Linear and Nonlinear Nanophotonic Devices Based on Silicon-on-Insulator Wire Waveguides

Dumon, Pieter; Priem, Gino; Nunes, Luis Romeu; Bogaerts, Wim; Thourhout, Dries Van; Bienstman, Peter; Liang, T.K.; Tsuchiya, Masahiro; Jaenen, Patrick; Beckx, S.; Wouters, Jan; Baets, Roel

doi:10.1143/jjap.45.6589

Cited by 72 publications

(42 citation statements)

References 68 publications

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“…An 80-pm/K resonance shift is estimated based on these simulations. This value is very close to the experimental result reported in an earlier work [3]. The simulations are run for a structure with 720-nm-thick top SiO clad and 220-nm-thick silicon core.…”

Section: Sensor Basicssupporting

confidence: 87%

“…The microring resonator structures are formed by patterning and etching a 220-nm-thick Si top layer on an SOI wafer using 193-nm deep ultraviolet optical lithography in a standard CMOS fabrication process [3], [4]. The waveguide structures are made to have the lateral cross section of 450 nm to achieve a single transverse-electric (TE)-mode operation.…”

Section: Fabricationmentioning

confidence: 99%

“…High index contrast (HIC) silicon-on-insulator (SOI) photonic devices have recently attracted considerable attention because of their ultrahigh compactness and compatibility to complementary metal-oxide-semiconductor (CMOS) fabrication technologies [3], [4]. HIC SOI ring resonators, in particular, are interesting for integrated sensing applications; they can be very small and sensitive [5]- [7].…”

Section: Introductionmentioning

confidence: 99%

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Silicon-on-Insulator (SOI) Ring Resonator-Based Integrated Optical Hydrogen Sensor

Yebo

Taillaert

Roels

et al. 2009

IEEE Photon. Technol. Lett.

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Abstract-We demonstrate a novel, highly sensitive integrated hydrogen sensor based on a silicon ring resonator on the silicon-oninsulator platform. The hydrogen sensitive element in the sensor structure is a platinum-doped tungsten oxide catalytic coating. The catalytic combustion of hydrogen in air leads to a local temperature rise in the ring resonator. The resulting thermo-optic effect shifts the ring resonator resonance. Resonance wavelength shifts higher than a nanometer are measured for hydrogen concentrations below the 4% lower explosion limit. A potentially tunable sensitivity of around 480 pm shift per %H 2 is achieved at an operating temperature of about 40 C.

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Section: Sensor Basicssupporting

confidence: 87%

Section: Fabricationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Silicon-on-Insulator (SOI) Ring Resonator-Based Integrated Optical Hydrogen Sensor

Yebo

Taillaert

Roels

et al. 2009

IEEE Photon. Technol. Lett.

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“…2. Our structures were fabricated by the ePIXfab at IMEC with 193 nm deep UV lithography, so we refer to [1,25] and references therein for a more detailed presentation of similar structures.…”

Section: Nanostructures : Design and Propertiesmentioning

confidence: 99%

Self-pulsing and chaos in short chains of coupled nonlinear microcavities

2009

Self Cite

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Silicon waveguides are promising χ 3 -based photon pair sources. Demonstrations so far have been based on picosecond pulsed lasers. Here, we present the first investigation of photon pair generation in silicon waveguides in a continuous regime. The source is characterized by coincidence measurements. We uncover the presence of unexpected noise which had not been noticed in earlier experiments. Subsequently, we present advances towards integration of the photon pair source with other components on the chip. This is demonstrated by photon pair generation in a Sagnac loop interferometer and inside a micro-ring cavity. Comparison with the straight waveguide shows that these are promising avenues for improving the source. In particular photon pair generation in the micro-ring cavity yields a source with a spectral width of approximately 150 pm resulting in a spectral brightness increased by more than 2 orders of magnitude.

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“…Studying and modeling of optical nonlinear effects in Si including Raman nonlinearity, Kerr effect, two-photon absorption (TPA), free-carrier absorption (FCA) and free-carrier plasma effect has been presented in different papers. [1][2][3][4][5] Taking advantages of nonlinear effects to all-optical switches, channel drop filter and logical circuit design by using of micro-ring resonators has been reported. [6][7][8][9] Nonlinear loss due to FCA is the central problem in silicon devices which operates using nonlinear optical effects.…”

Section: Introductionmentioning

confidence: 99%

Compound FDTD method for silicon photonics

Olyaee

Hamadani

2011

AIP Advances

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Attempt to manufacture photonics devices on silicon requires theoretical and numerical prediction. This essay presents Compound FDTD (C-FDTD) method for comprehensive simulation of silicon photonics devices. Although this method is comprehensive, it maintains conventional Yee algorithm. The method involves variation of refractive index due to nonlinear effects. With the help of this simulator, refractive index change due to free-carriers created through two photon absorption and Kerr effect in silicon waveguide is considered. Results indicate how to choose pump pulse shape to optimum operation of active photonics devices. Also conductivity variation of Si waveguide due to change in free-carrier density is studied. By considering variations in conductivity profile, we are able to design better schemes for sweep free carriers away with reverse bias or nonlinear photovoltaic effect for fast devices and Raman amplifiers

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Linear and Nonlinear Nanophotonic Devices Based on Silicon-on-Insulator Wire Waveguides

Cited by 72 publications

References 68 publications

Silicon-on-Insulator (SOI) Ring Resonator-Based Integrated Optical Hydrogen Sensor

Silicon-on-Insulator (SOI) Ring Resonator-Based Integrated Optical Hydrogen Sensor

Self-pulsing and chaos in short chains of coupled nonlinear microcavities

Compound FDTD method for silicon photonics

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