Light Output Enhancement of Near UV-LED by Using Ti-Doped ITO Transparent Conducting Layer

Lin, Y.H.; Liu, Y S; Liu, C Y

doi:10.1109/lpt.2010.2056363

Cited by 18 publications

(10 citation statements)

References 11 publications

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“…However, ITO is not the best choice for UV LEDs because the transmittance of ITO drops sharply in the ultraviolet region due to its narrow optical band gap [5]. Different methods were reported to solve this problem, such as metal-doped ITO [6,7,8], fluorine-doped ITO [5], and ITO/metal/ITO multilayers [9,10]. Although a transmittance of more than 90% has been achieved at wavelengths above 380 nm, the light absorption of ITO in the deep ultraviolet region is still severe.…”

Section: Introductionmentioning

confidence: 99%

Electrical and Optical Properties of a Transparent Conductive ITO/Ga2O3/Ag/Ga2O3 Multilayer for Ultraviolet Light-Emitting Diodes

Liang

Zhou

et al. 2019

Nanomaterials

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We fabricated an indium tin oxide (ITO)/Ga2O3/Ag/Ga2O3 multilayer as a transparent conductive electrode for ultraviolet light-emitting diodes (UV LEDs). The electrical and optical properties of the multilayer were improved by optimizing the annealing temperature of the ITO contact layer and the whole ITO/Ga2O3/Ag/Ga2O3 multilayer, and the thickness of the ITO contact layer and Ag metal layer. After optimization, the sheet resistance and transmittance of the ITO/Ga2O3/Ag/Ga2O3 multilayer was 3.43 Ω/sq and 86.4% at 335 nm, respectively. The ITO/Ga2O3/Ag/Ga2O3 multilayer also exhibited a good ohmic contact characteristic with a specific contact resistance of 1.45×10−3 Ω·cm2. These results show that the proposed ITO/Ga2O3/Ag/Ga2O3 multilayer is a promising alternative as a p-type electrode for UV LEDs.

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Section: Introductionmentioning

confidence: 99%

Electrical and Optical Properties of a Transparent Conductive ITO/Ga2O3/Ag/Ga2O3 Multilayer for Ultraviolet Light-Emitting Diodes

Liang

Zhou

et al. 2019

Nanomaterials

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“…The sample 4 has a reduction in sheet resistance compared to the 47 nm ITO sample. The transmittance of sample 4 is higher than that of 47 nm ITO and other reported metal-doped ITO [12,13,14,15]. These results reveal that the ITO/Ga 2 O 3 /Ag/Ga 2 O 3 multilayer exhibits an advantage of transmittance at UV range and conductivity.…”

Section: Resultsmentioning

confidence: 57%

“…Previous studies reported that doping metals in ITO would reduce the light absorption in near UV LEDs. The transmittance of ITO at wavelengths above 380 nm can reach about 90% by optimizing the thickness of metal and the annealing temperature [12,13,14,15]. But the transmittance of ITO still decreases rapidly when the wavelength becomes shorter.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of AlGaN-Based UV LEDs with a ITO/Ga2O3/Ag/Ga2O3 Transparent Conductive Electrode

et al. 2019

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We fabricated a complex transparent conductive electrode (TCE) based on Ga2O3 for AlGaN-based ultraviolet light-emitting diodes. The complex TCE consists of a 10 nm ITO, a 15 nm Ga2O3, a 7 nm Ag, and a 15 nm Ga2O3, forming a ITO/Ga2O3/Ag/Ga2O3 multilayer. The metal layer embedded into Ga2O3 and the thin ITO contact layer improves current spreading and electrode contact properties. It is found that the ITO/Ga2O3/Ag/Ga2O3 multilayer can reach a 92.8% transmittance at 365 nm and a specific contact resistance of 10−3 Ω·cm2 with suitable annealing conditions.

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“…The main challenge of developing high-efficiency UV LED chip is to realize the reflective electrode with high reflectivity, good contact and stable operation in 365 nm band. There have been numerous reports on various types of ultraviolet mirrors, including metal mirrors, distributed Bragg reflectors (DBRs), omnidirectional reflectors (ODRs), and tin-doped indium oxide (ITO)/Al reflectors (Lobo et al, 2010;Lin et al, 2010;Takehara et al, 2012;Choi et al, 2013;Nakashima et al, 2013;Chong and Lau, 2014;Kim et al, 2014;Kuo et al, 2015). However, the UV Mirrors reported in the literature still had the problems of low reflectivity in 365 nm band, poor electrical performance in contact with p-AlGaN and bad heat dissipation performance.…”

Section: Introductionmentioning

confidence: 99%

Design and Performance of Ultraviolet 368-nm AlGaN-Based Flip-Chip High-Voltage LEDs with Epitaxial Indium Tin Oxide/Al Reflective Mirror and Symmetry Electrode Arrangement

Wang

Lao

et al. 2022

Front. Mater.

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In this letter, we describe the design and fabrication of high-power AlGaN-based ultraviolet (UV) flip-chip high-voltage light-emitting diodes (LEDs) operating at 368 nm with an epitaxial indium tin oxide (ITO)/Al reflecting mirror and symmetry electrode layout. Metal-organic chemical vapor deposition (MOCVD) was used to grow an ITO thin film as a transparent electrode on the LED surface. At 365 nm, epitaxial ITO thin films exhibited a transmittance of up to 93.6%. Additionally, the epitaxial ITO/Al reflective mirror has a reflectance of 81.2% at 365-nm. To investigate the electrical characteristics, four types of HV-LED micro-cells were constructed with varying n-type mesa structures and p-type interconnect electrodes. We demonstrated a forward voltage (Vf) of 7.86 V at 350 mA with a 2 × 2 mico-cells high-voltage ultraviolet 368-nm flip-chip LED after optimising electrode structure and device process.

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Light Output Enhancement of Near UV-LED by Using Ti-Doped ITO Transparent Conducting Layer

Cited by 18 publications

References 11 publications

Electrical and Optical Properties of a Transparent Conductive ITO/Ga2O3/Ag/Ga2O3 Multilayer for Ultraviolet Light-Emitting Diodes

Electrical and Optical Properties of a Transparent Conductive ITO/Ga2O3/Ag/Ga2O3 Multilayer for Ultraviolet Light-Emitting Diodes

Fabrication and Characterization of AlGaN-Based UV LEDs with a ITO/Ga2O3/Ag/Ga2O3 Transparent Conductive Electrode

Design and Performance of Ultraviolet 368-nm AlGaN-Based Flip-Chip High-Voltage LEDs with Epitaxial Indium Tin Oxide/Al Reflective Mirror and Symmetry Electrode Arrangement

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