Light modulation of magnetization switching in PMN-PT/Ni heterostructure

Abstract

The (011) Pb (Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT)/Ni heterostructure was prepared, and the influence of light on magnetization reversal behaviors of the Ni layer was investigated. We found that the ferroelectric domain of the PMN-PT substrate was tuned by a photostrictive effect, and it further changes the magnetization state of the adjacent Ni layer. Additionally, with electric field polarization, the PMN-PT/Ni heterostructure exhibits controllable magnetization switching behaviors under the application of a proper light intensity. It provides a reliable way to manipulate the magnetization switching process, which is promising for the design and implementation of low power memory and spintronic devices.

Non-volatile optical switch of resistance in photoferroelectric tunnel junctions

“…Exclusive phenomena related to the presence of ferroelectric polarization and its interaction with light, such as large photostriction 17 and the electric control of photovoltaic response 18 , have attracted interest. For instance, photostriction in ferroelectric/magnetic heterostructures has been used to change magnetic properties by light 19 , 20 and memory cells based on electrically controlled and polarization-dependent photoconductance have been designed 21 – 23 . Among them the optical control of polarization, namely, optical polarization switching, would be of the highest interest to achieve the fast control of resistance in memristive components based on ferroelectric materials 16 .…”

Visible Light Effects on Photostrictive/Magnetostrictive PMN‐PT/Ni Heterostructure

“…The crystallographic axis refers to the structural order of the FE substrate. Similar setups are reported in literature with the illumination either on the backside electrode [39] or on the side. [47] Polar measurements showed an in-plane almost isotropic behavior as shown in (Figure S1, Supporting Information), with a coercive field H C of around 19 Oe width along the [100] axis and 23 Oe along the [010] one.…”

“…[34,37] BPVE directly depends on the refractive index and hence on the band gap energy of FE substrates. [38] In MF heterostructures, light-induced FE strain modulation proved to be an effective way for tailoring the FM interfacial properties, [15,[39][40][41][42][43][44] not being affected by aging and fatigue processes typical of voltage controlled FE polarization switching. [45] In 2016, Iurchuk et al [15] reported the optical writing and electrical erasing of the magnetic state for hybrid Au/BFO/Ni structure under the 404 nm laser illumination, with a up to 75% change in coercive field of Ni under irradiation.…”

“…Concerning PMN‐PT/FM heterostructures, very few reports are present at the moment and all characterizations are based on magnetometric and electric measurements. Recently, Zuo et al showed that UV illumination on PMN‐0.3PT (011) induces changes on interfacial Ni magnetic properties, [ 39 ] reversibly switching from easy to hard axis in all FE polarization states.…”

“…In MF heterostructures, light‐induced FE strain modulation proved to be an effective way for tailoring the FM interfacial properties, [ 15,39–44 ] not being affected by aging and fatigue processes typical of voltage controlled FE polarization switching. [ 45 ] In 2016, Iurchuk et al.…”