Line-Edge Roughness Effects on the Electronic Properties of Armchair Black Phosphorene Nanoribbons

Moez, Mahsa; Karamitaheri, Hossein

doi:10.1109/ted.2021.3105368

Cited by 3 publications

(16 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In our previous work, we elucidated a crucial distinction between graphene nanoribbons and black phosphorene nanoribbons concerning line edge roughness. [47] While in graphene nanoribbons, line edge roughness constrains the effective mean free path of charge carriers to a few tens of nanometers, in black phosphorene nanoribbons, mean free paths can extend up to 2 μm in nanoribbons with a width of ≈5 nm. [32,33,[47][48][49] Notably, in the case of armchair phosphorene nanoribbons with widths exceeding 3 nm, the impact of line edge roughness on electron scattering becomes nearly negligible when compared to electron-phonon scattering effects.…”

Section: Introductionmentioning

confidence: 99%

“…[47] While in graphene nanoribbons, line edge roughness constrains the effective mean free path of charge carriers to a few tens of nanometers, in black phosphorene nanoribbons, mean free paths can extend up to 2 μm in nanoribbons with a width of ≈5 nm. [32,33,[47][48][49] Notably, in the case of armchair phosphorene nanoribbons with widths exceeding 3 nm, the impact of line edge roughness on electron scattering becomes nearly negligible when compared to electron-phonon scattering effects. Consequently, in armchair phosphorene nanoribbons, line edge roughness exerts a minimal influence on electrical conductivity and may primarily reduce thermal conductivity.…”

Section: Introductionmentioning

confidence: 99%

“…[33,36,37,[39][40][41][50][51][52][53][54][55][56] Additionally, given that alterations in the width of armchair phosphorene nanoribbons do not significantly impact their energy gap, we show in this paper that these materials could emerge as promising candidates for utilization in thermoelectric applications. [47] In this study, we have conducted a comprehensive investigation into the impact of line edge roughness on the electronic and thermoelectric properties of armchair black phosphorene nanoribbons. The subsequent sections of this article are organized as follows: In Section 2, we detail the computational meth-Table 1.…”

Section: Introductionmentioning

confidence: 99%

“…Black phosphorene tight-binding parameters considering up to the fifth nearest neighbors. [47] No ods employed and provide an overview of the thermoelectric parameters and their relationships. Section 3 is dedicated to presenting the simulation results and engaging in discussions.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Line Edge Roughness Effects on the Thermoelectric Properties of Armchair Black Phosphorene Nanoribbons

Pishevar,

Karamitaheri

2024

Advcd Theory and Sims

Self Cite

View full text Add to dashboard Cite

This study delves into the thermoelectric properties of armchair black phosphorene nanoribbons while considering the presence of line edge roughness. Employing the tight‐binding method in conjunction with non‐equilibrium Green's function techniques and Landauer formulas, the impact of various parameters on thermoelectric performance is explored. These findings reveal that the electrical conductivity and, consequently, the power factor exhibits an increasing trend with expanding ribbon length and width. This behavior can be attributed to heightened collision rates, particularly in narrow ribbons, induced by line edge roughness as length increases. Remarkably, the Seebeck coefficient at the Fermi energy corresponding to the maximum power factor remains nearly constant across different widths, lengths, temperatures, and transport regimes. Furthermore, the thermoelectric figure of merit (ZT) demonstrates a positive correlation with both ribbon length and width. In narrow widths and lengths ≈1000 nm, the power factor and figure of merit exhibit an upward trend with ribbon width. However, with further increases in ribbon width, the influence of line edge roughness on thermal conductivity diminishes. Consequently, the figure of merit decreases due to the rise in thermal conductivity. Notably, the thermoelectric figure of merit is higher for short and narrow ribbons and long and wider ribbons.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Line Edge Roughness Effects on the Thermoelectric Properties of Armchair Black Phosphorene Nanoribbons

Pishevar,

Karamitaheri

2024

Advcd Theory and Sims

Self Cite

View full text Add to dashboard Cite

show abstract

“…They also found that in MoTe 2 and WS 2 , the calculated electron mobilities are abnormally high [7]. On the other hand, the incomparable large surface-to-volume ratio makes property modulations on 2D semiconductors possible and flexible, such as the strain engineering, lateral confinement, surface adsorption, doping, defect, and van der Waals (vdW) integration [1,[8][9][10][11][12][13][14][15]. Among them, the strain engineering is a traditional method and believed as one of the most realistic engineering strategies in industry [16,17].…”

Section: Introductionmentioning

confidence: 99%

Insights into electronic properties of strained two-dimensional semiconductors by out-of-plane bending

Chen

Wang

et al. 2023

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

Strain engineering is an important strategy to modulate the electronic and optical properties of two-dimensional (2D) semiconductors. In experiments, an effective and feasible method to induce strains on 2D semiconductors is the out-of-plane bending. However, in contrast to the in-plane methods, it will generate a combined strain effect on 2D semiconductors, which deserves further explorations. In this work, we theoretically investigate the carrier transport-related electronic properties of arsenene, antimonene, phosphorene, and MoS2 under the out-of-plane bending. The bending effect can be disassembled into the in-plane and out-of-plane rolling strains. We find that the rolling always degrades the transport performance, while the in-plane strain could boost carrier mobilities by restraining the intervalley scattering. In other words, pursuing the maximum in-plane strain at the expense of minimum rolling should be the primary strategy to promote transports in 2D semiconductors through bending. Electrons in 2D semiconductors usually suffer from the serious intervalley scattering caused by optical phonons. The in-plane strain can break the crystal symmetry and separate nonequivalent energy valleys at band edges energetically, confining carrier transports at the Brillouin zone Γ point and eliminating the intervalley scattering. Investigation results show that the arsenene and antimonene are suitable for the bending technology, because of their small layer thicknesses which can relieve the rolling burden. Their electron and hole mobilities can be doubled simultaneously, compared with their unstrained 2D structures. From this study, the rules for the out-of-plane bending technology towards promoting transport abilities in 2D semiconductors are obtained.

show abstract

Zigzag Blue Phosphorene Nanoribbons doped with Si atom for Perfect Spin Filtering, Rectification Behavior and NDR Based Devices

Lei,

Wei,

Lin

et al. 2023

Preprint

View full text Add to dashboard Cite

In this study, we applied Density Functional Theory (DFT) and Nonequilibrium Green’s Function (NEGF) framework to investigate the quantum transport characteristics of Zigzag Blue Phosphorene (ZblueP) nanoribbons doped with Silicon (Si). We aimed to delve into the structural stability, as well as the electronic and transport properties of the device in question. Intriguingly, we discovered that doping strategies can effectively morph a monolayer (ML) of Si-doped ZblueP into a spintronic nanodevice boasting several distinctive transport attributes. Firstly, under certain bias, our model displayed an impressively high dual spin filtering effect (SFE). Secondly, we observed a spin rectifier with a considerable rectifica-tion ratio (RR) of 8.50 x 102. Lastly, we noticed negative differential resistance featuring a peak-to-valley current ratio (PVCR) of 9.65 x 102. Our findings suggest a promising path towards the advancement of high-performing ML ZblueP spintronics technology through Si doping. The results underscore that our model holds substantial potential for utilization in nanoscale spintronic devices.

show abstract

Line-Edge Roughness Effects on the Electronic Properties of Armchair Black Phosphorene Nanoribbons

Cited by 3 publications

References 40 publications

Line Edge Roughness Effects on the Thermoelectric Properties of Armchair Black Phosphorene Nanoribbons

Line Edge Roughness Effects on the Thermoelectric Properties of Armchair Black Phosphorene Nanoribbons

Insights into electronic properties of strained two-dimensional semiconductors by out-of-plane bending

Zigzag Blue Phosphorene Nanoribbons doped with Si atom for Perfect Spin Filtering, Rectification Behavior and NDR Based Devices

Contact Info

Product

Resources

About