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The contact layer for the 22 nm logic node faces many technological hurdles. Even using techniques such as multipleexposure patterning and 193 nm immersion, it will be difficult to achieve the depth of focus and CD uniformity required for 22 nm production. Such difficulties can be mitigated by recent advances in Inverse Lithography Technology (ILT). For example, circular main features combined with complex curvilinear assist features can provide superior CD uniformity with the required depth of focus, particularly for isolated contacts. However, such a solution can lead to long mask write times, because the curvilinear shapes necessitate a higher shot count induced by inefficient data fracturing, even without considering the circular main features. The current approach is to Manhattanize the curvilinear features resulting in a nearly equivalent image quality on the wafer; but a further reduction in mask write times could help lower costs. This paper describes a novel mask-writing method that uses a production e-beam mask writer to write main features as circles, with curvilinear assist features, while reducing shot count compared to traditional Manhattanized masks. As a result the new method makes manufacturing of ideal ILT-type masks feasible from a technical as well as from an economic standpoint. Resist-exposed SEM images are presented that validate the new method.

As we prepare for 32nm-hp with 193nm immersion, complex and sometimes curvilinear shapes are going to be required on masks. Contacts and vias will be circular or oval in shape on the wafer, but are still drawn as over-sized squares or rectangles on masks and in CAD systems. Yet, for packing density of designs, particularly for DRAMs and SRAMs, in order to optimize for diagonal distances, a circular via shape on the mask is desirable. In addition, a circle has by definition the minimum perimeter for a given area, improving manufacturing tolerance. This paper demonstrates new techniques for writing circles of arbitrary diameters on masks efficiently and accurately using a production e-beam mask writer. Resist-exposed SEM images are shown, demonstrating the practicality of writing circles as mask shapes for production reticles.

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