Light-Harvesting Self-Powered Monolithic-Structure Temperature Sensing Based on 3C-SiC/Si Heterostructure

Abstract

Utilizing harvesting energy to power sensors has been becoming more critical in the current age of the Internet of Things. In this paper, we propose a novel technology using a monolithic 3C-SiC/Si heterostructure to harvest photon energy to power itself and simultaneously sense the surrounding temperature. The 3C-SiC/Si heterostructure converts photon energy into electrical energy, which is manifested as a lateral photovoltage across the top material layer of the heterostructure. Simultaneously, the lateral photovoltage varies with the surrounding temperature, and this photovoltage variation with temperature is used to monitor the temperature. We characterized the thermoresistive properties of the 3C-SiC/Si heterostructure, evaluated its energy conversion, and investigated its performance as a light-harvesting self-powered temperature sensor. The resistance of the heterostructure gradually drops with increasing temperature with a temperature coefficient of resistance (TCR) ranging from more than −3500 to approximately −8200 ppm/K. The generated lateral photovoltage is as high as 58.8 mV under 12 700 lx light illumination at 25 °C. The sensitivity of the sensor in the self-power mode is as high as 360 μV·K–1 and 330 μV·K–1 under illumination of 12 700 lx and 7400 lx lights, respectively. The sensor harvests photon energy to power itself and measure temperatures as high as 300 °C, which is impressive for semiconductor-based sensor. The proposed technology opens new avenues for energy harvesting self-powered temperature sensors.

Lateral Thermo-magneto-optoelectronic Effects in a 3C-SiC Nanothin Film on the Si Heterojunction

“…Here, the difference in electron concentrations between the two electrodes is not substantial, resulting in reduction of both the LPV and the sensitivity of the device. Furthermore, the LPV influenced by temperature is also described by ; it is evident that with an increase in the temperature, the LPV decreases.…”

Vertical Piezo-Optoelectronic Coupling in a 3C-SiC/Si Heterostructure for Self-Powered and Highly Sensitive Mechanical Sensing

“…For example, mechanical energy can take the form of vibrations created by water tides or turbine rotations produced by winds . Different sensing mechanisms can be applied to collect this kind of energy, such as piezoresistive, piezoelectric, electrostatics, or triboelectric effect. , Thermal energy is also abundant and can be collected by techniques based on the thermoelectric or pyroelectric effect . Using the photovoltaic effect, light energythe most abundant and sustainable sourceis commonly harvested globally. , Second, the sensor configuration can be separated into energy harvesting and sensing elements.…”

“…7,8 Thermal energy is also abundant and can be collected by techniques based on the thermoelectric or pyroelectric effect. 9 Using the photovoltaic effect, light energy�the most abundant and sustainable source�is commonly harvested globally. 10,11 Second, the sensor configuration can be separated into energy harvesting and sensing elements.…”

Photovoltaic Effect-Based Multifunctional Photodetection and Position Sensing Using a 3C-SiC/Si Heterojunction

“…18,19 Thus, cost-effective 3C-SiC/ Si wafers have been manufactured commercially to satisfy the requirements of industry and academia. Then, extensive studies on SiC sensing effects have been conducted, such as piezoresistive effect for mechanical sensors and accelerometers, 20,21 thermoresistive effect for temperature sensors, 17,22 and photovoltaic effect for photodetectors and position sensors. 23−25 Furthermore, SiC/Si heterojunctions own a larger valence band offset compared to homojunctions (∼1.3 eV), exhibiting excellent diode characteristics.…”