Lifetime enhancement in the laser-induced periodic surface structures on Si(100) probed by ultrafast transient absorption spectroscopy

Substrate-Dependent Ultrafast Charge-Carrier Dynamics: Unveiling the Annealing Effect on Optoelectronic Performance of Sb2Se3Thin Films

“…The PIA signal has a greater value of ΔR beyond 1200 nm which is attributed to a larger probability of reabsorption of a probe by thermally relaxed carriers at the band edge to corresponding energy states (beyond 1200 nm), or in other ways greater density of transient states corresponds to probe energies beyond 1200 nm. 25,58 Moreover, the kinetic profile indicates that there is a generation of hot carrier densities in excited states and a longer recombination lifetime, as given in Table S1. Further, considering the bare silicon response, we proposed that there is an occurrence of a charge-transfer mechanism where excited carriers are transferred from Sb 2 Se 3 to Si at the interface and then relax to the ground states.…”

Tuning Ultrafast Carrier Dynamics and Broadband Photo-Response of High-Performance Sb2Se3 Thin Film Photodetectors: A Substrate Dependent Study

“…However, apart from these intriguing properties, the substrate used in these devices plays a crucial role in the device fabrication. Surface morphology, surface modification by micronano structuring, − and the surface matching condition may highly influence the photocarriers and their broadband response. , There are numerous reports on photocarriers and their high wideband response with Sb 2 Se 3 . However, as far as we know, no studies have been reported to show substrate-dependent performance and response of the devices.…”