Light-field-driven electronics in the mid-infrared regime: Schottky rectification

Abstract

The speed of an active electronic semiconductor device is limited by RC timescale, i.e., the time required for its charging and discharging. To circumvent this ubiquitous limitation of conventional electronics, we investigate diodes under intense mid-infrared light-field pulses. We choose epitaxial graphene on silicon carbide as a metal/semiconductor pair, acting as an ultrarobust and almost-transparent Schottky diode. The usually dominant forward direction is suppressed, but a characteristic signal occurs in reverse bias. For its theoretical description, we consider tunneling through the light-field–modulated Schottky barrier, complemented by a dynamical accumulation correction. On the basis only of the DC parametrization of the diode, the model provides a consistent and accurate description of the experimentally observed infrared phenomena. This allows the conclusion that cycle-by-cycle dynamics determines rectification. As the chosen materials have proven capabilities for transistors, circuits, and even a full logic, we see a way to establish light-field-driven electronics with rapidly increasing functionality.

Lightwave Electronics: Attosecond Optical Switching

“…27, 28 The photoinduced current is generated due to the injection of electrons from the valence band to the conduction band of the material and enables a switching with a few femtoseconds speed based on controlling the CEP of the pump pulse. 27,28 This approach has been used to develop ultrafast light wave-based electronics 21,29,30 utilized for sampling the light field of ultrafast laser pulses by tracing the detected current in real time. 29,31−36 Moreover, an on-chip light field sampling optoelectronics was established based on inducing photoemission current from resonant nanoantennas.…”

“…Moreover, a few-cycle (carrier-envelope phase (CEP)-controlled) laser pulse has been used to induce and control light-induced current in dielectric and nanocircuit. , The photoinduced current is generated due to the injection of electrons from the valence band to the conduction band of the material and enables a switching with a few femtoseconds speed based on controlling the CEP of the pump pulse. , This approach has been used to develop ultrafast light wave-based electronics ,, utilized for sampling the light field of ultrafast laser pulses by tracing the detected current in real time. ,− Moreover, an on-chip light field sampling optoelectronics was established based on inducing photoemission current from resonant nanoantennas. ,, In addition, light-based electronics using ultrafast terahertz waveform has been demonstrated , extending this capability to new spectral ranges.…”

Engineered charge transfer and reactive site over hierarchical Ti3C2T x MXene@In2S3-NiS toward enhanced photocatalytic H2 evolution

“…The state-of-the-art approach to boost the photocatalytic HER performance is to construct hybrid photocatalysts based on heterostructure [10,11]. In particular, some two-dimensional materials with metallic properties (high power function), such as graphene [12,13], MXene [14][15][16], and graphdiyne [17,18], can effectively promote the separation of photocarriers by the Schottky effect. In addition, the large specific surface area and abundant nucleation sites of two-dimensional materials can serve as an excellent growth platform for semiconductor hierarchical structures, thus achieving the regulation of semiconductor-rich nanostructures and improving the specific surface area to expose more reactive sites and promote H + mass transfer.…”