Light, annealing and plasma induced changes on the electrical properties of a-GaSe thin films

Self-Powered Infrared Photodetectors with Ultra-High Speed and Detectivity Based on Amorphous Cu-Based MOF Films

“…As the temperature increases, the film's resistivity decreases, indicating the semiconducting nature of the p-a-Cu-HHTP MOF film. Then, the temperature-dependent conductivity data were fitted using Arrhenius eq 1 33,34…”

“…As the temperature increases, the film’s resistivity decreases, indicating the semiconducting nature of the p-a-Cu-HHTP MOF film. Then, the temperature-dependent conductivity data were fitted using Arrhenius eq , σ = σ 1 exp ( − Δ E 1 k 0 T ) + σ 2 exp ( − Δ E 2 k 0 T ) + σ 3 exp ( − Δ E 3 k 0 T ) where Δ E 1 = E F – E V , Δ E 2 = E F – E B – W 1 , and Δ E 3 = W 2 stand for activation energy; E F , E V , and E B are the Fermi energy, the extended band edge, and the band tail, respectively; W 1 is defined as phonon energy; T denotes temperature; σ 1 , σ 2 , and σ 3 are constants; and k 0 represents the Boltzmann constant. This formula comprises three components: the extended-state conductivity [σ 1 exp(−Δ E 1 / k 0 T )], the tailed-state conductivity [σ 2 exp(−Δ E 2 / k 0 T )], and the short-range hopping conductivity at the Fermi energy [σ 3 exp(−Δ E 3 / k 0 T )].…”