2011
DOI: 10.1109/led.2010.2086428
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Light Trapping in Single Coaxial Nanowires for Photovoltaic Applications

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Cited by 43 publications
(55 citation statements)
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“…[12][13][14]17,[20][21][22][23][24][25][26][27] For example, absorption or scattering cross sections have been estimated qualitatively, 17,[20][21][22][23] while in other works wavelength-dependent photocurrent measurements performed on single NW PV devices were used to assign quantitatively the resonances of NW optical cavities. [13][14][15] Concurrent with experiments, numerical and analytical calculations of the resonant modes and key optical figures of merit (e.g.…”
mentioning
confidence: 99%
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“…[12][13][14]17,[20][21][22][23][24][25][26][27] For example, absorption or scattering cross sections have been estimated qualitatively, 17,[20][21][22][23] while in other works wavelength-dependent photocurrent measurements performed on single NW PV devices were used to assign quantitatively the resonances of NW optical cavities. [13][14][15] Concurrent with experiments, numerical and analytical calculations of the resonant modes and key optical figures of merit (e.g.…”
mentioning
confidence: 99%
“…absorption efficiency and scattering cross section) for NW optical cavities have been reported. 13,14,20,21,[24][25][26][27] However, systematic studies of design rules for enhancing and tuning light absorption at broad-range wavelengths in NWs and their assembled structures have not been reported. In this study, we address these issues in Si NWs with modulated material compositions and cross-sectional geometries using numerical simulations, and moreover, elucidate the optical properties of single-and multi-layer arrays assembled the NW building blocks.…”
mentioning
confidence: 99%
“…Several strategies-including engineering light absorption in the nanowire [11,12], morphological design [13,14], and multiabsorber patterns [15][16][17]-are well known for enhancing absorption capability of individual nanowires. Alternative approaches to enhance the absorption efficiency, such as light trapping techniques using low-index or metallic nanostructures, also have been widely investigated for their accumulation performance [18,19]. It is worth noting, however, that constructing large-scale and efficient optoelectronic devices should rely on selection of their appropriate nano-building blocks.…”
Section: Introductionmentioning
confidence: 99%
“…In addition to that SiNWs have higher absorption capability, nearly 70 %, which is much greater than that of bulk silicon [12,13]. SiNWs show higher absorption since when the SiNW arrays are placed in orthogonal direction to light absorption and charge separation by fabricating radial p-n junctions, it enables efficient carrier collection and light trapping in optically thick nanowire arrays, even when minority carrier diffusion lengths are shorter than the optical absorption length [14][15][16]. SiNWs arrays also show comparatively low reflection losses than planner semiconductor [14] which definitely leads to higher absorption also.…”
Section: Introductionmentioning
confidence: 99%