BTO/MoS2@CA , with the integration of charge‐enhanced enzymatic activity, pH‐responsive CA release‐mediated H2O2 self‐supply, and GSH depletion, enables out‐of‐balance redox homeostasis, leading to effective tumor ferroptosis. As demonstrated by Yawei Lv, Xin Yu, Jing Liu, Chunying Chen et al. in their Research Article (e202217448), charge is one of the important contributing factors for nanozyme activity, which has not been mentioned previously.

Due to the unique outermost orbitals of Sn, hole carriers in tin monoxide (SnO) possess small effective mass and high mobility among oxide semiconductors, making it a promising p-channel material for thin film field-effect transistors (TFTs). However, the Sn vacancy induced field-effect mobility deterioration and threshold voltage (Vth) shift in experiments greatly limit its application in complementary metal-oxide-semiconductor transistors (CMOS). In this study, the internal mechanism of vacancy defect compensation by aluminium (Al) doping in SnOx film is studied combining experiments with the density functional theory (DFT). The doping is achieved by an argon (Ar) plasma treatment of Al2O3 deposited onto the SnOx film, in which the Al2O3 provides both the surface passivation and Al doping source. Experimental results show a wide Vth modulation range (6.08 to −19.77 V) and notable mobility enhancement (11.56 cm2V-1s-1) in the SnOx TFTs after the Al doping by Ar plasma. DFT results reveal that the most possible positions of Al in SnO and SnO2 segments are the compensation to Sn vacancy and interstitial. The compensation will create an n-type doping effect and improve the hole carrier transport by reducing the hole effective mass (mh*), which is responsible for the device performance variation, while the interstitial in the SnO2 segment can hardly affect the valence transport of the film. The defect compensation is suitable for the electronic property modulation of SnO towards the high-performance CMOS application.

Transparent field‐effect transistors (FETs) are attacking intensive interest for constructing fancy “invisible” electronic products. Presently, the main technology for realizing transparent FETs is based on metal oxide semiconductors, which have wide‐bandgap but generally demand sputtering technique or high‐temperature (>350 °C) solution process for fabrication. Herein, a general device fabrication strategy for metal halide perovskite (MHP) FETs is shown, by which transparent perovskite FETs are successfully obtained using low‐temperature (<150 °C) solution process. This strategy involves the employment of ferroelectric copolymer poly(vinylidene fluoride‐co‐trifluoroethylene) (PVDF‐TrFE) as the dielectric, which conquers the challenging issue of gate‐electric‐field screening effect in MHP FETs. Additionally, an ultra‐thin SnO2 is inserted between the source/drain electrodes and MHPs to facilitate electron injection. Consequently, n‐type semi‐transparent MAPbBr3 FETs and fully transparent MAPbCl3 FETs which can operate well at room temperature with mobility over 10−3 cm2 V−1 s−1 and on/off ratio >103 are achieved for the first time. The low‐temperature solution processability of these FETs makes them particularly attractive for applications in low‐cost, large‐area transparent electronics.

Strain engineering is an important strategy to modulate the electronic and optical properties of two-dimensional (2D) semiconductors. In experiments, an effective and feasible method to induce strains on 2D semiconductors is the out-of-plane bending. However, in contrast to the in-plane methods, it will generate a combined strain effect on 2D semiconductors, which deserves further explorations. In this work, we theoretically investigate the carrier transport-related electronic properties of arsenene, antimonene, phosphorene, and MoS2 under the out-of-plane bending. The bending effect can be disassembled into the in-plane and out-of-plane rolling strains. We find that the rolling always degrades the transport performance, while the in-plane strain could boost carrier mobilities by restraining the intervalley scattering. In other words, pursuing the maximum in-plane strain at the expense of minimum rolling should be the primary strategy to promote transports in 2D semiconductors through bending. Electrons in 2D semiconductors usually suffer from the serious intervalley scattering caused by optical phonons. The in-plane strain can break the crystal symmetry and separate nonequivalent energy valleys at band edges energetically, confining carrier transports at the Brillouin zone Γ point and eliminating the intervalley scattering. Investigation results show that the arsenene and antimonene are suitable for the bending technology, because of their small layer thicknesses which can relieve the rolling burden. Their electron and hole mobilities can be doubled simultaneously, compared with their unstrained 2D structures. From this study, the rules for the out-of-plane bending technology towards promoting transport abilities in 2D semiconductors are obtained.