Limited current conduction due to various types of stacking faults in n-type 4H-SiC epilayers

Negatively charged silicon vacancy (VSi−) defects in silicon carbide are expected to be used for magnetic sensors under harsh environments, such as space and underground due to their structural stability and potential for high-fidelity spin manipulation at high temperatures. To realize VSi− based magnetic sensors operating at high temperatures, the temperature dependence of optically detected magnetic resonance (ODMR) in the ground states of VSi− defects, which is the basic principle of magnetic sensing, should be systematically understood. In this work, we demonstrate the potential of VSi− magnetic sensors up to at least 591 K by showing the ODMR spectra with different temperatures. Furthermore, the resonance frequency of the ground level was independent of temperature, indicating the potential for calibration-free magnetic sensors in temperature-varying environments. We also characterize the concentration of VSi− defects formed by electron irradiation and clarify the relationship of magnetic sensing sensitivity to VSi− concentration and find that the sensing sensitivity increases linearly with VSi− concentration up to at least 6.0 × 1016 cm−3. The magnetic sensitivity at a temperature above 549 K was reduced by half as compared to that at 300 K. The results pave the way for the use of a highly sensitive VSi−-based magnetic sensor under harsh environments.

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Optically detected magnetic resonance of silicon vacancies in 4H-SiC at elevated temperatures toward magnetic sensing under harsh environments

Motoki

Sato

Saiki

et al. 2023

Journal of Applied Physics

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Analysis of carrier recombination coefficients of 3C- and 6H-SiC: Insights into recombination mechanisms in stacking faults of 4H-SiC

Tanaka,

Kato

2023

AIP Advances

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In recent years, 4H-SiC power devices have been widely employed in power electronic systems owing to their superior performance to Si power devices. However, stacking faults in 4H-SiC can degrade the device performance. Stacking faults can be considered as polytype inclusions in 4H-SiC. Carrier recombination in stacking faults is considered a cause for performance degradation. Understanding carrier recombination in different polytypes other than 4H-SiC can be helpful in understanding the mechanism of performance degradation due to stacking faults in 4H-SiC. Therefore, in this study, we characterized the recombination coefficients of 3C- and 6H-SiC and compared them with those of 4H-SiC using the time-resolved free-carrier absorption measurement method. Recombination at the stacking faults in 4H-SiC cannot be considered as the intrinsic recombination of inclusions of other polytypes.

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Impacts of single Shockley-type stacking faults on current conduction in 4H-SiC PiN diodes

Asada,

Murata,

Tsuchida

2024

Journal of Applied Physics

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The impacts of single Shockley-type stacking faults (1SSFs) on the electrical characteristics of 4H-SiC PiN diodes were examined by fabricating the PiN diodes containing the 1SSF monolayer in the active area with a covering ratio of unity and evaluating the forward current–voltage (I–V) characteristics at various temperatures from 296 to 523 K. The measured I–V characteristics were compared with the previous results for Schottky barrier diodes (SBDs) containing the 1SSF monolayer. Based on the comparison, we clarified the similarity and differences between the impacts of the 1SSFs on the unipolar and bipolar conductions. The forward current conduction of the PiN diodes is limited by the 1SSF similar to that of the SBDs, while the forward current in the PiN diodes exceeds that in the SBDs at elevated temperatures. The difference was attributed to the contribution of hole and recombination currents, the insights into which were obtained by analyzing several experimental results, including dependences of the forward current on the temperature and thickness of the blocking-voltage layer. A simulation analysis was also conducted by adopting the model proposed in the previous study.

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Limited current conduction due to various types of stacking faults in n-type 4H-SiC epilayers

Cited by 4 publications

References 35 publications

Optically detected magnetic resonance of silicon vacancies in 4H-SiC at elevated temperatures toward magnetic sensing under harsh environments

Optically detected magnetic resonance of silicon vacancies in 4H-SiC at elevated temperatures toward magnetic sensing under harsh environments

Analysis of carrier recombination coefficients of 3C- and 6H-SiC: Insights into recombination mechanisms in stacking faults of 4H-SiC

Impacts of single Shockley-type stacking faults on current conduction in 4H-SiC PiN diodes

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