Light-current characteristic of a quantum well laser with asymmetric barrier layers

Using numerical simulation, a search is carried out for designs of asymmetric barrier layers (ABLs) for a laser diode having GaAs waveguide and emitting at the wavelength λ = 980 nm. A pair of ABLs, adjoining the active region on both sides, blocks undesired charge carrier flows and suppresses parasitic spontaneous recombination in the waveguide layers. Optimal designs of ABLs based on AlGaAsSb and GaInP for blocking electrons and holes, respectively, are proposed that make it possible to reduce the parasitic recombination current down to less than 1% of the initial value. To suppress electron transport, an alternative structure based on three identical AlInAs barriers is also proposed. The GaAsP spacers separating these barriers from each other have different thicknesses. Due to this, its own set of quasi-bound (resonant) states is formed in each spacer that is different from the neighbor spacer set of states. As a result of this, the resonant tunneling channels are blocked: the parasitic electron flow is reduced by several tens of times in comparison with the case of spacers of equal thickness.

Section: Introductionunclassified

Конструкции блокирующих слоев для подавления паразитной рекомбинации в мощных диодных лазерах с GaAs волноводом

Muretova¹,

Zubov²,

Асрян

et al. 2022

“…Ранее концепция лазеров с АБС была реализована на практике в AlGaAs/GaAs-лазерах спектрального диапазона 830−850 нм [3,4]. Было обнаружено некоторое улучшение температурных и мощностных характеристик за счет использования АБС, тогда как теоретическая модель, предполагающая полное подавление паразитных потоков, предсказывает кардинальное повышение характеристической температуры порогового тока [5] и выходной оптической мощности [6]. блокирующие барьеры имеют конечную высоту и толщину и соответственно конечную степень подавления.…”

Section: Introductionunclassified

Паразитная Рекомбинация В Лазере С Асимметричными Барьерными Слоями

Зубов¹,

Муретова²,

Паюсов³

et al. 2020

In a laser with asymmetric barrier layers (ABLs) two thin barrier layers adjacent to the active region on both sides are aimed at prevention of bipolar population of the waveguide layers and, accordingly, at suppression of parasitic recombination in them. In the present work, a theoretical model of the laser with ABLs based on rate equations is proposed, which includes unwanted carrier leakage that inevitably occurs in lasers with ABLs implemented in practice. Solutions of the equations for the steady-state mode are obtained. Using an example of a laser based on an InGaAs/GaAs quantum well (lasing wavelength λ = 980 nm) the effect of the leakage through ABLs on device characteristics is studied. The parasitic fluxes suppression ratios C of ABLs that are required for prevention of unwanted impact of waveguide recombination are estimated. For the case under consideration the effect of using ABLs becomes pronounced at the suppression ratios C ≥ 102. To suppress 90% of the parasitic current, C should be equal to 2.3 · 10^4. In the work, we also study the influence of ABLs on the useful fluxes of carriers entering the active region.

“…При этом ввиду малой толщины слои АБ могут быть синтезированы в псевдоморфном режиме даже при некоторой рассогласованности по параметру решетки относительно подложки. В идеальном случае, когда АБ полностью блокируют нежелательный транс-порт, область сосуществования электронов и дырок ограничена активной областью и паразитная рекомби-нация в волноводе отсутствует [10].…”

Section: Introductionunclassified

Подавление Волноводной Рекомбинации За Счет Использования Парных Асимметричных Барьеров В Лазерных Гетероструктурах

Зубов¹,

Максимов²,

Гордеев³

et al. 2018

A semiconductor-laser design is proposed in which parasitic recombination in the waveguide region is suppressed by means of double asymmetric barriers adjacent to the active region. Double asymmetric barriers block the undesirable transport of one type of charge carrier while allowing the transport of the other type of carrier. The spacer in the double asymmetric barrier can serve to compensate the elastic strain introduced by the barrier layers as well as to control the energy spectrum of charge carriers and, thus, the transmission coefficient. By the example of a laser with Al_0.2Ga_0.8As waveguide layers, it is shown that the design with double asymmetric barriers makes it possible to suppress undesirable electron transport by a factor of 4 in comparison to the design using single asymmetric barriers.