Light Assisted Electro-Metallization in Resistive Switch With Optical Accessibility

Double-Slot Nanophotonic Platform for Optically Accessible Resistive Switching with High Extinction Ratio and High Endurance

“…Consequently, this suggests that the proposed nanophotonic device is well-suited for extended operational cycles, and we believe that the proposed work still holds merit and potential for certain applications where a moderate number of cycles would suffice. The gradual decrease in set voltage during successive set–reset cycles resembles the adaptive weight requirements for neuromorphic computation in AI. , To improve the endurance, we can consider a material with a higher work function, such as gold or platinum, that has shown the possibility of many read/write cycles. But it results in high power consumption as compared to lower work function materials such as Ag.…”

“…Recent advancements in integrated photonics technology have enabled the design of submicron optical waveguiding structures with a strong light–matter interaction and minimal losses on the mature CMOS-based silicon (Si) platform. − Scaling down improves power usage and operating speed but delays in terms of interconnections, which limits the data transport capacity of electronic chips. − Embedded nanophotonic devices over photonic integrated circuits can be implemented with the help of optical waveguides, which meet future requirements for wide bandwidth and high-speed communications. − Resistive memory technology is the future of high-speed computing and information storage, offering low power consumption and diverse applications. − It revolutionizes computing with faster data processing and efficient storage capabilities . Resistive switches are devices consisting of two-terminal, three-layered stacks with a controlling layer separated by two metal electrodes that can alter the resistance state.…”

“…The controlling layer of memristor devices can be made of inorganic or organic material, which can range from semiconducting to insulating. − Resistance changes from a high-resistance state to a low-resistance state are primarily influenced by the formation and annihilation of conductive filaments within the active material between the two electrodes . The formation of conductive filaments (CFs) in resistive switches is controlled by two mechanisms: electrochemical metallization (ECM) and the valency change effect (VCM). − The application of an external electric field causes the diffusion or displacement of ions, which have the capacity to manipulate the light behavior, playing a crucial role in filament formation. , The changes can be detected and recorded by optical signals and utilized in various applications such as modulation, biosensing, ultrafast photodetection optical interconnect, resistive switch, neuromorphic computation, ,,, etc. Additionally, a few of the same functionality devices have been reported based on phase change materials. , Out of all these mechanisms, ECM has proven to be the most direct and efficient change in optical intensity. , The resistive switch typically contains metal–insulator–metal based on a plasmonic structure.…”

An Ultra-Compact Design of Plasmonic Memristor with Low Loss and High Extinction Efficiency Based on Enhanced Interaction between Filament and Concentrated Plasmon

“…Moreover, as this design has a compact size (overall length is 610 nm) much shorter than other structures [10,14,35], the intrinsic propagation loss of the plasmonic taper, positively correlated to its length, is reduced [36], resulting in a quite low loss of typically ~1 dB around 1550 nm (Figure 3f). Although the properties of the device discussed in this work are evaluated based on the simulations, and are perhaps not suitable to directly compare with the experimental reports summarized in Table 1 [10,14,19,20,35,37], the achieved results still imply that introducing the small triangle-shaped metal taper on top of the dielectric waveguide could be a promising design for a plasmonic memristor with superior performances. However, it is noteworthy that at the other important communication window (1.31 µm, O-band), the spectra change induced by the memristive switching is much weaker, and in an even shorter wavelength range, and the transmission spectra of the device at the HR state become very close to that at the LR state (see Figures 3e and 4); hence, in the following, we mainly focus on the 1.55 µm range.…”

The Spectral Response of the Dual Microdisk Resonator Based on BaTiO3 Resistive Random Access Memory

“…However, the jury is still out when concerning which of the aforementioned mechanisms would play an influential role under any typical circumstances [ 25 ]. Electrochemical metallization relies on the diffusion from ions of a metal electrode, such as silver which is widely used in plasmonic memristors to facilitate resistive switching [ 23 , 26 , 27 , 28 ]. On the other hand, the valence change mechanism would have the upper hand on materials that are filled with oxygen-related defects or vacancies, which are instrumental for the formation of the conductive nanofilaments through ions migration.…”