Limitations of interface sharpness in a-Si:H/a-SiC:H multilayers

Infrared characterization of interfaces

“…This suggests that the amount of additional H atoms which could be present at the interfaces should be very small. In fact, some authors have estimated this amount to be of the order of 10 cm [3]. This amount is, in our 14 -2 opinion, too small to be detected in our multilayers.…”

“…This interface 1-xx is very common in a-Si:H solar cells where a-Si C :H is used as a window layer because of its wide bandgap, which enhances the spectral response at lower wavelengths [1]. 1-xx The H in a-Si:H/a-Si C :H multilayers has not been extensively studied and, except for a paper from Yoshimoto and Matsunami [2], only casual references to the presence of additional H at the interfaces [3,4] are reported. As far as H bonding is concerned, the identification of the H bonding state is not straightforward due to the overlap of several contributions in the Si-H n stretching band.…”

Carrier Relaxation in a‐Si:H/a‐Sic:H Multilayers Studied by Picosecond Transient Reflectometry

“…On the other hand, the variation of the bilayer thickness changes the total number of probed interfaces. The interface quality and sharpness of a-Si : H/a-Sic : H multilayers usually are limited [9], and thus the additional contribution of internal phenomena like carrier scattering and recombination should be considered. where AT is the change of lattice temperature, and (an/aT) is the thermal modulation should be noted that transient reflectometry directly exposes the sign of refractive index modulation.…”

On the determination of the interface density of states in aSi:H/aSi1−XCX:H multilayers

“…There are several magnitudes, such as the additional hydrogen content at interfaces [1,2] or the density of states (DOS) per interface [3][4][5][6][7] that can be estimated from measurements of series of multilayers with different geometries and number of interfaces.…”