1992
DOI: 10.1016/0022-2313(92)90246-6
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Light pulse propagation through ZnSe monocrystals under conditions of excitonic nonlinearity and bistability

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Cited by 8 publications
(7 citation statements)
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“…Though strong optical nonlinearities and large ∆n =−0.08 are known for ZnSe monocrystalline films near the absorption edge at high electron-hole plasma densities [16,17] the similar values for the orange and red spectral range have not been reported to date to the best of the authors' knowledge. In ZnSe monocrystals, fast optical processes and population induced nonlinearities including polaritonic effects, exciton-exciton interaction, plasma screening effects, optical bistability and optical gain have been thoroughly examined in the blue spectral range in the close vicinity of the exciton resonance and the band gap energy [16,17,22,23]. However the population induced nonlinearities in the spectral region well to the red with respect to the band gap transitions have not been examined extensively to date.…”
Section: Discussionmentioning
confidence: 83%
See 1 more Smart Citation
“…Though strong optical nonlinearities and large ∆n =−0.08 are known for ZnSe monocrystalline films near the absorption edge at high electron-hole plasma densities [16,17] the similar values for the orange and red spectral range have not been reported to date to the best of the authors' knowledge. In ZnSe monocrystals, fast optical processes and population induced nonlinearities including polaritonic effects, exciton-exciton interaction, plasma screening effects, optical bistability and optical gain have been thoroughly examined in the blue spectral range in the close vicinity of the exciton resonance and the band gap energy [16,17,22,23]. However the population induced nonlinearities in the spectral region well to the red with respect to the band gap transitions have not been examined extensively to date.…”
Section: Discussionmentioning
confidence: 83%
“…Relative reflection changes exceed 10% at long-wave edge of the main reflection maximum whereas in the range between the ZnSe band gap energy and the main reflection maximum is somewhat smaller. In this range absorption is not negligible and contributes noticeably to formation of reflection spectrum as well as to its modification under condition of optical excitation because of pronounced absorption saturation in this range known for ZnSe single crystals [16,17]. Noteworthy is the difference in modification of reflection spectra in the short-wave and longwave spectral ranges.…”
Section: Nanosecond Time Rangementioning
confidence: 92%
“…The above issues are currently extensively investigated [1][2][3][4]. Among variety of semiconductor materials ZnSe is known as essential component of blue semiconductor lasers and light emitting diodes as well as promising material for optical bistability [5], nonlinear excitonic and polaritonic effects [6,7], wide-band and omnidirectional optical mirrors [8] for the visible, chirp compensators for femtosecond lasers [9]. Recently we have reported [4] on broad-band nonlinear refraction in periodic ZnS/ZnSe heterostructures comprising a Bragg mirror (so called "one dimensional photonic crystal") on a GaAs substrate.…”
Section: Introductionmentioning
confidence: 99%
“…This is a major component for designing semiconductor lasers and light-emitting diodes emitting in the blue region of the spectrum. It also has strong nonlinear optical properties; in particular, coherent phenomena of different orders, exciton and polariton nonlinearity [5,6], and optical bistability [7] are observed in it.…”
Section: Abstract: Multilayer Heterostructures Ultrafast Processesmentioning
confidence: 99%
“…This is a major component for designing semiconductor lasers and light-emitting diodes emitting in the blue region of the spectrum. It also has strong nonlinear optical properties; in particular, coherent phenomena of different orders, exciton and polariton nonlinearity [5,6], and optical bistability [7] are observed in it.With strong laser excitation, a dense nonequilibrium electron-hole (e-h) plasma is formed in semiconductor materials. The major contribution to plasma relaxation processes comes from scattering off charge carriers and polar optical phonons and also intervalley scattering, characterized by fast temporal response.…”
mentioning
confidence: 99%