Linear and non-linear modelling verification of power HBTs

Abstruct4Ieterojunction bipolar transistors (HBT's) with 2700 pm2 of emitter area are characterized for model verification using an active load-pull measurement system. The simulation and measurement results (up to 26 dBm) are reported and compared in terms of output power level and power-added efficiency under variable operating conditions. These measurements are performed with the aim of designing power amplifiers for mobile communications.

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“…+ HBT's model verification can also be obtained from gain compression curves [5]- [7] (the maximum output power was 15 dBm). Figs.…”

Section: Vbe (V)mentioning

confidence: 99%

Model verification for a high-power-efficiency AlGaAs-GaAs HBT

Deshours¹,

Bergeault²,

Berghoff³

et al. 1996

IEEE Microw. Guid. Wave Lett.

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“…Large signal HBT models are therefore needed for the investigation of the electrical as well as thermal transistor function. Up to now large signal HBT models which have been implemented into circuit simulators were based on equivalent circuits like the Gummel-Poon model [1,2] or SPICE-type models [3]. These models use parameters (e.g.…”

Section: Introductionmentioning

confidence: 99%

Physical heterojunction bipolar transistor model for microwave large signal simulation

Schaper

Ahlers

1995

25th European Microwave Conference, 1995

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A new physical large signal HBT model is proposed in this contribution. To our knowledge it is the first time that a physical large signal HBT model is implemented into a circuit simulator. The new HBT model descrbes the transistor action of the intrinsic HBT by an analytic formulation based on physical prnciples. The core of this model comprises emitter, base and oollector layers, the corresponding model parameters are given by material and design data. It is shown that a one dimensional description of the core including an equation for the power balance of the transistor is sufficient to descrbe the self-heating effect in the dc range as well as the junction temperature under large signal conditions. The extrinsic regions of the HBT are modelled by an equivalent circuit with passive elements. The values for these parasitic elements are given by material data and by an extraction method based on measured characterstics.

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Linear and non-linear modelling verification of power HBTs

Cited by 2 publications

References 5 publications

Model verification for a high-power-efficiency AlGaAs-GaAs HBT

Model verification for a high-power-efficiency AlGaAs-GaAs HBT

Physical heterojunction bipolar transistor model for microwave large signal simulation

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