Linear and non-linear optical dispersion parameters of Te81Ge15Bi4 chalcogenide glass thin films for optoelectronic applications

El-Metwally, E.G.; Hegab, N.A.; Mostfa, M.

doi:10.1016/j.physb.2021.413556

Cited by 24 publications

(9 citation statements)

References 65 publications

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“…It can be noticed that the large ( ) c 3 and n 2 values for the investigated GIS-Se and GIS-Te films indicate that these films are best suited for optical switching devices and a variety of non-linear optical potential applications [60]. Moreover, they resemble those examined in the previous publications for comparable chalcogenide glass thin films [27,[61][62][63]. Ticha et al [64] proposed a semiempirical relation between n 2 and E g based on the obtained results for a wide range of chalcogenide glasses as follows:…”

Section: Nonlinear Refractive Index (N 2 )supporting

confidence: 67%

Impact of Se and Te addition on optical characteristics of ternary GeInSb chalcogenide films as promising materials for optoelectronic applications

El-Metwally¹,

Atyia²,

Ismail³

2022

Phys. Scr.

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The present study investigates the linear and non-linear optical characteristics of non-crystalline quaternary Ge15In5Sb5Se75 (GIS-Se) and Ge15In5Sb5Te75 (GIS-Te) chalcogenide thin films. The values of transformation temperatures determined by differential thermal analysis (DTA), such as glass transition T_g and crystallization T_c temperatures, are 524.3 and 639.6 K for GIS-Se and 503.6 and 542.0 K for GIS-Te. The calculated values of glass forming ability (GFA) and thermal stability (H) for GIS-Se are higher than those for GIS-Te. The transmittance T(λ) and reflectance R(λ) spectrophotometric measurements in the UV-vis. wavelength range (400 - 2500 nm) are used to estimate the index of refraction n and extinction coefficient k. Tauc’s extrapolation model was used to determine both Urbach tail (E_U) and optical band gap (E_g^opt) energies. The values of (E_U) are 0.416, 0.526 eV and (E_g^opt) are 1.83, 1.31 eV with indirect allowed transitions for GIS-Se and GIS-Te, respectively. The optical conductivity σ_opt increased as photon energy (hν) increased, and it was enhanced in the presence of Te than Se addition. The analysis of the index of refraction (n) is used to evaluate the dispersion energy E_d, the high frequency dielectric constant ε_∞, the oscillator strength S_0, the lattice dielectric constant ε_L, the ratio N⁄m^* and the optical electronegativity ∅_opt, which were found to be higher in GIS-Te than those in GIS-Se composition. The volume (VELF) and surface (SELF) energy loss functions were found to be increased with increasing (hν) and the presence of Te. Furthermore, the calculated values of nonlinear optical susceptibility χ^((3)) and nonlinear index of refraction n_2 for GIS-Se and GIS-Te are 0.195  10-12, 2.44  10-11 esu and 0.868  10-12, 10.19  10-11 esu, respectively. The detailed outcomes show that the studied film samples are suitable for various optical applications.

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Section: Nonlinear Refractive Index (N 2 )supporting

confidence: 67%

Impact of Se and Te addition on optical characteristics of ternary GeInSb chalcogenide films as promising materials for optoelectronic applications

El-Metwally¹,

Atyia²,

Ismail³

2022

Phys. Scr.

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“…Depending upon the value, it can be considered for efficient use in the optoelectronic field such as capacity communication systems and optical glass fibers. 78 Moreover, depending upon the empirical relation of the Miller rule, 79 the non-linear index of refraction ( n 2 ) was calculated from the static refractive index ( n 0) by the relation . The calculated n 2 values are listed in Table 3.…”

Section: Results Analysis and Discussionmentioning

confidence: 99%

Tuning the nonlinear susceptibility and linear parameters upon annealing Ag_60−xSe₄₀Te_xnanostructured films for nonlinear and photonic applications

Das¹,

Alagarasan

Vardharajaperumal

et al. 2022

Mater. Adv.

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“…The non-linear refractive index n 2 is related to the interaction of the incident light beam with the material specially in case of laser beam with high intensity. Using the obtained values of n av for both indirect and direct band gaps, the linear ( ) c , 1 third order non-linear ( ) c 3 optical susceptibilities and the corresponding non-linear refractive index n 2 can be calculated according to [66,67]:…”

Section: Energy Band Gap-refractive Index Correlations and The Non-li...mentioning

confidence: 99%

Promising naphthol green B dye doped (PVOH-PEG) composite films as a multifunctional material with engineered optical band gap, tunable dielectric properties and nonlinear J–E characteristics

El-Metwally¹,

Mohammed²,

Ismail³

2022

Phys. Scr.

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Polymer composite films of polyvinyl alcohol (PVOH) – polyethylene glycol (PEG) /naphthol green B dye (NGB) were prepared using the solution cast technique with different concentrations of NGB (0 - 25 wt. (%)). XRD emphasized the semi-crystalline nature of the base polymer blend (PVOH-PEG) which increased by NGB addition. FTIR spectra of the investigated samples confirmed the formation of hydrogen bonds between the polymer blend hydroxyl groups and the NGB molecules. Optical properties are studied within wavelengths ranged from 245 nm to 1500 nm. Multi-optical energy band gaps (Eg ) were observed in (PVOH-PEG) doped with NGB dye for the allowed indirect and direct transitions and showed a decrease with the addition of NGB dye. Analysis of the refractive index n offered a normal dispersion within the investigated wavelength region. The dependence of the dielectric constant ε', loss ε'' and ac conductivity σac on frequency (100 Hz - 1 MHz) and NGB content were investigated at room temperature (RT). The addition of NGB tends to increase σac of the (PVOH-PEG) blend, that serve in various semiconductor devices. The values of the frequency exponent s and the charge carriers binding energy WM decrease in the presence of NGB dye and are interpreted by the correlated barrier hopping (CBH) model. Electric modulus formalism clarified the presence of a single relaxation peak with a relaxation time  depends on the NGB wt. (%). The (current density J - electric field E) characteristics were studied at RT and showed a non-ohmic behavior. The current density J increased with the addition of NGB dye and the dc conduction is discussed in view of Schottky-Richardson and Poole–Frenkel theoretical models.

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Linear and non-linear optical dispersion parameters of Te81Ge15Bi4 chalcogenide glass thin films for optoelectronic applications

Cited by 24 publications

References 65 publications

Impact of Se and Te addition on optical characteristics of ternary GeInSb chalcogenide films as promising materials for optoelectronic applications

Impact of Se and Te addition on optical characteristics of ternary GeInSb chalcogenide films as promising materials for optoelectronic applications

Tuning the nonlinear susceptibility and linear parameters upon annealing Ag_60−xSe₄₀Te_xnanostructured films for nonlinear and photonic applications

Promising naphthol green B dye doped (PVOH-PEG) composite films as a multifunctional material with engineered optical band gap, tunable dielectric properties and nonlinear J–E characteristics

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Linear and non-linear optical dispersion parameters of Te81Ge15Bi4 chalcogenide glass thin films for optoelectronic applications

Cited by 24 publications

References 65 publications

Impact of Se and Te addition on optical characteristics of ternary GeInSb chalcogenide films as promising materials for optoelectronic applications

Impact of Se and Te addition on optical characteristics of ternary GeInSb chalcogenide films as promising materials for optoelectronic applications

Tuning the nonlinear susceptibility and linear parameters upon annealing Ag60−xSe40Texnanostructured films for nonlinear and photonic applications

Promising naphthol green B dye doped (PVOH-PEG) composite films as a multifunctional material with engineered optical band gap, tunable dielectric properties and nonlinear J–E characteristics

Contact Info

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Resources

About

Tuning the nonlinear susceptibility and linear parameters upon annealing Ag_60−xSe₄₀Te_xnanostructured films for nonlinear and photonic applications