Lifetime evaluation of solder layer in an IGBT module under different temperature levels

Jiang, Nan; Chen, Minyou; Xu, Shengyou; Lai, Wu‐Wei; Gao, Bin; Chen, Yigao

doi:10.1109/ipemc.2016.7512797

Cited by 21 publications

(3 citation statements)

References 13 publications

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“…-Active cycling [10], [35] is more representative of the operating constraints because the temperature distribution in the module is created by the heating of the chip. This study shows that the upper and lower temperature limits as well as the duration of the cycles allow exciting some failure modes more than others.…”

Section: Accelerated Ageing Processmentioning

confidence: 99%

Contribution to Health Monitoring of Silicon Carbide MOSFET

Razik

Hologne-Carpentier

Allard

et al. 2021

Applied Condition Monitoring

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Power converters' usage is expanding ever in industrial ap-plications as they provide flexibility, high level of performances and new functionalities. However, with increased complexity come new constraints with respect to reliability. This chapter covers a study on reliability of a lab-scale power electronic module taken here as a vehicle. The downsizing of converters and new application-related operating constraints are accompanied by an increase in current density. The use of Silicon Car-bide wide-gap technology in power modules is therefore attracting but remains a challenge because this technology is not yet mature and does not benefit from the deep knowledge established about Silicon counter-part. Therefore, health monitoring has naturally emerged as an effective way to implement a reliability assessment. After a brief description of the expected failure modes, an experimental failure monitoring bench will be presented. The choice and implementation of failure indicators through a classification using a neural network will be discussed and presented.

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Section: Accelerated Ageing Processmentioning

confidence: 99%

Contribution to Health Monitoring of Silicon Carbide MOSFET

Razik

Hologne-Carpentier

Allard

et al. 2021

Applied Condition Monitoring

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“…[9,10] shows that more than half of the failures of electronic devices are caused by excessive temperature [11]. The solder layer is an important part of the IGBT module to establish electrical connection, mechanical support and cooling channel [12][13]. The function of the IGBT module largely depends on the reliability of the solder layer.…”

Section: Introductionmentioning

confidence: 99%

Monitoring method of solder layer void damage of IGBT module based on transfer function

Huang,

Sun,

Wang

et al. 2024

IEICE Electron. Express

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This paper proposes a method based on transfer function to monitor the solder layer void damage in IGBT modules. Firstly, the thermal resistance of each layer structure of IGBT module and the Cauer model is analyzed. Secondly, the process of obtaining the parameters of Cauer model by transfer function is analyzed. Finally, the thermal resistance of the IGBT module under different void fractions of the solder layer is measured by experiments, which obtains the relationship between the thermal resistance difference and the void fractions. In addition, this method is compared with the monitoring method by IEC standard, which verifies the accuracy and feasibility of this method.

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“…[6][7][8][9] studied the solder degradation through finite element method (FEM), but the simulation method for degradation is so ideal that cannot meet the reality very well. In the accelerated aging experiments [10][11][12], failure modes other than solder layers are not easily excluded, which makes the experimental results difficult to be interpreted accurately. A method for evaluating the health of solder layers from the transient cooling curves at a specific time window is proposed in [13], but it requires accurate T j measurement (ms level).…”

Section: Introductionmentioning

confidence: 99%

Impact of Solder Degradation on V _CE of IGBT Module: Experiments and Modeling

Jia

Huang

Xiao

et al. 2022

IEEE J. Emerg. Sel. Topics Power Electron.

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Solder degradation is one of the main packaging failure modes in insulated gate bipolar transistor (IGBT) modules, which is usually evaluated through the change of thermal resistance. However, due to the strong electro-thermal coupling in IGBT module, solder degradation also affects electrical characteristics, such as on-state voltage VCE. The impact mechanism of solder degradation on VCE is analyzed in this paper firstly. For the study of the solder degradation independently, a press-packing setup is designed for the accelerated aging test, which can remove the influence of bond wires degradation and significantly improve the experimental efficiency. Then, the IGBT equivalent resistance is defined, which conforms to Ohm's law in calculation and can respond to the dynamic current in real time. So, it could be conveniently used in the finite element methodbased simulation. Meanwhile, a realistic 3D degradation model of solder layer is constructed by image processing method. Furthermore, an electro-thermal coupling model based on finite element is constructed to study the impact of solder degradation on the electrical and thermal characteristics of IGBT. Finally, the proposed degradation mechanism is verified by simulation and experimental results. Index Terms-Insulated gate bipolar transistor (IGBT), solder degradation, failure modes decoupling, electro-thermal model Impact of Solder Degradation on V CE of IGBT Module: Experiments and Modeling I Manuscript

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Lifetime evaluation of solder layer in an IGBT module under different temperature levels

Cited by 21 publications

References 13 publications

Contribution to Health Monitoring of Silicon Carbide MOSFET

Contribution to Health Monitoring of Silicon Carbide MOSFET

Monitoring method of solder layer void damage of IGBT module based on transfer function

Impact of Solder Degradation on V _CE of IGBT Module: Experiments and Modeling

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