Lift-off of epitaxial GaN by regrowth over nanoporous GaN

Kang, Jin-Ho; Lee, June Key; Ryu, Sang‐Wan

doi:10.1016/j.jcrysgro.2012.09.034

Cited by 16 publications

(28 citation statements)

References 17 publications

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“…Annealing was carried out at 1090°C for 10 min, and a thick InGaN layer was then regrown at 770°C. The transformation of the geometry of the NP GaN layers during the high-temperature annealing and regrowth has been reported previously [24,25]. NP GaN is metastable at high temperatures because of the large surface area; this results in the transformation of the geometry of the nanopores via surface atomic diffusion.…”

Section: Resultsmentioning

confidence: 64%

“…NP GaN is metastable at high temperatures because of the large surface area; this results in the transformation of the geometry of the nanopores via surface atomic diffusion. The highly porous layer was transformed into a layer containing spherical voids, and subsequently the voids in the GaN formed a porous network via the connection of neighboring voids following high-temperature annealing [23,25]. The lowporosity layer was sealed due to surface diffusion; the thickness was slightly reduced to *250 nm.…”

Section: Resultsmentioning

confidence: 99%

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Optical study of phase-separated thick InGaN layers grown on a compliant substrate

et al. 2015

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The optical properties of thick InGaN layers grown on a compliant substrate (CS) were investigated. The CS was fabricated by thermal deformation of nanoporous GaN during high-temperature annealing. The strain sharing between the InGaN with CS was characterized using high-resolution X-ray diffraction, and we found a reduced in-plane strain of the InGaN on the CS. Photoluminescence (PL) spectra exhibited double peaks associated with discontinuous strain relaxation during the growth of the InGaN films. The strain sharing suppressed defect formation in the InGaN grown on CS, whereas the degree of indium fluctuation was similar because the phase separation resulted from spinodal decomposition. The temperature dependence of the PL spectra and internal quantum efficiency were analyzed as a function of the thickness of the InGaN layer. The effects of the CS on the growth of thick InGaN layers are discussed.

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Section: Resultsmentioning

confidence: 64%

Section: Resultsmentioning

confidence: 99%

Optical study of phase-separated thick InGaN layers grown on a compliant substrate

et al. 2015

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“…The initial shape of the nanopores determines the final shape of nanopores after deformation. After HVPE growth, the branch porous structures formed by electrochemical etching were transformed into small and isolated voids, whereas the inverted pyramid porous structures formed by two-step etching were transformed into well-aligned voids 14 . The distinction of the deformation morphology comes from the difference of porosity and pore size.…”

Section: Resultsmentioning

confidence: 99%

“…Etching the GaN/sapphire templates is a frequently used way to fabricate the buffer layer. The wet chemical etching 12 , in situ etching 13 , electrochemical etching 14 and the reactive ion etching (RIE) 15 methods have been reported. Nanomaterials have been also applied in the HVPE process of GaN growth.…”

Section: Introductionmentioning

confidence: 99%

High quality self-separated GaN crystal grown on a novel nanoporous template by HVPE

Huo

Shao

et al. 2018

Sci Rep

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In this study, a novel nanoporous template was obtained by a two-step etching process from MOCVD-GaN/Al2O3 (MGA) with electrochemical etching sequentially followed by chemical wet etching. The twice-etched MOCVD-GaN/Al2O3 (TEMGA) templates were utilized to grow GaN crystals by hydride vapor phase epitaxy (HVPE) method. The GaN crystals were separated spontaneously from the TEMGA template with the assistance of voids formed by the etched nanopores. Several techniques were utilized to characterize the quality of the free-standing GaN crystals obtained from the TEMGA template. Results showed that the quality of the as-obtained GaN crystals was improved obviously compared with those grown on the MGA. This convenient technique can be applied to grow high-quality free-standing GaN crystals.

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“…Here, we propose using NP GaN as a light scattering medium and a host for QDs. Conductivity-based selective electrochemical (EC) etching was carried out to form nanopores in 4.8-μm-thick n-GaN layer (n=5×10 18 cm -3 ) grown on a double side polished sapphire substrate [12][13][14]. Figure 1 shows the SEM images of the NP GaN etched in 0.3M oxalic acid at 22V.…”

Section: New Technology Based On Qd-loaded Np Ganmentioning

confidence: 99%

65‐2: Invited Paper: Enabling Technology for MicroLED Display Based on Quantum Dot Color Converter

Kang

Han

2019

Symp Digest of Tech Papers

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Lift-off of epitaxial GaN by regrowth over nanoporous GaN

Cited by 16 publications

References 17 publications

Optical study of phase-separated thick InGaN layers grown on a compliant substrate

Optical study of phase-separated thick InGaN layers grown on a compliant substrate

High quality self-separated GaN crystal grown on a novel nanoporous template by HVPE

65‐2: Invited Paper: Enabling Technology for MicroLED Display Based on Quantum Dot Color Converter

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