Lifetime Extension of Power Semiconductor Devices by Closed-Loop Junction Temperature Control

Ruthardt, Johannes; Klinkhammer, Arvid; Marx, Philipp; Ziegler, Philipp; Nitzsche, Maximilian; Sharma, Kanuj; Roth-Stielow, Jörg

doi:10.23919/epe21ecceeurope50061.2021.9570681

Cited by 5 publications

(3 citation statements)

References 17 publications

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“…In particular, this model can be used in the intelligent gate drivers to perform active thermal control [9], [24]- [26] for enhancing either efficiency or reliability of the power electronic converters. The presented real-time model of the DAB converter lowers the simulation time significantly and can be used in digital control design [27], [28]. Furthermore, it can be employed in estimating the remaining lifespan using lifetime models [29].…”

Section: Introductionmentioning

confidence: 99%

Real-Time Discrete Electrothermal Model of Dual Active Bridge Converter for Photovoltaic Systems

Vivekanandham Pushpalatha,

Philipps,

Baumann

et al. 2024

IEEE J. Emerg. Sel. Topics Power Electron.

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Renewable energy systems have stochastic generation profiles, which affect the performance of the power electronic converters in these systems, especially due to the excessive thermal cycling. In particular, the power semiconductor devices, the most vulnerable components in the power electronic converters, with excessive variation in the junction temperature have reduced lifetime and reliability. Simulating the thermal behaviour of the power devices to study the variations for long periods is not feasible with traditional simulation tools. Consequently, realtime simulations are carried out in such situations. This article presents a real-time discrete electro-thermal model of the dual active bridge converter operating in a photovoltaic system to study the junction temperature variations of the SiC MOSFETs. This model is realized using a low-cost development board with a real-time dual-core microcontroller. This model can subsequently be used to complement the real-time tuning of smart gate drivers to enhance the performance of the SiC MOSFETs. The real-time model is based on experimental data and its performance has been validated using commercially available simulation software.

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Section: Introductionmentioning

confidence: 99%

Real-Time Discrete Electrothermal Model of Dual Active Bridge Converter for Photovoltaic Systems

Vivekanandham Pushpalatha,

Philipps,

Baumann

et al. 2024

IEEE J. Emerg. Sel. Topics Power Electron.

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“…Variations in ambient temperature and power loss during work cause temperature swings. Due to different coefficients of thermal expansion, temperature swings lead to thermomechanical stresses between the material layers inside the modules [6]. Under the long-term effect of thermomechanical stress, thermal fatigue is prone to occur in solder layers, and the bond wires are vulnerable to breaking and peeling off, which are the two most common types of failure [7].…”

Section: Introductionmentioning

confidence: 99%

“…The authors of [16] propose a strategy to design the reference junction temperature swing based on the distribution characteristics of a consumed lifetime and the thermal control efficiency. Similarly, a closedloop junction temperature control system, which is able to reduce occurring temperature swings in order to reduce damage and extend the expected lifetime, is presented in [6]. Through electro-thermal analysis via finite element modeling, Ahsan et al [9] proposed a driving strategy in which the switching frequency is adjusted based on power losses to mitigate stresses on the IGBT.…”

Section: Introductionmentioning

confidence: 99%

Insulated Gate Bipolar Transistor Reliability Study Based on Electro-Thermal Coupling Simulation

et al. 2023

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This paper presents a new electro-thermal coupling simulation method for evaluating the reliability of IGBT modules, which combines a numerical power loss model and a finite element model. To illustrate the method, a specific case of the Infineon FF50R12RT4 module operated with an SPWM signal is considered. Temperature and stress data are obtained and analyzed via electro-thermal simulation, and the service life of modules is calculated accordingly. The influence of ambient temperature and gate signal characteristics on power loss and service life of IGBT modules is discussed, which can be used for the optimization of work points. In this method, the effect of junction temperature on power loss is considered, and a more accurate electro-thermal simulation is achieved. The proposed method can be used to analyze the thermal and mechanical stresses of IGBT modules, predict the failure location, and assess the service life.

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Novel Junction Temperature Optimized Operation of Dual Active Bridge Converter Using Extended-Phase-Shift Modulation Featuring SiC MOSFETs

Pushpalatha

Peftitsis

2022

2022 IEEE Energy Conversion Congress and Exposition (ECCE)

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Lifetime Extension of Power Semiconductor Devices by Closed-Loop Junction Temperature Control

Cited by 5 publications

References 17 publications

Real-Time Discrete Electrothermal Model of Dual Active Bridge Converter for Photovoltaic Systems

Real-Time Discrete Electrothermal Model of Dual Active Bridge Converter for Photovoltaic Systems

Insulated Gate Bipolar Transistor Reliability Study Based on Electro-Thermal Coupling Simulation

Novel Junction Temperature Optimized Operation of Dual Active Bridge Converter Using Extended-Phase-Shift Modulation Featuring SiC MOSFETs

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