Lifetime‐killing defects in 4H‐SiC epilayers and lifetime control by low‐energy electron irradiation

Kimoto, Tsunenobu; Danno, Katsunori; Suda, Jun

doi:10.1002/pssb.200844076

Cited by 122 publications

(103 citation statements)

References 38 publications

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“…This measured carrier lifetime in as-grown 3C-SiC is much higher than the reported values in 3C-SiC grown by other methods, [19][20][21] even a little bit higher than the typical values in as-grown 4H-SiC. [11][12][13][14][15] The maximum carrier lifetime reported in asgrown 4H-SiC is 8.6 ls, 11 which was measured by l-PCD in a high-quality 50 lm thick CVD epilayer under an injection of 5 Â 10 12 cm À2 . The measured conditions are quite similar to our measurements.…”

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confidence: 56%

“…[11][12][13][14][15][16] The main lifetime-limiting defects are recognized as Z 1/2 and EH 6/7 centers, which are related to intrinsic defects with energy levels located at 0.65 eV and 1.55 eV below the conduction band, respectively. [11][12][13][14] Recently, it was shown that the reduction of the defects of Z 1/2 and EH 6/7 by post-growth processes results in an improvement of carrier lifetime. Kimoto et al 15 reported that the carrier lifetime in a 148-lm-thick 4H-SiC layer is enhanced from 0.69 to 9.5 ls after thermal treatment.…”

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confidence: 99%

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Considerably long carrier lifetimes in high-quality 3C-SiC(111)

Sun

Ivanov

Liljedahl

et al. 2012

Applied Physics Letters

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As a challenge and consequence due to its metastable nature, cubic silicon carbide (3C-SiC) has only shown inferior material quality compared with the established hexagonal polytypes. We report on growth of 3C-SiC(111) having a state of the art semiconductor quality in the SiC polytype family. The x-ray diffraction and low temperature photoluminescence measurements show that the cubic structure can indeed reach a very high crystal quality. As an ultimate device property, this material demonstrates a measured carrier lifetime of 8.2 mu s which is comparable with the best carrier lifetime in 4 H-SiC layers. In a 760-mu m thick layer, we show that the interface recombination can be neglected since almost all excess carriers recombines before reaching the interface while the surface recombination significantly reduces the carrier lifetime. In fact, a comparison of experimental lifetimes with numerical simulations indicates that the real bulk lifetime in such high quality 3C-SiC is in the range of 10-15 mu s

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confidence: 56%

mentioning

confidence: 99%

Considerably long carrier lifetimes in high-quality 3C-SiC(111)

Sun

Ivanov

Liljedahl

et al. 2012

Applied Physics Letters

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“…However, a very long carrier lifetime could increase the recovery time, leading to the decrease of the switching frequency and the increase of the witching loss. Thus, shorter carrier lifetime under low injection condition is preferred for energy-saving [50,51].…”

Section: Carrier Lifetime In Sicmentioning

confidence: 99%

“…This center is the lifetime killing defect in SiC grown by chemical vapour deposition (CVD) [50,51,[75][76][77]. The Z 1 /Z 2 is one of the most common deep levels in as-grown material [73] and very thermally stable [72].…”

Section: Negative-u Center Z 1 /Z 2 In 4h-sicmentioning

confidence: 99%

“…The Z 1 /Z 2 is one of the most common deep levels in as-grown material [73] and very thermally stable [72]. Since this center governs the carrier lifetime in as-grown CVD epitaxial layers [50,51,[75][76][77], it had been intensively studied. Different defect models such as the divacancy [72], nitrogen-related defect [78] or Ndicarbon interstitial complex [79] had been suggested for Z 1 /Z 2 .…”

Section: Negative-u Center Z 1 /Z 2 In 4h-sicmentioning

confidence: 99%

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Electron Paramagnetic Resonance studies of negative-U centers in AlGaN and SiC

Trinh¹

2015

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Silicon (Si) is the most commonly used n-type dopant in AlGaN, but the conductivity of Si-doped Al x Ga 1-x N was often reported to drop abruptly at high Al content (x>0.7) and the reason was often speculated to be due to either compensation by deep levels or self-compensation of the so-called DX (or negative-U) center. Understanding the electronic structure of Si and carrier compensation processes is the essential for improving the n-type doping of high-Al-content Al x Ga 1-x N. In our studies of Si-doped AlGaN layers grown by metal-organic chemical vapor deposition, Electron Paramagnetic Resonance (EPR) was used to study the electronic structure of Si in high-Al-content Al x Ga 1-x N.From the temperature dependence of the concentration of the Si donor on the neutral charge state E d determined by EPR, we showed that Si already forms a stable DX center in Al x Ga 1-x N with x ~0.77. However, with the Fermi level locating only ~3 meV below E d , Si still behaves as a shallow donor and high conductivity at room temperature could be achieved in Al 0.77 Ga 0.23 N:Si layers. In samples with the concentration of the residual oxygen (O) impurity larger than that of Si, we observed no carrier compensation by O in Al 0.77 Ga 0.23 N:Si layers, suggesting that at such Al content, O does not seem to hinder the n-type doping in the material. The result is presented in paper 1.In paper 2, we determined the dependence of the E DX level of Si on the Al content in Al x Ga 1-x N:Si layers (0.79≤x≤1) with the Si concentration of ~2×10 18 cm -3 and the concentrations of residual O and C impurities of about an order of magnitude lower (~1÷2×10 17 cm -3 ). We found the coexistence of two DX centers (stable and metastable ones) of Si in Al x Ga 1-x N for x≥0.84. For the stable DX center, abruptly deepening of E DX with increasing of the Al content for x≥0.83 was observed, explaining the drastic decrease of the conductivity as often reported in previous transport studies. For the metastable DX center, the E DX level remains close to E d for x=0.84÷1 (~11 meV for AlN).The Z 1 /Z 2 defect is the most common deep level revealed by Deep Level Transient Spectroscopy (DLTS) in 4H-SiC epitaxial layers grown by chemical vapor deposition (CVD). It has previously been shown by DLTS to be a negative-U system which is more stable with capturing two electrons. The center is also known to be the lifetime killer in asiv grown CVD material and, therefore, attracts much attention. Despite nearly two decades of intensive studies, including theoretical calculations and different experimental techniques, the origin of the Z 1 /Z 2 center remains unclear. EPR is known to be a powerful method for defect identification, but a direct correlation between EPR and DLTS is difficult due to different requirements on samples for each technique. Using high n-type 4H-SiC CVD free-standing layers irradiated with lowenergy (250 keV) electrons, which mainly displace carbon atoms creating C vacancies, C interstitials and their associated defects, it was possible...

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Epitaxial Growth of Silicon Carbide

Kimoto¹,

Cooper

2014

Fundamentals of Silicon Carbide Technology

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Lifetime‐killing defects in 4H‐SiC epilayers and lifetime control by low‐energy electron irradiation

Cited by 122 publications

References 38 publications

Considerably long carrier lifetimes in high-quality 3C-SiC(111)

Considerably long carrier lifetimes in high-quality 3C-SiC(111)

Electron Paramagnetic Resonance studies of negative-U centers in AlGaN and SiC

Epitaxial Growth of Silicon Carbide

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