PACS 05.30. Jp, 71.35.Cc Detailed characteristics of excitonic emission in indirect semiconductors are theoretically examined based on Bose -Einstein statistics and mathematical formulations for the excitonic emission lines are presented. In the calculation of the emission lines we take into account the collision of excitons using a conventional Lorentzian form for a spectral function. We also take into account higher order momentum dependence of the transition matrix and the excitation energy of excitons.