Light emission from rare-earths in dislocation engineered silicon substrates

Lourenço, M. A.; Ludurczak, Willy; Prins, A. D.; Milosavljević, M.; Gwilliam, R.; Homewood, K. P.

doi:10.7567/jjap.54.07jb01

Cited by 3 publications

(6 citation statements)

References 33 publications

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“…The Eu EL reported here shows an enhancement by a factor of 25 over our best previous "classical" RE device (doped with Tm [ 27 ] ) and an enhancement of 900 times over our previous best "classical" RE devices in the 1.3-1.5 µm range (doped with either Tm [ 23 ] or Er [ 20 ] ).…”

Section: +mentioning

confidence: 40%

“…These spectra do not correspond to any known implant damage induced spectra in the literature [ 34 ] and not to spectra associated with the well-known silicon D-line defects [ 35 ] or, as far as we are aware, any previously reported spectra in silicon. In addition, the spectra for Eu, Yb, and Ce are quite different from each other, despite having similar atomic masses, and quite distinct from PL and EL spectra of all other RE we have previously studied [ 27 ] when all implanted at the same doses and with the same thermal processing. These include Sm and Gd, which bracket Eu, and Tm and Pr, which are adjacent to Yb and Ce, respectively, in the lanthanide series.…”

Section: Silicon Band-edge-modifi Ed Rare-earth Luminescencementioning

confidence: 75%

“…The optimum processing conditions to achieve the brightest RE luminescence in silicon is similar for most of the REs and has been discussed in detail in ref. [ 27 ] . The implant energy chosen placed the REs on the p-side of the junction outside the depletion region.…”

Section: Methodsmentioning

confidence: 99%

“…The mechanism for boron enabling and enhancing luminescence has been previously extensively reported for both bulk and RE doped silicon. [ 1,20,23,24,26,27 ] For Eu, Yb, and Ce, distinct main lines can be seen on all the spectra with additional fi ne structure. These spectra do not correspond to any known implant damage induced spectra in the literature [ 34 ] and not to spectra associated with the well-known silicon D-line defects [ 35 ] or, as far as we are aware, any previously reported spectra in silicon.…”

Section: Silicon Band-edge-modifi Ed Rare-earth Luminescencementioning

confidence: 96%

“…Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim and other standard semiconductors behave "conventionally"-emitting at their well-known characteristic internal transition wavelengths. [25][26][27] Here we investigate the incorporation of the RE elements Eu, Yb, and Ce in silicon-REs that have their lowest energy internal transitions above the band gap energy of silicon (1.1 eV). The lowest energy internal transitions of the Eu 3+ are in the red at ≈2 eV, in Yb they are in the near-IR at ≈1.3 eV, and in Ce they are in the UV/blue (3-4 eV).…”

Section: Introductionmentioning

confidence: 99%

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Silicon‐Modified Rare‐Earth Transitions—A New Route to Near‐ and Mid‐IR Photonics

Lourenço

Hughes

Lai

et al. 2016

Adv Funct Materials

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1986 wileyonlinelibrary.com devices using alternative direct band gap semiconductors. This hybridization is highly undesirable, seriously violating the paramount technological and cost advantages inherent in silicon integration that has driven its exponential growth. The ultimate vision of silicon integration is a totally single silicon solution incorporating both electronic and photonic functions. Here we report a novel phenomenon-siliconmodifi ed rare-earth (RE) transitions-and demonstrate light emitting diodes (LEDs) and mid-IR photodetectors. Universally, luminescence from RE-doped semiconductors has shown only the expected characteristic intrinsic transitions; consequently emission from REs with transitions greater than the semiconductor band gap energy should not occur. Europium, ytterbium, and cerium have their lowest energy transitions well above the band gap energy of silicon. Remarkably, we see photoluminescence (PL) and electroluminescence (EL) due to Eu, Yb, and Ce in silicon but dramatically redshifted in wavelength and strikingly enhanced in intensity by up to 900 times compared with conventional RE-doped silicon LEDs. These results refute previous thinking on the interaction of REs with semiconductors and offer a promising route to effi cient, fully silicon-based, optoelectronic devices across the near-and mid-IR.Silicon photonics has seen rapid advances [1][2][3][4][5][6][7][8][9][10][11][12] and the technology is seen not just as required for next-generation computers but also as a vehicle for a wide range of other high value and important, societal, environmental, security, and health applications, such as greenhouse gas and explosive residue sensing, and fast medical diagnostics. [ 13 ] REs elements in silicon have long been considered promising for optical sources, and more recently for quantum technologies. [ 14 ] The partially fi lled inner 4 f -shell gives sharp internal transitions highly insensitive to crystal host and temperature and many of the transitions have intrinsic gain and support lasing. However, because the transitions are internal to the RE they have not been seen so far as a particularly promising route to photodetectors.Light emission at 1.54 µm due to Er ions in III-V and Si has been extensively investigated and light emitting devices successfully demonstrated although with limited effi ciency. [15][16][17][18][19][20][21] PL and EL from silicon and III-V semiconductors incorporating the RE thulium have also been achieved-transitions between the Tm 3+ lowest excited states and the ground state lead to emissions around 0.8, 1.2, and 2 µm. [22][23][24] Both Er and Tm in silicon, and indeed all others RE reported in silicon Silicon-Modifi ed Rare-Earth Transitions-A New Route to Near-and Mid-IR Photonics Manon A. Lourenço , * Mark A. Hughes , Khue T. Lai , Imran M. Sofi , Willy Ludurczak , Lewis Wong , Russell M. Gwilliam , and Kevin P. Homewood Silicon underpins microelectronics but lacks the photonic capability needed for next-generation systems and currently relies on ...

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Section: +mentioning

confidence: 40%

Section: Silicon Band-edge-modifi Ed Rare-earth Luminescencementioning

confidence: 75%

Section: Methodsmentioning

confidence: 99%

Section: Silicon Band-edge-modifi Ed Rare-earth Luminescencementioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Silicon‐Modified Rare‐Earth Transitions—A New Route to Near‐ and Mid‐IR Photonics

Lourenço

Hughes

Lai

et al. 2016

Adv Funct Materials

Self Cite

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Super-enhancement of 1.54 μm emission from erbium codoped with oxygen in silicon-on-insulator

Lourenço

Milošević

Gorin

et al. 2016

Sci Rep

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We report on the super enhancement of the 1.54 μm Er emission in erbium doped silicon-on-insulator when codoped with oxygen at a ratio of 1:1. This is attributed to a more favourable crystal field splitting in the substitutional tetrahedral site favoured for the singly coordinated case. The results on these carefully matched implant profiles show that optical response is highly determined by the amount and ratio of erbium and oxygen present in the sample and ratios of O:Er greater than unity are severely detrimental to the Er emission. The most efficient luminescence is forty times higher than in silicon-on-insulator implanted with Er only. This super enhancement now offers a realistic route not only for optical communication applications but also for the implementation of silicon photonic integrated circuits for sensing, biomedical instrumentation and quantum communication.

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Role of Boron in Assisting the Super-Enhancement of Emissions from Carbon-Implanted Silicon

et al. 2023

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The super enhancement of silicon band edge luminescence when co-implanted with boron and carbon is reported. The role of boron in the band edge emissions in silicon was investigated by deliberately introducing defects into the lattice structures. We aimed to increase the light emission intensity from silicon by boron implantation, leading to the formation of dislocation loops between the lattice structures. The silicon samples were doped with a high concentration of carbon before boron implantation and then annealed at a high temperature to activate the dopants into substitutional lattice sites. Photoluminescence (PL) measurements were performed to observe the emissions at the near-infrared region. The temperatures were varied from 10 K to 100 K to study the effect of temperature on the peak luminescence intensity. Two main peaks could be seen at ~1112 and 1170 nm by observing the PL spectra. The intensities shown by both peaks in the samples incorporated with boron are significantly higher than those in pristine silicon samples, and the highest intensity in the former was 600 times greater than that in the latter. Transmission electron microscopy (TEM) was used to study the structure of post-implant and post-anneal silicon sample. The dislocation loops were observed in the sample. Through a technique compatible with mature silicon processing technology, the results of this study will greatly contribute to the development of all Si-based photonic systems and quantum technologies.

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Light emission from rare-earths in dislocation engineered silicon substrates

Cited by 3 publications

References 33 publications

Silicon‐Modified Rare‐Earth Transitions—A New Route to Near‐ and Mid‐IR Photonics

Silicon‐Modified Rare‐Earth Transitions—A New Route to Near‐ and Mid‐IR Photonics

Super-enhancement of 1.54 μm emission from erbium codoped with oxygen in silicon-on-insulator

Role of Boron in Assisting the Super-Enhancement of Emissions from Carbon-Implanted Silicon

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