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We report on the results of performance evaluation tests of a JEOL model JBX-9300FS electronbeam nanolithography system operating at 100 kV. The system was tested in the areas of lithographic resolution, stability, exposure uniformity, and pattern placement accuracy. A minimum spot size of 4 nm was measured at a current of 100 pA. The spot remained below 6.5 nm for beam currents up to 8 nA. Maximum digital to analog converter linearity and deflection amplifier errors were below 0.5 nm. Pattern placement accuracy in a 50 mm square area was found to be within Ϯ16 nm and inside the 500 m writing field within Ϯ7 nm.

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