Light emission efficiency and dynamics in silicon-rich silicon nitride films

Abstract

Silicon nanocluster-sensitized emission from erbium: The role of stress in the formation of silicon nanoclusters

Polarization strategies to improve the emission of Si-based light sources emitting at 1.55 μm

“…Silicon based light sources have been widely investigated for their implementation in integrated photonic circuits [1][2][3][4][5][6][7][8].…”

Photonic Crystal and Plasmonic Silicon-Based Light Sources

“…This is 19 times faster then the reported lifetime of about 0.5 ns for similar nitride films with 7% efficiency [7]. We can estimate the radiative lifetime of such SRN film to be τ rad = τ measured /η = 7 ns, where η is the radiative emission efficiency.…”

“…We studied light-emitting Si-rich Si nitride (SRN), Si nanocrystals (Si-NCs) embedded in silicon dioxide, and erbium-doped amorphous Si nitride (Er:SiN x ) systems. Both Si-NCs in SiO 2 [1]- [6] and silicon nitride [7]- [10] are well studied and show photoluminescence (PL) with wavelengths from 500 to 1000 nm. In these samples, the emission is enhanced relative to the emission from bulk Si because of electron-hole localization effects due to either quantum confinement or trapping to surface states [11].…”

Stimulated Raman Scattering in Quantum Dots and Nanocomposite Silicon Based Materials

“…A higher magnification of a SRN layer shows the nucleation of amorphous Si nanocrystals marked by the arrows in the inset (panel b). The amorphous Si nanocrystals embedded in the Si nitride layers give rise to strong near-infrared photoluminescence with nanosecond decay dynamics at room temperature, as discussed in details elsewhere (Dal Negro et al, 2006;Dal Negro et al, 2008;Li et al, 2008). Silicon nanocomposities sample was obtained by sol-gel technique.…”