Light Emission of a CdS(Cu)/CdS Thin-Film Diode

Abe, Takashi; Sato, Jun; Ohashi, Shintaro; Watanabe, M.; Kashiwaba, Y.

doi:10.1002/1521-3951(200201)229:2<1015::aid-pssb1015>3.0.co;2-3

Cited by 18 publications

(5 citation statements)

References 4 publications

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“…The diffraction peak (2 = 15.99 °) is due to the re ection in the cubic phase. The indexing is well matched with the JCPDS le (96-101-0921)[13]. This indicates that the CuS thin lm has a crystalline structure with a preferential orientation along the (200) direction.…”

supporting

confidence: 66%

SILAR-Based Synthesis of Cd-Doped CuS Nanocrystalline Thin Films and their Photocatalytic Activity

Bhosle

Nimbalkar²,

Jare

et al. 2023

Preprint

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The Successive Ionic Layer Adsorption and Reaction (SILAR) approach was used to fabricate Cd doped CuS nanocrystalline thin films. On the optical, structural, morphological, and electronic properties of Cd doped CuS films, the influence of a 3% Cd doping concentration was investigated. The cubic phase crystal structure of the Cd doped CuS thin was revealed by XRD measurements to be polycrystalline. The bonding of the CuS semiconductor material was verified by FTIR spectra, which also displayed the emission bands of the films. The surface morphology of the produced films changes with the concentration of Cd doping, according to the FESEM data. In the UV visible spectroscopy, a blue shift in the optical band gap was identified. Under the irradiation of sunshine, the photocatalytic activity of Rhodamine B was investigated. The degradation efficiency increased nearly 97% as Cd concentration increased.

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supporting

confidence: 66%

SILAR-Based Synthesis of Cd-Doped CuS Nanocrystalline Thin Films and their Photocatalytic Activity

Bhosle

Nimbalkar²,

Jare

et al. 2023

Preprint

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“…It has been reported that Cu + and Cu 2+ are the ionic states found in Cd 2+ sites into the CdS lattice, in bulk and in thin films. 2,4,9,10 If this is the case, when Cu + enters as substitute of Cd 2+ , for each two Cu + ions a S 2− vacancy would be needed for charge balancing purposes. 22 This could be one of the reasons for the decreasing of the S concentration in Table I.…”

Section: Resultsmentioning

confidence: 99%

“…Cu-doped II-VI semiconductor compounds have been the subject of intense research. [1][2][3][4][5][6][7][8] Cu-doped II-VI compounds are useful in the design of solar cells, 5 optical fibers, 7 electroluminescent structures, 8 diodes, 9 etc. CdS:Cu single crystals, 1,2,4 powders, 3,10 and thin films prepared by different methods 6,[9][10][11][12][13] have been employed in the characterization of this material.…”

mentioning

confidence: 99%

“…[1][2][3][4][5][6][7][8] Cu-doped II-VI compounds are useful in the design of solar cells, 5 optical fibers, 7 electroluminescent structures, 8 diodes, 9 etc. CdS:Cu single crystals, 1,2,4 powders, 3,10 and thin films prepared by different methods 6,[9][10][11][12][13] have been employed in the characterization of this material. Specifically, CdS:Cu has been used in solar cells, 14 photomemories, 15 and light emitting diodes fabrication.…”

mentioning

confidence: 99%

“…Specifically, CdS:Cu has been used in solar cells, 14 photomemories, 15 and light emitting diodes fabrication. 16 Some growth techniques used to grow the films are thermal evaporation, 6,9 e-beam evaporation, 11 spray pyrolysis, 12 dipping plus diffusion, 13 and chemical bath. 17 Copper is usually incorporated substitutionally into CdS as Cu 2+ in Cd 2+ sites; 4 however, Cu + and Cu 3+ ionization states 2,18 are also observed.…”

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confidence: 99%

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Growth of CdS:Cu Nanocrystals by Chemical Synthesis

Portillo-Moreno¹,

Lima-Lima²,

Ramírez-Falcon³

et al. 2006

J. Electrochem. Soc.

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CdS:Cu nanocrystalline films were prepared by chemical bath on glass substrates at a deposition temperature of 80°C. Different Cu-doping levels were obtained by changing the volume of the Cu-reagent-solution into the CdS growing solution. X-ray diffraction ͑XRD͒ and optical absorption ͑OA͒ measurements were carried out to characterize the material. From the XRD patterns it is concluded that grains in undoped films grow in the wurtzite hexagonal phase, and in Cu-doped films they grow in the zinc blende cubic phase. The average grain size, located in the range 14-23 nm, was calculated by employing Scherrer's formula. From OA spectra the forbidden energy bandgap ͑E g ͒ was determined by using the ͑␣h͒ 2 ϰ ͑E g -h͒ relation, where ␣ is the OA-coefficient and h the photon energy. Due to the doping, E g shifts to lower values depending on the impurity level of the film. Furthermore, the dependence of E g with radius size and interplanar distances of the lattice is discussed. Gibbs free energy calculation for the Cu doping CdS process is also included.

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Characterizations of undoped and Cu doped CdS thin films using photothermal and other techniques

Paulraj

Ramkumar²,

Varkey³

et al. 2005

Physica Status Solidi (a)

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Photothermal Deflection Spectroscopy (PDS) technique was used to study undoped and copper (Cu) doped cadmium sulphide (CdS) thin films. Variation in grain size and lattice strain due to Cu doping were analysed using X‐ray diffraction (XRD). Changes in mobility of carriers in CdS with Cu concentration was studied using PDS technique for the first time and results are compared with the earlier ones. Thickness of Cu diffused region in CdS was also calculated and compared with results from X‐Ray Photoelectron Spectroscopy (XPS) and Ellipsometry. Results from PDS technique are found to be agreeing with those from other experiments. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Light Emission of a CdS(Cu)/CdS Thin-Film Diode

Cited by 18 publications

References 4 publications

SILAR-Based Synthesis of Cd-Doped CuS Nanocrystalline Thin Films and their Photocatalytic Activity

SILAR-Based Synthesis of Cd-Doped CuS Nanocrystalline Thin Films and their Photocatalytic Activity

Growth of CdS:Cu Nanocrystals by Chemical Synthesis

Characterizations of undoped and Cu doped CdS thin films using photothermal and other techniques

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