on low energy photoluminescence in a-Si:H investigated by frequency-resolved spectroscopy

Light-induced creation of defects related to low energy photoluminescence in hydrogenated amorphous silicon

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