Lifetime characterization of capacitive RF MEMS switches

Goldsmith, C. Franklin; Ehmke, J.; Malczewski, A.; Pillans, B.; Eshelman, S.; Yao, Zheng; Brank, J.; Eberly, M.

doi:10.1109/mwsym.2001.966876

Cited by 292 publications

(191 citation statements)

References 3 publications

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“…The amount of charge trapped in the dielectric can be modeled as (1) where Q 1 is the steady-state charge density of the Jth species of trap, re and r D are the charging and discharging time constants, ton a|1 d 'OFF are the on and off times of the switch corresponding to the charging and discharging times. Switch lifetime has exhibited an exponential dependence on the control voltage [1], implying that either the charge density or the time constant is strongly dependent on voltage.…”

Section: Measurement Results and Model Extractionmentioning

confidence: 99%

Modeling and characterization of dielectric-charging effects in RF MEMS capacitive switches

Yuan

Hwang

Forehand

et al. 2005

IEEE MTT-S International Microwave Symposium Digest, 2005.

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The public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden, to Department of Defense, Washington Headquarters Services, Directorate for Information ABSTRACTFor the first time, charging and discharging of traps in the dielectric of state-of-the art RF MEMS capacitive switches were characterized in detail. Densities and time constants of different trap species were extracted under different control voltages. It was found that, while charging and discharging time constants are relatively independent of control voltage, steady-state charge densities increase exponentially with control voltage. A simple charge model was constructed to predict the amount of charge injected into the dielectric and the corresponding shift in actuation voltage. Good agreement was obtained between the model prediction and experimental data. SUBJECT TERMSMicroelectromechanical Systems (MEMS), Radio Frequency (RF), Microwave Devices

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Section: Measurement Results and Model Extractionmentioning

confidence: 99%

Modeling and characterization of dielectric-charging effects in RF MEMS capacitive switches

Yuan

Hwang

Forehand

et al. 2005

IEEE MTT-S International Microwave Symposium Digest, 2005.

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“…Therefore, more charges are accumulated and ΔV increases in longer actuation time. More importantly, the hold-down voltage drops to below 0-V, causing the membrane being stuck when the voltage is removed [1,3,4,6].…”

Section: Dielectric Chargingmentioning

confidence: 99%

“…Dual pulse (DP) [6], and novel dual-pulse (NDP) [1] are the methods of actuation voltage are presented in this paper. Approaches to calculate total accumulated charge under complex control waveforms are equivalent-circuit model and equation-based model that are illustrated in the following section.…”

Section: Dielectric Charging Due To Prevalent Actuation Voltagementioning

confidence: 99%

“…By actuating the membrane suspended electrostatically, it collapses on top of the dielectric [1,2,3,4,5,6,7,8]. Due to the high actuation voltage required to actuate the switch, the electric filed across the dielectric can be higher than 10 8 -V/m causing charge to readily tunnel from top and bottom electrodes into the dielectric which leads to an accumulation of trapped charge ( Fig.…”

Section: Introductionmentioning

confidence: 99%

“…1 (a)). With repeated ON-OFF cycles, charges gradually build up in the dielectric, which shifts the actuation voltage [1,2,3,6]. A simulation program with integrated circuit emphasis (SPICE) model is used to quantity dielectric charging [2].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Low actuation-voltage shift in MEMS switch using ramp dual-pulse

Zarghami

Mafinejad

Kouzani

et al. 2012

IEICE Electron. Express

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This paper proposes a ramp dual-pulse actuation-voltage waveform that reduces actuation-voltage shift in capacitive microelectromechanical system (MEMS) switches. The proposed waveform as well as two reported waveforms (dual pulse, and novel dual-pulse) are analyzed using equivalent-circuit and equation models. Based on the analysis outcome, the paper provides a clear understanding of trapped charge density in the dielectric. The results show that the proposed actuation-voltage waveform successfully reduces trapped charge and increases lifetime due to lowering of actuation-voltage shift. Using the proposed actuation-voltage waveform, the membrane reaches a steady state on the electrode faster.

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Micromachined Antennas

2002

RF MEMS and Their Applications

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Printed and bound in Great Britain by Biddles Ltd, Guildford and King's Lynn This book is printed on acid-free paper responsibly manufactured from sustainable forestry in which at least two trees are planted for each one used for paper production.xii PREFACE fabrication technologies can help realize high Q micromechanical filters for frequencies up to and beyond 10 MHz, and micromachined surface acoustic wave (SAW) filters filling the gap up to 2 GHz. Fabrication processes for all these devices and their relative advantages are taken up extensively in this book. In addition, a brief description of packaging approaches that may be extended for these devices is also included for the sake of comprehensiveness in coverage.We have endeavoured to present these topics so as to guide graduate students interested to do research in microfabrication techniques and their applications. It is therefore envisaged that parts of this books would form the curricula of electrical and mechanical engineering, applied physics or materials science departments. In addition, this would also serve as a reference book for practicing researchers in these areas for further widening the scope of their research.Materials for this book have been taken from an advanced level course offered at Pennsylvania State University recently on RF MEMS, and many short courses presented across the world. Valuable comments from the participants of these courses have helped in evolving the contents of this book and are greatly appreciated. In particular we also wish to thank many of our colleagues and students, Taeksoo Ji, Yanan Sha, Roopa Tellakula, Hargsoon Yoon, and Bei Zhu, at the Center for Electronic and Acoustic Materials and Devices for their contributions in preparing the manuscript for this book.We would like to thank Professors Vasundara V. Varadan and Richard McNitt for their support and encouragement. Our thanks are also due to our families, in particular Nisy John, for bearing with our preoccupation in preparing this manuscript. We are also indebted to various researchers for their valuable contributions cited in this book.We are also grateful to the publisher's staff for their support, encouragement and willingness to give prompt assistance during this book project.

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Lifetime characterization of capacitive RF MEMS switches

Cited by 292 publications

References 3 publications

Modeling and characterization of dielectric-charging effects in RF MEMS capacitive switches

Modeling and characterization of dielectric-charging effects in RF MEMS capacitive switches

Low actuation-voltage shift in MEMS switch using ramp dual-pulse

Micromachined Antennas

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