Light helicity detector based on 2D magnetic semiconductor CrI3

Abstract

Two-dimensional magnetic semiconductors provide a platform for studying physical phenomena at atomically thin limit, and promise magneto-optoelectronic devices application. Here, we report light helicity detectors based on graphene-CrI3-graphene vdW heterostructures. We investigate the circularly polarized light excited current and reflective magnetic circular dichroism (RMCD) under various magnetic fields in both monolayer and multilayer CrI3 devices. The devices exhibit clear helicity-selective photoresponse behavior determined by the magnetic state of CrI3. We also find abnormal negative photocurrents at higher bias in both monolayer and multilayer CrI3. A possible explanation is proposed for this phenomenon. Our work reveals the interplay between magnetic and optoelectronic properties in CrI3 and paves the way to developing spin-optoelectronic devices.

Review on data-centric brain-inspired computing paradigms exploiting emerging memory devices

“…In addition, various inorganics with unique advantages are not being ignored (i.e. metal oxides (Hu et al, 2018;Gao et al, 2022), sulfur compounds (Knoll et al, 2013;Lu and Seabaugh, 2014;, and halogenated compounds (Cheng et al, 2021)) in many applications. Another way is according to different dimensional orientation; the materials can be classified as 0D, 1D, and 2D.…”

“…(B) 1D functional materials: NWs, CNTs, and long-chain polymer (Zhitenev et al, 2007;Kim et al, 2015b;Milano et al, 2018a); and (E) 1D devices: ZnO memristor (Milano et al, 2018a), CNT FET (Kim et al, 2015b), and PAm-PAAc flexible brush (Zhitenev et al, 2007). (C) 2D materials: h-BN, halogenated compounds, and metal oxide (Hu et al, 2018;Shi et al, 2018;Cheng et al, 2021). (F) 2D devices: h-BN memristor (Shi et al, 2018), CrI 3 light helicity detector (Cheng et al, 2021), HfO x memristor (Hu et al, 2018), and TaO y /HfO x memrsitor (Gao et al, 2022).…”

“…(C) 2D materials: h-BN, halogenated compounds, and metal oxide (Hu et al, 2018;Shi et al, 2018;Cheng et al, 2021). (F) 2D devices: h-BN memristor (Shi et al, 2018), CrI 3 light helicity detector (Cheng et al, 2021), HfO x memristor (Hu et al, 2018), and TaO y /HfO x memrsitor (Gao et al, 2022). All images in the diagram are adapted from the corresponding references.…”

Spin Ordering Induced Broadband Photodetection Based on Two‐Dimensional Magnetic Semiconductor α‐MnSe

“…Recently, a series of studies involving magneto‐optical and magneto‐electrical were reported, such as helical luminescence in monolayer CrI 3 with helicity determined by underlying magnetic order; [ 4 ] magnetic‐controlled anisotropic Raman scattering; [ 5 ] tunneling magnetoresistance related to layer‐by‐layer antiferromagnetic ordering, [ 6 ] metamagnetic transition, [ 7 ] and multiple transitions to different magnetic states; [ 8 ] controlling magnetism by electrostatic doping; [ 9 ] and light helicity detector with helicity‐selective photoresponse determined by magnetic state; [ 10 ] confirming that magnetic property and optical/electrical properties of 2D CrI 3 interact and influence each other. These research progress suggested 2D magnetic semiconductors provide an excellent platform for exploring light–matter interactions and studying magneto‐optical and magneto‐electrical phenomena in 2D limit, and further emphasized that understanding the coupling mechanism between optoelectronic properties and magnetic property is of great significance to develop spin‐optoelectronic devices and multifunctional optoelectronic devices.…”

2D Magnetic Fe0.75Ta0.5S2: Giant Exchange Bias with Broadband Photoresponse

“…For further studies of 2D magnetic materials and advances their applications, exploring the interplay between magnetic and optoelectronic properties and developing spin-optoelectronic devices are promising research strategies. [13] Thus, it is urgent to explore novel 2D materials that combine good broadband photo-responses with interesting magnetic structures. The ternary transition metal chalcogenides (TTMCs) formed by introducing 3d transition metal elements such as Fe, or Co, into the typical transition metal chalcogenides of (Nb, Ta) (S, Se, Te) 2 , represent an emergent class of layered materials to yield a plethora of different kinds of physical properties, [11,12,[14][15][16] especially diverse magnetic orders including chiral-helical magnetism, spin glass state, FM, and AFM state.…”