Light-induced defect studies in hydrogenated amorphous silicon by exoelectron emission

Bhide, Rajesh; Manorama, V.; Pawar, S. K.; Babras, Suvarna; Bhoraskar, S. V.; Bhide, V. G.

doi:10.1063/1.103342

Cited by 6 publications

(1 citation statement)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…13 Surface oxidation of the HCl-etched and the PTFE-sputtered GaAs(100) surfaces under atmospheric conditions.-Restraint of surface oxidation of the GaAs compound is of great importance to the application of GaAs in microelectronics, electro-optical devices, and even as the electrodes, since both the As oxides and Ga oxides are unstable under ambient conditions. 23 Figure 3 shows the respective As 3d and Ga 3d core-level spectra of the pristine GaAs surface ͑part a͒, and the HCl-etched GaAs͑100͒ surfaces after exposure to ambient air (ϳ25°C and 65% RH͒ for about 0.1 h ͑time required to transfer the sample to the XPS chamber, part b͒, 2 h ͑part c͒, 50 h ͑part d͒, and 220 h ͑part e͒. The As 3d core-level spectrum of the pristine GaAs surface ͑Fig.…”

Section: Resultsmentioning

confidence: 99%

Surface Passivation of (100)-Oriented GaAs with Ultrathin Fluoropolymer Films Deposited by Radio Frequency Magnetron Sputtering of Poly(tetrafluoroethylene)

Zhang¹,

Kang²,

Neoh³

et al. 2003

J. Electrochem. Soc.

View full text Add to dashboard Cite

Ultrathin fluoropolymer films of about 4 nm in thickness were deposited on the HCl-etched ͑100͒-oriented GaAs single-crystal substrates via radio frequency plasma sputtering of a poly͑tetrafluoroethylene͒ ͑PTFE͒ target. X-ray photoelectron spectroscopy ͑XPS͒ results indicated that the sputter-deposited PTFE ͑s-PTFE͒ ultrathin film, having a dielectric constant comparable to that of the PTFE film ( ϳ 2.1), could effectively passivate the HCl-etched GaAs͑100͒ substrate under various environments. The growth of the oxide layer was effectively hindered by the s-PTFE barrier when the HCl-etched GaAs͑100͒ surface was exposured to air for several hundred hours. The surface oxidation rate was also reduced significantly in the presence of the s-PTFE barrier when the HCl-etched GaAs͑100͒ was exposed to water and the H 2 O 2 solution. XPS and time-of-flight secondary mass spectrometry results indicated that the deposited s-PTFE film was oxygen-free and consisted of -(CF 2 ) n -units with different end groups. The 180°peel adhesion test results suggested that the s-PTFE film adhered strongly to the GaAs͑100͒ surface.

show abstract

Section: Resultsmentioning

confidence: 99%

Surface Passivation of (100)-Oriented GaAs with Ultrathin Fluoropolymer Films Deposited by Radio Frequency Magnetron Sputtering of Poly(tetrafluoroethylene)

Zhang¹,

Kang²,

Neoh³

et al. 2003

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

Electron exo-emission study of PECVD and thermal CVD silicon rich silicon oxide

Dusane¹,

Bhave²,

Hullavard³

et al. 1999

Solid State Communications

View full text Add to dashboard Cite

Field electron emission from hydrogenated amorphous silicon films on tungsten: Light-induced effects

Joag

Sharma

et al. 1994

Applied Physics Letters

View full text Add to dashboard Cite

Field electron emission from a hydrogenated amorphous silicon deposited tungsten tip has been studied. The effect of prolonged (hourly) exposure to light on the field electron emission current has been investigated. The current-voltage characteristics of the as-deposited, light exposed, and annealed states of the emitter showed semiconducting behavior in accordance with the Fowler–Nordheim law. In case of an initially annealed emitter tip, the field emission current was found to increase monotonically with the light exposure, reversibly for shorter durations of a few minutes. The effect of long term (hourly) exposure of light resulted in the increase in the field emission current level nonlinearly with the exposure time. The current level did not come down to the original level even after switching off the light in contrast to the effect of short duration light exposure. The enhancement in the field emission current has been attributed to tunneling though the dangling bond states created by light exposure. The results have been discussed in light of the Staebler–Wronski effect.

show abstract

Light-induced defect studies in hydrogenated amorphous silicon by exoelectron emission

Abstract: Origin of saturated lightinduced defect density in hydrogenated amorphous silicon

Cited by 6 publications

References 23 publications

Surface Passivation of (100)-Oriented GaAs with Ultrathin Fluoropolymer Films Deposited by Radio Frequency Magnetron Sputtering of Poly(tetrafluoroethylene)

Surface Passivation of (100)-Oriented GaAs with Ultrathin Fluoropolymer Films Deposited by Radio Frequency Magnetron Sputtering of Poly(tetrafluoroethylene)

Electron exo-emission study of PECVD and thermal CVD silicon rich silicon oxide

Field electron emission from hydrogenated amorphous silicon films on tungsten: Light-induced effects

Contact Info

Product

Resources

About